Datasheet IRFP360, IRFP362 (New Jersey Semiconductor) - 2
| 制造商 | New Jersey Semiconductor |
| 描述 | Avalanche-Energy-Rated N-Channel Power MOSFETs |
| 页数 / 页 | 2 / 2 — IRFP360, IRFP362. ELECTRICAL CHARACTERISTICS At Case Temperature (Tj) = … |
| 文件格式/大小 | PDF / 650 Kb |
| 文件语言 | 英语 |
IRFP360, IRFP362. ELECTRICAL CHARACTERISTICS At Case Temperature (Tj) = 25° C Unless Otherwise Specified
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IRFP360, IRFP362
ELECTRICAL CHARACTERISTICS At Case Temperature (Tj) = 25° C Unless Otherwise Specified
Parameter Type Mm BVDSS Drain-to-Source Breakdown Voltage IRFP380
IHFP362 400 -V VQS -0V. ID -2SOMA RDS(on) Static Drain-to-Source
On-State Resistance CD IRFP360 — 0.18 020 Q VQS . iov. ID -ISA IRFP362 -0.20 0.25 'D(on) On-Stale Dram Current @ IRFP3SO 23 -A VDS> IRFP362 20 Typ. Max Units Tesi Conditions !D(on) VGS -10V VDS VGS-vGS(th) O*« Threshold Voltage ALL 2.0 -4.0 V 9(5 Forward Transconductance (3) ALL 14 21 -S(D) -250 -1000 M* VDS * ° 8 « ALL -500 nA VGS -20V 'OSS Zef° Gat* VottAfl* Drain Current
ALL 'CSS Gate-to-Source Leakage Forward -x RDS
ELECTRICAL CHARACTERISTICS At Case Temperature (Tj) = 25° C Unless Otherwise Specified
Parameter Type Mm BVDSS Drain-to-Source Breakdown Voltage IRFP380
IHFP362 400 -V VQS -0V. ID -2SOMA RDS(on) Static Drain-to-Source
On-State Resistance CD IRFP360 — 0.18 020 Q VQS . iov. ID -ISA IRFP362 -0.20 0.25 'D(on) On-Stale Dram Current @ IRFP3SO 23 -A VDS> IRFP362 20 Typ. Max Units Tesi Conditions !D(on) VGS -10V VDS VGS-vGS(th) O*« Threshold Voltage ALL 2.0 -4.0 V 9(5 Forward Transconductance (3) ALL 14 21 -S(D) -250 -1000 M* VDS * ° 8 « ALL -500 nA VGS -20V 'OSS Zef° Gat* VottAfl* Drain Current
ALL 'CSS Gate-to-Source Leakage Forward -x RDS