Datasheet LTC4001-1 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | 2A Synchronous Buck Li-Ion Charger |
| 页数 / 页 | 20 / 3 — ELECTRICAL CHARACTERISTICS. The. denotes the specifi cations which apply … |
| 文件格式/大小 | PDF / 236 Kb |
| 文件语言 | 英语 |
ELECTRICAL CHARACTERISTICS. The. denotes the specifi cations which apply over the full operating
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LTC4001-1
ELECTRICAL CHARACTERISTICS The
l
denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C. VIN = 5V, VEN = 0V, RPROG = 549Ω, RIDET = 549Ω, unless otherwise specifi ed. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
fOSC Oscillator Frequency 1.3 1.5 1.7 MHz D Maximum Duty Factor 100 % RPFET RDS(ON) of P-Channel MOSFET Measured from PVIN to SW 127 mΩ RNFET RDS(ON) of N-Channel MOSFET Measured from SW to PGND 121 mΩ tTIMER Timer Accuracy CTIMER = 0.22μF ±10 % VEN Enable Input Threshold Voltage VEN Rising 0.6 0.8 1 V ΔVEN Enable Input Hysteresis 100 mV VPROG PROG Pin Voltage RPROG = 549Ω 1.213 V VIDET IDET Pin Voltage RIDET = 549Ω 1.213 V IIDET IDET Threshold RIDET = 549Ω 150 200 250 mA ICHRG CHRG Pin Weak Pull-Down VCHRG = 1V 15 30 50 μA Current VCHRG CHRG Pin Output Low Voltage ICHRG = 5mA 0.2 0.4 V VOL FAULT Pin Output Low Voltage 1mA Load 0.4 V VOH FAULT Pin Output High Voltage 1mA Load 4.6 V VRECHRG Recharge Battery Threshold VFLOAT – VRECHRG VBAT Falling 50 100 135 mV Voltage tRB Recharge Filter Time Constant 4 ms tRECHRG Recharge Time Percent of Total Charge Time 50 % tTRIKL Low-Battery Trickle Charge Time Percent of Total Charge Time, VBAT < 2.8V, 25 % Measured Using BATSENS and GNDSENS Pins ISS Soft-Start Ramp Current VBAT < VFLOAT – 100mV, VBAT Across BATSENS 6 12.8 16 μA and GNDSENS Pins VCOLD NTC Pin Cold Temperature Fault From NTC to GNDSENS Pin Threshold Rising Threshold 0.74 VINSENSE V Falling Threshold 0.72 VINSENSE V VHOT NTC Pin Hot Temperature Fault From NTC to GNDSENS Pin Threshold Falling Threshold 0.29 VINSENSE V Rising Threshold 0.30 VINSENSE V VDIS NTC Disable Threshold (Falling) From NTC to GNDSENS Pin 0.015 • 0.02 • 0.025 • V VINSENSE VINSENSE VINSENSE ΔVDIS NTC Disable Hysteresis From NTC to GNDSENS Pin 0.01 • V VINSENSE
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 4:
TJ is calculated from the ambient temperature TA and power dis- may cause permanent damage to the device. Exposure to any Absolute sipation PD according to the following formula: Maximum Rating condition for extended periods may affect device TJ = TA + (PD • 37°C/W) reliability and lifetime.
Note 5:
This IC includes overtemperature protection that is intended to
Note 2:
Operation with current limited wall adapters is allowed down to the protect the device during momentary overload. Junction temperature will undervoltage lockout threshold. exceed 125°C when overtemperature protection is active. Continuous
Note 3:
The LTC4001E-1 is guaranteed to meet performance specifi ca- operation above the specifi ed maximum operating junction temperature tions from 0°C to 85°C. Specifi cations over the – 40°C to 85°C operating my impair device reliability. temperature range are assured by design, characterization and correlation with statistical process controls. 40011fa 3
ELECTRICAL CHARACTERISTICS The
l
denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C. VIN = 5V, VEN = 0V, RPROG = 549Ω, RIDET = 549Ω, unless otherwise specifi ed. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
fOSC Oscillator Frequency 1.3 1.5 1.7 MHz D Maximum Duty Factor 100 % RPFET RDS(ON) of P-Channel MOSFET Measured from PVIN to SW 127 mΩ RNFET RDS(ON) of N-Channel MOSFET Measured from SW to PGND 121 mΩ tTIMER Timer Accuracy CTIMER = 0.22μF ±10 % VEN Enable Input Threshold Voltage VEN Rising 0.6 0.8 1 V ΔVEN Enable Input Hysteresis 100 mV VPROG PROG Pin Voltage RPROG = 549Ω 1.213 V VIDET IDET Pin Voltage RIDET = 549Ω 1.213 V IIDET IDET Threshold RIDET = 549Ω 150 200 250 mA ICHRG CHRG Pin Weak Pull-Down VCHRG = 1V 15 30 50 μA Current VCHRG CHRG Pin Output Low Voltage ICHRG = 5mA 0.2 0.4 V VOL FAULT Pin Output Low Voltage 1mA Load 0.4 V VOH FAULT Pin Output High Voltage 1mA Load 4.6 V VRECHRG Recharge Battery Threshold VFLOAT – VRECHRG VBAT Falling 50 100 135 mV Voltage tRB Recharge Filter Time Constant 4 ms tRECHRG Recharge Time Percent of Total Charge Time 50 % tTRIKL Low-Battery Trickle Charge Time Percent of Total Charge Time, VBAT < 2.8V, 25 % Measured Using BATSENS and GNDSENS Pins ISS Soft-Start Ramp Current VBAT < VFLOAT – 100mV, VBAT Across BATSENS 6 12.8 16 μA and GNDSENS Pins VCOLD NTC Pin Cold Temperature Fault From NTC to GNDSENS Pin Threshold Rising Threshold 0.74 VINSENSE V Falling Threshold 0.72 VINSENSE V VHOT NTC Pin Hot Temperature Fault From NTC to GNDSENS Pin Threshold Falling Threshold 0.29 VINSENSE V Rising Threshold 0.30 VINSENSE V VDIS NTC Disable Threshold (Falling) From NTC to GNDSENS Pin 0.015 • 0.02 • 0.025 • V VINSENSE VINSENSE VINSENSE ΔVDIS NTC Disable Hysteresis From NTC to GNDSENS Pin 0.01 • V VINSENSE
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 4:
TJ is calculated from the ambient temperature TA and power dis- may cause permanent damage to the device. Exposure to any Absolute sipation PD according to the following formula: Maximum Rating condition for extended periods may affect device TJ = TA + (PD • 37°C/W) reliability and lifetime.
Note 5:
This IC includes overtemperature protection that is intended to
Note 2:
Operation with current limited wall adapters is allowed down to the protect the device during momentary overload. Junction temperature will undervoltage lockout threshold. exceed 125°C when overtemperature protection is active. Continuous
Note 3:
The LTC4001E-1 is guaranteed to meet performance specifi ca- operation above the specifi ed maximum operating junction temperature tions from 0°C to 85°C. Specifi cations over the – 40°C to 85°C operating my impair device reliability. temperature range are assured by design, characterization and correlation with statistical process controls. 40011fa 3