Datasheet RHK3845MKDICE (Analog Devices) - 6
| 制造商 | Analog Devices |
| 描述 | Radiation Hardened High Voltage Synchronous Step-Down Regulator Kit with Power NMOS FETs |
| 页数 / 页 | 14 / 6 — total Dose bias circuit — run MoDe. total Dose bias circuit — shutDoWn … |
| 文件格式/大小 | PDF / 225 Kb |
| 文件语言 | 英语 |
total Dose bias circuit — run MoDe. total Dose bias circuit — shutDoWn MoDe. burn-in circuit — run MoDe
该数据表的模型线
文件文字版本
DICE/DWF SPECIFICATION RH3845MKDICE
total Dose bias circuit — run MoDe
R5 1k R1 R8 4.99k VIN BOOST 750Ω R6 200k 3V SHDN TG 30V R2 CSS SW R9 8.82k 750Ω MODE VCC 0.1µF R7 200k RH3845MK 0.1µF R3 VFB BG 20V 1k R10 VC PGND 750Ω SYNC SENSE+ 10V R11 fSET SENSE– R4 1.24k GND 49.9k + + – 5V – 40V RH3845MK RUN MODE
total Dose bias circuit — shutDoWn MoDe
R4 1k R7 VIN BOOST 10k R5 200k R1 SHDN TG 30V 2k 2.5V CSS SW R8 R2 10k 2.49k MODE VCC R6 200k RH3845MK VFB BG 20V 0.1µF 0.1µF R9 VC PGND 10k SYNC SENSE+ 10V R10 fSET SENSE– 10k GND R3 49.9k + + – 5V – 40V RH3845MK SHDN MODE
burn-in circuit — run MoDe
1k 1k VIN GND 1W 100Ω 1k SHDN BOOST 200k 499Ω CSS TG 4.87k 10V MODE SW 1W RH3845MK V 10V FB VCC 200k 1W VC BG 10V 1W SYNC PGND 10V f 1W SET SENSE+ + 10V 1k GND SENSE– – 3.3V 1W +– 70V 10µF GND GND 10V 1µF 10V 1W 150V RH3845MK BURN IN-RUN 6 Document Outline Description Typical Application Description absolute Maximum Ratings Dice Pinout Table 1: Dice/DWF Electrical Test Limits Table 2: Electrical Characteristics Table 3: Electrical Characteristics Table 4: Electrical Test Requirements Total Dose Bias Circuit — Run Mode Total Dose Bias Circuit — Shutdown Mode Burn-in Circuit — run mode Typical Performance characteristics DESCRIPTION ABSOLUTE MAXIMUM RATINGS TABLE 1 Dice/DWF Electrical Test Limits TABLE 2 Electrical Characteristics TABLE 3 Electrical Characteristics Table 5. Electrical Test Requirements Total Dose Bias Circuit Burn-In Circuit Typical Performance Characteristics preirradiation Typical Performance Characteristics Post-irradiation Revision History
total Dose bias circuit — run MoDe
R5 1k R1 R8 4.99k VIN BOOST 750Ω R6 200k 3V SHDN TG 30V R2 CSS SW R9 8.82k 750Ω MODE VCC 0.1µF R7 200k RH3845MK 0.1µF R3 VFB BG 20V 1k R10 VC PGND 750Ω SYNC SENSE+ 10V R11 fSET SENSE– R4 1.24k GND 49.9k + + – 5V – 40V RH3845MK RUN MODE
total Dose bias circuit — shutDoWn MoDe
R4 1k R7 VIN BOOST 10k R5 200k R1 SHDN TG 30V 2k 2.5V CSS SW R8 R2 10k 2.49k MODE VCC R6 200k RH3845MK VFB BG 20V 0.1µF 0.1µF R9 VC PGND 10k SYNC SENSE+ 10V R10 fSET SENSE– 10k GND R3 49.9k + + – 5V – 40V RH3845MK SHDN MODE
burn-in circuit — run MoDe
1k 1k VIN GND 1W 100Ω 1k SHDN BOOST 200k 499Ω CSS TG 4.87k 10V MODE SW 1W RH3845MK V 10V FB VCC 200k 1W VC BG 10V 1W SYNC PGND 10V f 1W SET SENSE+ + 10V 1k GND SENSE– – 3.3V 1W +– 70V 10µF GND GND 10V 1µF 10V 1W 150V RH3845MK BURN IN-RUN 6 Document Outline Description Typical Application Description absolute Maximum Ratings Dice Pinout Table 1: Dice/DWF Electrical Test Limits Table 2: Electrical Characteristics Table 3: Electrical Characteristics Table 4: Electrical Test Requirements Total Dose Bias Circuit — Run Mode Total Dose Bias Circuit — Shutdown Mode Burn-in Circuit — run mode Typical Performance characteristics DESCRIPTION ABSOLUTE MAXIMUM RATINGS TABLE 1 Dice/DWF Electrical Test Limits TABLE 2 Electrical Characteristics TABLE 3 Electrical Characteristics Table 5. Electrical Test Requirements Total Dose Bias Circuit Burn-In Circuit Typical Performance Characteristics preirradiation Typical Performance Characteristics Post-irradiation Revision History