Datasheet ADR510 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | 1.0 V Precision Low Noise Shunt Voltage Reference |
| 页数 / 页 | 12 / 3 — ADR510. SPECIFICATIONS ELECTRICAL CHARACTERISTICS. Table 2. Parameter. … |
| 修订版 | B |
| 文件格式/大小 | PDF / 394 Kb |
| 文件语言 | 英语 |
ADR510. SPECIFICATIONS ELECTRICAL CHARACTERISTICS. Table 2. Parameter. Symbol. Conditions. Min. Typ. Max. Unit
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ADR510 SPECIFICATIONS ELECTRICAL CHARACTERISTICS
IIN = 100 μA to 10 mA @ TA = 25°C, unless otherwise noted.
Table 2. Parameter Symbol Conditions Min Typ Max Unit
Output Voltage1 VOUT 0.9965 1.0 1.0035 V Initial Accuracy VOUTERR −3.5 +3.5 mV VOUTERR% −0.35 +0.35 % Temperature Coefficient, A Grade TCVOUT 0°C < TA < 70°C 70 ppm/°C −40°C < TA < +85°C 85 ppm/°C Output Voltage Change vs. IIN ∆VR IIN = 0.1 mA to 10 mA 3 mV Dynamic Output Impedance (∆VR/∆IR) IIN = 1 mA ± 100 μA 0.3 Ω Minimum Operating Current IIN 0°C < TA < 70°C 100 μA Voltage Noise eN p-p f = 0.1 Hz to 10 Hz 4 μV p-p Turn-On Settling Time2 tR To within 0.1% of output 10 μs Output Voltage Hysteresis VOUT_HYS 50 ppm 1 The forward diode voltage characteristic at −1 mA is typically 0.65 V. 2 Measured without a load capacitor. Rev. B | Page 3 of 12 Document Outline FEATURES APPLICATIONS PIN CONFIGURATION GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS PARAMETER DEFINITIONS TEMPERATURE COEFFICIENT THERMAL HYSTERESIS APPLICATIONS INFORMATION ADJUSTABLE PRECISION VOLTAGE SOURCE OUTPUT VOLTAGE TRIM USING THE ADR510 WITH PRECISION DATA CONVERTERS PRECISE NEGATIVE VOLTAGE REFERENCE OUTLINE DIMENSIONS ORDERING GUIDE
ADR510 SPECIFICATIONS ELECTRICAL CHARACTERISTICS
IIN = 100 μA to 10 mA @ TA = 25°C, unless otherwise noted.
Table 2. Parameter Symbol Conditions Min Typ Max Unit
Output Voltage1 VOUT 0.9965 1.0 1.0035 V Initial Accuracy VOUTERR −3.5 +3.5 mV VOUTERR% −0.35 +0.35 % Temperature Coefficient, A Grade TCVOUT 0°C < TA < 70°C 70 ppm/°C −40°C < TA < +85°C 85 ppm/°C Output Voltage Change vs. IIN ∆VR IIN = 0.1 mA to 10 mA 3 mV Dynamic Output Impedance (∆VR/∆IR) IIN = 1 mA ± 100 μA 0.3 Ω Minimum Operating Current IIN 0°C < TA < 70°C 100 μA Voltage Noise eN p-p f = 0.1 Hz to 10 Hz 4 μV p-p Turn-On Settling Time2 tR To within 0.1% of output 10 μs Output Voltage Hysteresis VOUT_HYS 50 ppm 1 The forward diode voltage characteristic at −1 mA is typically 0.65 V. 2 Measured without a load capacitor. Rev. B | Page 3 of 12 Document Outline FEATURES APPLICATIONS PIN CONFIGURATION GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS PARAMETER DEFINITIONS TEMPERATURE COEFFICIENT THERMAL HYSTERESIS APPLICATIONS INFORMATION ADJUSTABLE PRECISION VOLTAGE SOURCE OUTPUT VOLTAGE TRIM USING THE ADR510 WITH PRECISION DATA CONVERTERS PRECISE NEGATIVE VOLTAGE REFERENCE OUTLINE DIMENSIONS ORDERING GUIDE