Datasheet LTC4011 (Analog Devices) - 4

LTC4011 e lecTrical characTerisTics
The
l
indicates specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VCC = 12V, BAT = 4.8V, GND = PGND = 0V, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
TMAXC Maximum Fast Charge Temperature VTEMP Decreasing, Fast Charge l 57 60 63 °C (Note 8) VTEMP(D) VTEMP Disable Threshold Voltage l 2.8 3.3 V VTEMP(P) Pause Threshold Voltage l 130 280 mV
Charger Timing
∆tTIMER Internal Time Base Error l –10 10 % ∆tMAX Programmable Timer Error RTIMER = 49.9k l –20 20 %
PowerPath Control
VFR INFET Forward Regulation Voltage DCIN – VCC l 15 55 100 mV VOL(INFET) Output Voltage Low VCC – INFET, No Load l 3.75 5.2 7 V VOH(INFET) Output Voltage High VCC – INFET, No Load l 0 50 mV tOFF(INFET) INFET OFF Delay Time CLOAD = 10nF, INFET to 50% 3 15 µs
Status and Chemistry Select
VOL Output Voltage Low (ILOAD = 10mA) VCDIV l 435 700 mV All Other Status Outputs l 300 600 mV ILKG Output Leakage Current All Status Outputs Inactive, VOUT = VCC l –10 10 µA IIH(VCDIV) Input Current High VCDIV = VBAT (Shutdown) l –1 1 µA VIL Input Voltage Low CHEM (NiMH) l 900 mV VIH Input Voltage High CHEM (NiCd) l 2.85 V IIL Input Current Low CHEM = GND l –20 –5 µA IIH Input Current High CHEM = 3.3V l –20 20 µA
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings when overtemperature protection is active. Continuous operation above may cause permanent damage to the device. Exposure to any Absolute the specified maximum operating junction temperature may result in Maximum Rating condition for extended periods may affect device device degradation or failure. reliability and lifetime.
Note 4:
All current into device pins is positive. All current out of device
Note 2:
The LTC4011C is guaranteed to meet performance specifications pins is negative. All voltages are referenced to GND, unless otherwise from 0°C to 70°C. Specifications over the 0°C to 85°C operating specified. temperature range are assured by design, characterization and correlation
Note 5:
These limits are guaranteed by correlation to wafer level with statistical process controls. measurements.
Note 3:
Operating junction temperature TJ (in °C) is calculated from
Note 6:
Output current may be limited by internal power dissipation. Refer the ambient temperature TA and the total continuous package power to the Applications Information section for details. dissipation PD (in watts) by the formula:
Note 7:
Either TGATE VOH may apply for 7.5V < VCC < 9V. TJ = TA + θJA • PD
Note 8:
These limits apply specifically to the thermistor network shown in Refer to the Applications Information section for details. This IC includes Figure 5 in the Applications Information section with the values specified overtemperature protection that is intended to protect the device during for a 10k NTC (β of 3750). Limits are then guaranteed by specific VTEMP momentary overload conditions. Junction temperature will exceed 125°C voltage measurements during test. 4011fb Document Outline Features Applications Description Typical Application Absolute Maximum Ratings Pin Configuration Order Information Electrical Characteristics Typical Performance Characteristics Pin Functions Block Diagram Operation Applications Information Package Description Revision History Related Parts