Datasheet LTC4367 (Analog Devices) - 7
| 制造商 | Analog Devices |
| 描述 | 100V Overvoltage, Undervoltage and Reverse Supply Protection Controller |
| 页数 / 页 | 22 / 7 — PIN FUNCTIONS Exposed Pad:. SHDN:. FAULT:. GATE:. UV:. GND:. OV:. VIN:. … |
| 文件格式/大小 | PDF / 880 Kb |
| 文件语言 | 英语 |
PIN FUNCTIONS Exposed Pad:. SHDN:. FAULT:. GATE:. UV:. GND:. OV:. VIN:. VOUT:
该数据表的模型线
- LTC4367CDD#PBF LTC4367CDD#TRPBF LTC4367CDD-1#PBF LTC4367CDD-1#TRPBF LTC4367CMS8#PBF LTC4367CMS8#TRPBF LTC4367CMS8-1#PBF LTC4367CMS8-1#TRPBF LTC4367HDD#PBF LTC4367HDD#TRPBF LTC4367HDD-1#PBF LTC4367HDD-1#TRPBF LTC4367HMS8#PBF LTC4367HMS8#TRPBF LTC4367HMS8-1#PBF LTC4367HMS8-1#TRPBF LTC4367IDD#PBF LTC4367IDD#TRPBF LTC4367IDD-1#PBF LTC4367IDD-1#TRPBF LTC4367IMS8#PBF LTC4367IMS8#TRPBF LTC4367IMS8-1#PBF LTC4367IMS8-1#TRPBF
文件文字版本
LTC4367
PIN FUNCTIONS Exposed Pad:
The exposed pad may be left open or con-
SHDN:
Shutdown Control Input. SHDN high enables the nected to device ground. GATE charge pump which in turn enhances the gate of an
FAULT:
Fault Indication Output. This high voltage open drain external N-channel MOSFET. A low on SHDN generates a output is pulled low if UV is below its monitor threshold, pull down on the GATE output with a 90µA current sink if OV is above its monitor threshold, if SHDN is low, or if and places the LTC4367 in low current mode (5µA). If V unused, connect to VIN with a 510k resistor. If VIN goes IN has not risen above VIN(UVLO). above 80V, the SHDN pin voltage must be kept below 80V
GATE:
Gate Drive Output for External N-channel MOSFETs. (see Applications Information). An internal charge pump provides 35µA of pull-up current and up to 13.1V of enhancement to the gate of an external
UV:
Undervoltage Comparator Input. Connect this pin to an N-channel MOSFET. When turned off, GATE is pulled just external resistive divider to set the desired VIN undervolt- below the lower of V age fault threshold. This input connects to an accurate, IN or VOUT. When VIN goes negative, GATE is automatically connected to V fast (1µs) comparator with a 0.5V falling threshold and IN. 25mV of hysteresis. When UV falls below its threshold, a
GND:
Device Ground. 60mA current sink pulls down on the GATE output. When
OV:
Overvoltage Comparator Input. Connect this pin to an UV rises back above 0.525V, and after a 32ms GATE turn- external resistive divider to set the desired V on delay waiting period (500µs for LTC4367-1), the GATE IN overvoltage fault threshold. This input connects to an accurate, fast charge pump is enabled. The low leakage current of the (1µs) comparator with a 0.5V rising threshold and 25mV UV input allows the use of large valued resistors for the of hysteresis. When OV rises above its threshold, a 60mA external resistive divider. If unused and VIN is less than current sink pulls down on the GATE output. When OV falls 80V, connect to VIN with a 510k resistor. back below 0.475V, and after a 32ms GATE turn-on delay
VIN:
Power Supply Input. Maximum protection range: waiting period (500µs for LTC4367-1), the GATE charge –40V to 100V. Operating range: 2.5V to 60V. pump is enabled. The low leakage current of the OV input allows the use of large valued resistors for the external
VOUT:
Output Voltage Sense Input. This pin senses the volt- resistive divider. Connect to GND if unused. If the voltage age at the output side of the external N-channel MOSFET. at the OV pin can rise above 5V, place a low leakage Zener The GATE charge pump voltage is referenced to VOUT. It clamp on the OV pin. is used as the charge pump input when VOUT is greater than approximately 5V. 4367fb For more information www.linear.com/LTC4367 7
PIN FUNCTIONS Exposed Pad:
The exposed pad may be left open or con-
SHDN:
Shutdown Control Input. SHDN high enables the nected to device ground. GATE charge pump which in turn enhances the gate of an
FAULT:
Fault Indication Output. This high voltage open drain external N-channel MOSFET. A low on SHDN generates a output is pulled low if UV is below its monitor threshold, pull down on the GATE output with a 90µA current sink if OV is above its monitor threshold, if SHDN is low, or if and places the LTC4367 in low current mode (5µA). If V unused, connect to VIN with a 510k resistor. If VIN goes IN has not risen above VIN(UVLO). above 80V, the SHDN pin voltage must be kept below 80V
GATE:
Gate Drive Output for External N-channel MOSFETs. (see Applications Information). An internal charge pump provides 35µA of pull-up current and up to 13.1V of enhancement to the gate of an external
UV:
Undervoltage Comparator Input. Connect this pin to an N-channel MOSFET. When turned off, GATE is pulled just external resistive divider to set the desired VIN undervolt- below the lower of V age fault threshold. This input connects to an accurate, IN or VOUT. When VIN goes negative, GATE is automatically connected to V fast (1µs) comparator with a 0.5V falling threshold and IN. 25mV of hysteresis. When UV falls below its threshold, a
GND:
Device Ground. 60mA current sink pulls down on the GATE output. When
OV:
Overvoltage Comparator Input. Connect this pin to an UV rises back above 0.525V, and after a 32ms GATE turn- external resistive divider to set the desired V on delay waiting period (500µs for LTC4367-1), the GATE IN overvoltage fault threshold. This input connects to an accurate, fast charge pump is enabled. The low leakage current of the (1µs) comparator with a 0.5V rising threshold and 25mV UV input allows the use of large valued resistors for the of hysteresis. When OV rises above its threshold, a 60mA external resistive divider. If unused and VIN is less than current sink pulls down on the GATE output. When OV falls 80V, connect to VIN with a 510k resistor. back below 0.475V, and after a 32ms GATE turn-on delay
VIN:
Power Supply Input. Maximum protection range: waiting period (500µs for LTC4367-1), the GATE charge –40V to 100V. Operating range: 2.5V to 60V. pump is enabled. The low leakage current of the OV input allows the use of large valued resistors for the external
VOUT:
Output Voltage Sense Input. This pin senses the volt- resistive divider. Connect to GND if unused. If the voltage age at the output side of the external N-channel MOSFET. at the OV pin can rise above 5V, place a low leakage Zener The GATE charge pump voltage is referenced to VOUT. It clamp on the OV pin. is used as the charge pump input when VOUT is greater than approximately 5V. 4367fb For more information www.linear.com/LTC4367 7