Datasheet ADR512 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | 1.2 V Precision Low Noise Shunt Voltage Reference |
| 页数 / 页 | 12 / 3 — Data Sheet. ADR512. SPECIFICATIONS ELECTRICAL CHARACTERISTICS. Table 2. … |
| 修订版 | A |
| 文件格式/大小 | PDF / 282 Kb |
| 文件语言 | 英语 |
Data Sheet. ADR512. SPECIFICATIONS ELECTRICAL CHARACTERISTICS. Table 2. Parameter. Symbol. Test Conditions / Comments. Min. Typ. Max
该数据表的模型线
文件文字版本
link to page 4 link to page 4
Data Sheet ADR512 SPECIFICATIONS ELECTRICAL CHARACTERISTICS
IIN = 100 µA to 10 mA @ TA = 25°C, unless otherwise noted.
Table 2. Parameter Symbol Test Conditions / Comments Min Typ Max Unit
Output Voltage1 VO 1.1965 1.2 1.2035 V Initial Accuracy VOERR −3.5 +3.5 mV TOERR% −0.3 +0.3 % Temperature Coefficient A Grade TCVO −40°C < TA < +85°C 60 ppm/°C Output Voltage Change vs. IIN ΔVR IIN = 0.1 mA to 10 mA 3 mV Dynamic Output Impedence (ΔVR/ΔIR) IIN = 1 mA ± 100 µA 0.3 Ω Minimum Operating Current IIN −40°C < TA < +85°C 100 µA Voltage Noise eN p-p f = 0.1 Hz to 10 Hz 4 µV p-p Turn-On Settling Time2 tR To within 0.1% of Output 10 µs Output Voltage Hysteresis VO_HYS 50 ppm 1 The forward diode voltage characteristic at −1 mA is typically 0.65 V. 2 Measured without a load capacitor. Rev. A | Page 3 of 12 Document Outline Features Applications Pin Configuration General Description Revision History Specifications Electrical Characteristics Absolute Maximum Ratings Thermal Resistance ESD Caution Typical Performance Characteristics Parameter Definitions Temperature Coefficient Thermal Hysteresis Applications Section Adjustable Precision Voltage Source Output Voltage Trim Using the ADR512 with Precision Data Converters Precise Negative Voltage Reference Outline Dimensions Ordering Guide
Data Sheet ADR512 SPECIFICATIONS ELECTRICAL CHARACTERISTICS
IIN = 100 µA to 10 mA @ TA = 25°C, unless otherwise noted.
Table 2. Parameter Symbol Test Conditions / Comments Min Typ Max Unit
Output Voltage1 VO 1.1965 1.2 1.2035 V Initial Accuracy VOERR −3.5 +3.5 mV TOERR% −0.3 +0.3 % Temperature Coefficient A Grade TCVO −40°C < TA < +85°C 60 ppm/°C Output Voltage Change vs. IIN ΔVR IIN = 0.1 mA to 10 mA 3 mV Dynamic Output Impedence (ΔVR/ΔIR) IIN = 1 mA ± 100 µA 0.3 Ω Minimum Operating Current IIN −40°C < TA < +85°C 100 µA Voltage Noise eN p-p f = 0.1 Hz to 10 Hz 4 µV p-p Turn-On Settling Time2 tR To within 0.1% of Output 10 µs Output Voltage Hysteresis VO_HYS 50 ppm 1 The forward diode voltage characteristic at −1 mA is typically 0.65 V. 2 Measured without a load capacitor. Rev. A | Page 3 of 12 Document Outline Features Applications Pin Configuration General Description Revision History Specifications Electrical Characteristics Absolute Maximum Ratings Thermal Resistance ESD Caution Typical Performance Characteristics Parameter Definitions Temperature Coefficient Thermal Hysteresis Applications Section Adjustable Precision Voltage Source Output Voltage Trim Using the ADR512 with Precision Data Converters Precise Negative Voltage Reference Outline Dimensions Ordering Guide