Datasheet LTC4010 (Analog Devices) - 4

LTC4010 e lecTrical characTerisTics
The
l
indicates specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VCC = 12V, BAT = 4.8V, GND = PGND = 0V, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Charger Timing
∆tTIMER Internal Time Base Error l –10 10 % ∆tMAX Programmable Timer Error RTIMER = 49.9k l –20 20 %
Status and Chemistry Select
VOL Output Voltage Low (ILOAD = 10mA) VCDIV l 435 700 mV All Other Status Outputs l 300 600 mV ILKG Output Leakage Current All Status Outputs Inactive, VOUT = VCC l –10 10 µA IIH(VCDIV) Input Current High VCDIV = VBAT (Shutdown) l –1 1 µA VIL Input Voltage Low CHEM (NiMH) l 900 mV VIH Input Voltage High CHEM (NiCd) l 2.85 V IIL Input Current Low CHEM = GND l –20 –5 µA IIH Input Current High CHEM = 3.3V l –20 20 µA
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings when overtemperature protection is active. Continuous operation above may cause permanent damage to the device. Exposure to any Absolute the specified maximum operating junction temperature may result in Maximum Rating condition for extended periods may affect device device degradation or failure. reliability and lifetime.
Note 4:
All current into device pins are positive. All current out of device
Note 2:
The LTC4010E is guaranteed to meet performance specifications pins are negative. All voltages are referenced to GND, unless otherwise from 0°C to 70°C. Specifications over the 0°C to 85°C operating specified. temperature range are assured by design, characterization and correlation
Note 5:
Output current may be limited by internal power dissipation. Refer with statistical process controls. to the Applications Information section for details.
Note 3:
Operating junction temperature TJ (in °C) is calculated from
Note 6:
Either TGATE VOH may apply for 7.5V < VCC < 9V. the ambient temperature TA and the total continuous package power
Note 7:
These limits apply specifically to the thermistor network shown in dissipation PD (in watts) by the formula: Figure 5 in the Applications Information section with a b of 3750 and are TJ = TA + qJA • PD guaranteed by specific VTEMP voltage measurements during test. Refer to the Applications Information section for details. This IC includes
Note 8:
These limits are guaranteed by correlation to wafer level overtemperature protection that is intended to protect the device during measurements. momentary overload conditions. Junction temperature will exceed 125°C Typical perForMance characTerisTics
NiCd Charge Cycle at 1C NiCd Charge Cycle at 2C
1.65 36 1.75 55 4 SERIES NiCd 1300mAhr 1.60 34 1.70 SC CELLS CHARGED AT 2C 50 BA BA TTER SINGLE CELL T 1.65 45 TER 1.55 32 VOLTAGE SINGLE CELL Y TEMPERA Y TEMPERA TAGE (V) VOLTAGE TAGE (V) 1.60 40 1.50 30 1.55 BATTERY 35 1.45 28 TURE (°C) TEMPERATURE TURE (°C) BATTERY 1.50 3A 30 TEMPERATURE 1.40 26 SINGLE CELL VOL SINGLE CELL VOL 1.45 2A 25 CHARGE CURRENT 1.35 1A 24 1.40 1A 20 CHARGE CURRENT 1.30 22 1.35 15 0 20 40 60 80 0 10 20 30 40 TIME (MINUTES) TIME (MINUTES) 4010 G01 4010 G02 4010fb Document Outline Features Applications Description Typical Application Absolute Maximum Ratings Pin Configuration Order Information Electrical Characteristics Typical Performance Characteristics Pin Functions Block Diagram Operation Applications Information Package Description Revision History Related Parts