Datasheet LT1389 (Analog Devices) - 3

制造商Analog Devices
描述Nanopower Precision Shunt Voltage Reference
页数 / 页12 / 3 — 2.5V ELECTRICAL CHARACTERISTICS The. denotes specifications which apply …
文件格式/大小PDF / 219 Kb
文件语言英语

2.5V ELECTRICAL CHARACTERISTICS The. denotes specifications which apply over the full operating

2.5V ELECTRICAL CHARACTERISTICS The denotes specifications which apply over the full operating

该数据表的模型线

文件文字版本

LT1389
2.5V ELECTRICAL CHARACTERISTICS The

denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. (Note 3) PARAMETER CONDITIONS MIN TYP MAX UNITS
Reverse Breakdown Voltage LT1389BCS8 (IR = 0.9µA) 2.49875 2.500 2.50125 V – 0.05 0.05 % LT1389BCS8 (IR = 0.9µA) ● 2.49525 2.500 2.50475 V – 0.19 0.19 % Reverse Breakdown Change 0.9µA ≤ IR ≤ 200µA 0.2 0.5 mV with Current (Note 4) ● 0.2 1.5 mV 200µA ≤ IR ≤ 2mA 0.3 1.0 mV ● 0.3 2.5 mV Minimum Operating Current ● 0.7 µA Temperature Coefficient IR = 0.9µA ● 8 20 ppm/°C Reverse Dynamic Impedance (Note 5) 0.9µA ≤ IR ≤ 2mA 0.25 0.75 Ω ● 0.25 2 Ω Low Frequency Noise (Note 6) IR = 0.9µA, 0.1Hz ≤ f ≤ 10Hz 50 µVP-P
4.096V ELECTRICAL CHARACTERISTICS The

denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. (Note 3) PARAMETER CONDITIONS MIN TYP MAX UNITS
Reverse Breakdown Voltage LT1389BCS8 (IR = 1.5µA) 4.09293 4.096 4.09907 V – 0.075 0.075 % LT1389BCS8 (IR = 1.5µA) ● 4.0788 4.096 4.1132 V – 0.42 0.42 % Reverse Breakdown Change 1.5µA ≤ IR ≤ 200µA 0.2 1.5 mV with Current (Note 4) ● 0.2 3 mV 200µA ≤ IR ≤ 2mA 0.3 4 mV ● 0.3 6 mV Minimum Operating Current ● 1 µA Temperature Coefficient IR = 1.5µA ● 12 50 ppm/°C Reverse Dynamic Impedance (Note 5) 1.5µA ≤ IR ≤ 2mA 0.75 2 Ω ● 0.75 3 Ω Low Frequency Noise (Note 6) IR = 1.5µA, 0.1Hz ≤ f ≤ 10Hz 80 µVP-P 3