Datasheet RH1056A (Analog Devices) - 2
| 制造商 | Analog Devices |
| 描述 | Precision, High Speed, JFET Input Operational Amplifier |
| 页数 / 页 | 4 / 2 — TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) (Note 3). TA = 25°C. … |
| 修订版 | D |
| 文件格式/大小 | PDF / 190 Kb |
| 文件语言 | 英语 |
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) (Note 3). TA = 25°C. SUB-. –55°C ≤ TA ≤ 125°C. SYMBOL PARAMETER. CONDITIONS
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RH1056A
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) (Note 3) TA = 25°C SUB- –55°C ≤ TA ≤ 125°C SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS
VOS Input Offset Voltage RH1056AMW 2 300 4 900 2, 3 µV RH1056AMH 300 4 1100 2, 3 µV IOS Input Offset Current Fully Warmed Up 4 10 1 pA TA = 125°C 4 1.5 2 nA IB Input Bias Current Fully Warmed Up 4 50 1 pA TA = 125°C 3.0 2 nA RIN Input Resistance 1012 Ω AVOL Large-Signal Voltage VS = ±15V, VO = ±10V, RL = 2k 150 4 40 5,6 V/mV Gain VS = ±15V, VO = ±10V, RL = 1k 130 4 V/mV VO Output Voltage Swing VS = ±15V, RL = 2k ±12 4 ±12 5,6 V VCM Input Common Mode VS = ±15V ±11 1 ±11 2,3 V Voltage Range CMRR Common Mode VCM = ±11V 86 1 dB Rejection Ratio VCM = ±10.5V 85 2,3 dB PSRR Power Supply Rejection VS = ±10V to ±18V 90 1 dB Ratio VS = ±10V to ±17V 88 2,3 dB IS Supply Current VS = ±15V 6.5 1 mA SR Slew Rate AV = 1, VS = ±15V 10 7 V/µs GBW Gain-Bandwidth Product VS = ±15V 6.5 MHz en Input Noise Voltage VS = ±15V, f = 10Hz 28 nV/√Hz Density VS = ±15V, f = 1kHz 14 nV/√Hz in Input Noise Current VS = ±15V, f = 10Hz 1.8 fA/√Hz Density VS = ±15V, f = 1kHz 1.8 fA/√Hz CIN Input Capacitance 4 4 pF
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 5) 10KRAD (Si) 20KRAD (Si) 50KRAD (Si) 100KRAD (Si) 200KRAD (Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Input Offset Voltage 2 300 300 370 570 870 µV IOS Input Offset Current 4 ±10 ±50 ±150 ±250 ±350 pA IB Input Bias Current 4 ±50 ±250 ±500 ±1000 ±2000 pA AVOL Large-Signal VO = ±10V, RL ≥ 2k 150 150 150 100 75 V/mV Voltage Gain VO = ±10V, RL ≥ 1k 130 130 130 87 65 V/mV VO Output Voltage Swing RL ≥ 2k ±12 ±12 ±12 ±12 ±12 V VCM Input Common Mode VS = ±15V ±11 ±11 ±11 ±11 ±11 V Voltage Range CMRR Common Mode VCM = ±11V 86 86 86 86 86 dB Rejection Ratio PSRR Power Supply VS = ±10V to ±18V 90 90 90 90 90 dB Rejection Ratio IS Supply Current 7 7 7 7 7 mA SR Slew Rate AV = 1, VS = ±15V 10 10 9 9 9 V/µs CIN Input Capacitance 3(Typ) 3(Typ) 3(Typ) 3(Typ) 3(Typ) pF Rev D 2 For more information www.analog.com Document Outline Package Information Burn-In Circuit Table 2: Electrical Test Requirements Total Dose Bias Circuit Revision History
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) (Note 3) TA = 25°C SUB- –55°C ≤ TA ≤ 125°C SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS
VOS Input Offset Voltage RH1056AMW 2 300 4 900 2, 3 µV RH1056AMH 300 4 1100 2, 3 µV IOS Input Offset Current Fully Warmed Up 4 10 1 pA TA = 125°C 4 1.5 2 nA IB Input Bias Current Fully Warmed Up 4 50 1 pA TA = 125°C 3.0 2 nA RIN Input Resistance 1012 Ω AVOL Large-Signal Voltage VS = ±15V, VO = ±10V, RL = 2k 150 4 40 5,6 V/mV Gain VS = ±15V, VO = ±10V, RL = 1k 130 4 V/mV VO Output Voltage Swing VS = ±15V, RL = 2k ±12 4 ±12 5,6 V VCM Input Common Mode VS = ±15V ±11 1 ±11 2,3 V Voltage Range CMRR Common Mode VCM = ±11V 86 1 dB Rejection Ratio VCM = ±10.5V 85 2,3 dB PSRR Power Supply Rejection VS = ±10V to ±18V 90 1 dB Ratio VS = ±10V to ±17V 88 2,3 dB IS Supply Current VS = ±15V 6.5 1 mA SR Slew Rate AV = 1, VS = ±15V 10 7 V/µs GBW Gain-Bandwidth Product VS = ±15V 6.5 MHz en Input Noise Voltage VS = ±15V, f = 10Hz 28 nV/√Hz Density VS = ±15V, f = 1kHz 14 nV/√Hz in Input Noise Current VS = ±15V, f = 10Hz 1.8 fA/√Hz Density VS = ±15V, f = 1kHz 1.8 fA/√Hz CIN Input Capacitance 4 4 pF
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 5) 10KRAD (Si) 20KRAD (Si) 50KRAD (Si) 100KRAD (Si) 200KRAD (Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Input Offset Voltage 2 300 300 370 570 870 µV IOS Input Offset Current 4 ±10 ±50 ±150 ±250 ±350 pA IB Input Bias Current 4 ±50 ±250 ±500 ±1000 ±2000 pA AVOL Large-Signal VO = ±10V, RL ≥ 2k 150 150 150 100 75 V/mV Voltage Gain VO = ±10V, RL ≥ 1k 130 130 130 87 65 V/mV VO Output Voltage Swing RL ≥ 2k ±12 ±12 ±12 ±12 ±12 V VCM Input Common Mode VS = ±15V ±11 ±11 ±11 ±11 ±11 V Voltage Range CMRR Common Mode VCM = ±11V 86 86 86 86 86 dB Rejection Ratio PSRR Power Supply VS = ±10V to ±18V 90 90 90 90 90 dB Rejection Ratio IS Supply Current 7 7 7 7 7 mA SR Slew Rate AV = 1, VS = ±15V 10 10 9 9 9 V/µs CIN Input Capacitance 3(Typ) 3(Typ) 3(Typ) 3(Typ) 3(Typ) pF Rev D 2 For more information www.analog.com Document Outline Package Information Burn-In Circuit Table 2: Electrical Test Requirements Total Dose Bias Circuit Revision History