Datasheet LTC3642 (Analog Devices) - 3

制造商Analog Devices
描述High Efficiency, High Voltage 50mA Synchronous Step-Down Converter
页数 / 页22 / 3 — ELECTRICAL CHARACTERISTICS. The. denotes the specifications which apply …
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ELECTRICAL CHARACTERISTICS. The. denotes the specifications which apply over the full operating

ELECTRICAL CHARACTERISTICS The denotes the specifications which apply over the full operating

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LTC3642
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the full operating junction temperature range, otherwise specifications are for TA = 25°C (Note 2). VIN = 10V, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Input Supply (VIN)
VIN Input Voltage Operating Range 4.5 45 V UVLO VIN Undervoltage Lockout VIN Rising l 3.80 4.15 4.50 V VIN Falling l 3.75 4.00 4.35 V Hysteresis 150 mV OVLO VIN Overvoltage Lockout VIN Rising 47 50 52 V VIN Falling 45 48 50 V Hysteresis 2 V IQ DC Supply Current (Note 3) Active Mode 125 220 µA Sleep Mode 12 22 µA Shutdown Mode VRUN = 0V 3 6 µA
Output Supply (VOUT/VFB)
VOUT Output Voltage Trip Thresholds LTC3642-3.3V, VOUT Rising l 3.260 3.310 3.360 V LTC3642-3.3V, VOUT Falling l 3.240 3.290 3.340 V LTC3642-5V, VOUT Rising l 4.940 5.015 5.090 V LTC3642-5V, VOUT Falling l 4.910 4.985 5.060 V VFB Feedback Comparator Trip Voltage VFB Rising l 0.792 0.800 0.808 V VHYST Feedback Comparator Hysteresis Voltage l 3 5 7 mV IFB Feedback Pin Current Adjustable Output Version, VFB = 1V –10 0 10 nA ∆VLINEREG Feedback Voltage Line Regulation VIN = 4.5V to 45V 0.001 %/V LTC3642-5, VIN = 6V to 45V
Operation
VRUN Run Pin Threshold Voltage RUN Rising 1.17 1.21 1.25 V RUN Falling 1.06 1.10 1.14 V Hysteresis 110 mV IRUN Run Pin Leakage Current RUN = 1.3V –10 0 10 nA VHYSTL Hysteresis Pin Voltage Low RUN < 1V, IHYST = 1mA 0.07 0.1 V IHYST Hysteresis Pin Leakage Current VHYST = 1.3V –10 0 10 nA ISS Soft-Start Pin Pull-Up Current VSS < 1.5V 4.5 5.5 6.5 µA tINTSS Internal Soft-Start Time SS Pin Floating 0.75 ms IPEAK Peak Current Trip Threshold ISET Floating l 100 115 130 mA 500k Resistor from ISET to GND 55 mA ISET Shorted to GND 20 25 32 mA RON Power Switch On-Resistance Top Switch ISW = –25mA 3.0 Ω Bottom Switch ISW = 25mA 1.5 Ω
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings maximum ambient temperature consistent with these specifications is may cause permanent damage to the device. Exposure to any Absolute determined by specific operating conditions in conjunction with board Maximum Rating condition for extended periods may affect device layout, the rated package thermal impedance and other environmental reliability and lifetime. factors. The junction temperature (TJ, in °C) is calculated from the ambient
Note 2:
The LTC3642 is tested under pulsed load conditions such that T temperature (T J ≈ TA. A, in °C) and power dissipation (PD, in Watts) according to LTC3642E is guaranteed to meet specifications from 0°C to 85°C junction the formula: temperature. Specifications over the –40°C to 125°C operating junction TJ = TA + (PD • θJA), where θJA (in °C/W) is the package thermal temperature range are assured by design, characterization and correlation impedance. with statistical process controls. The LTC3642I is guaranteed over the
Note 3:
Dynamic supply current is higher due to the gate charge being full –40°C to 125°C operating junction temperature range. Note that the delivered at the switching frequency. See Applications Information. 3642fc 3 Document Outline FEATURES DESCRIPTION APPLICATIONS TYPICAL APPLICATION ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION ORDER INFORMATION ELECTRICAL CHARACTERISTICS TYPICAL PERFORMANCE CHARACTERISTICS PIN FUNCTIONS BLOCK DIAGRAM OPERATION APPLICATIONS INFORMATION TYPICAL APPLICATIONS PACKAGE DESCRIPTION REVISION HISTORY TYPICAL APPLICATION RELATED PARTS