Datasheet LTC3810 (Analog Devices) - 4
| 制造商 | Analog Devices |
| 描述 | 100V Current Mode Synchronous Switching Regulator Controller |
| 页数 / 页 | 38 / 4 — The. ELECTRICAL CHARACTERISTICS. denotes specifi cations which apply over … |
| 文件格式/大小 | PDF / 491 Kb |
| 文件语言 | 英语 |
The. ELECTRICAL CHARACTERISTICS. denotes specifi cations which apply over the full operating
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LTC3810
The ELECTRICAL CHARACTERISTICS
l
denotes specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C (Note 2), INTVCC = DRVCC = VBOOST = VON = VRNG = SHDN = UVIN = VEXTVCC = VNDRV = 10V, VMODE/SYNC = VSENSE+ = VSENSE– = VBGRTN = VSW = 0V, unless otherwise specifi ed. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Tracking
ISS/TRACK SS/TRACK Source Current VSS/TRACK > 0.5V 0.7 1.4 2.5 μA VFB,TRACK Feedback Voltage at Tracking VTRACK = 0V, ITH = 1.2V (Note 4) –0.018 V VTRACK = 0.5V, ITH = 1.2V (Note 4) 0.48 0.5 0.52 V
VCC Regulators
VEXTVCC EXTVCC Switchover Voltage EXTVCC Rising l 6.4 6.7 V EXTVCC Hysteresis 0.1 0.3 0.5 V VINTVCC,1 INTVCC Voltage from EXTVCC 10.5V < VEXTVCC < 15V 9.4 10 10.6 V ∆VEXTVCC,1 VEXTVCC – VINTVCC at Dropout ICC = 20mA, VEXTVCC = 9.1V 170 250 mV ∆VLOADREG,1 INTVCC Load Regulation from EXTVCC ICC = 0mA to 20mA, VEXTVCC = 12V 0.01 % VINTVCC,2 INTVCC Voltage from NDRV Regulator Linear Regulator in Operation 9.4 10 10.6 V ∆VLOADREG,2 INTVCC Load Regulation from NDRV ICC = 0mA to 20mA, VEXTVCC = 0 0.01 % INDRV Current into NDRV Pin VNDRV – VINTVCC = 3V 20 40 60 μA INDRVTO Linear Regulator Timeout Enable 210 270 350 μA Threshold VCCSR Maximum Supply Voltage Trickle Charger Shunt Regulator 15 V ICCSR Maximum Current into NDRV/INTVCC Trickle Charger Shunt Regulator, 10 mA INTVCC ≤ 16.7V (Note 8)
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 4:
The LTC3810 is tested in a feedback loop that servos VFB to the may cause permanent damage to the device. Exposure to any Absolute reference voltage with the ITH pin forced to a voltage between 1V and 2V. Maximum Rating condition for extended periods may affect device
Note 5:
The dynamic input supply current is higher due to the power reliability and lifetime. MOSFET gate charging being delivered at the switching frequency
Note 2:
The LTC3810 is tested under pulsed load conditions such that (QG • fOSC). TJ ≈ TA. The LTC3810E is guaranteed to meet performance specifi cations
Note 6:
Guaranteed by design. Not subject to test. from 0°C to 85°C. Specifi cations over the –40°C to 125°C operating
Note 7:
This IC includes overtemperature protection that is intended junction temperature range are assured by design, characterization and to protect the device during momentary overload conditions. Junction correlation with statistical process controls. The LTC3810I is guaranteed temperature will exceed 125°C when overtemperature protection is active. to meet perfomance specifi cations over the full –40°C to 125°C operating Continuous operation above the specifi ed maximum operating junction junction temperature range. temperature may impair device reliability.
Note 3:
TJ is calculated from the ambient temperature TA and power
Note 8:
ICC is the sum of current into NDRV and INTVCC. dissipation PD according to the following formula: LTC3810: TJ = TA + (PD • 100°C/W)
PARAMETER LTC3810 LTC3810-5 LTC3812-5
Maximum VIN 100V 60V 60V MOSFET Gate Drive 6.35V to 14V 4.5V to 14V 4.5V to 14V INTVCC UV+ 6.2V 4.2V 4.2V INTVCC UV– 6V 4V 4V 3810fc 4
The ELECTRICAL CHARACTERISTICS
l
denotes specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C (Note 2), INTVCC = DRVCC = VBOOST = VON = VRNG = SHDN = UVIN = VEXTVCC = VNDRV = 10V, VMODE/SYNC = VSENSE+ = VSENSE– = VBGRTN = VSW = 0V, unless otherwise specifi ed. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Tracking
ISS/TRACK SS/TRACK Source Current VSS/TRACK > 0.5V 0.7 1.4 2.5 μA VFB,TRACK Feedback Voltage at Tracking VTRACK = 0V, ITH = 1.2V (Note 4) –0.018 V VTRACK = 0.5V, ITH = 1.2V (Note 4) 0.48 0.5 0.52 V
VCC Regulators
VEXTVCC EXTVCC Switchover Voltage EXTVCC Rising l 6.4 6.7 V EXTVCC Hysteresis 0.1 0.3 0.5 V VINTVCC,1 INTVCC Voltage from EXTVCC 10.5V < VEXTVCC < 15V 9.4 10 10.6 V ∆VEXTVCC,1 VEXTVCC – VINTVCC at Dropout ICC = 20mA, VEXTVCC = 9.1V 170 250 mV ∆VLOADREG,1 INTVCC Load Regulation from EXTVCC ICC = 0mA to 20mA, VEXTVCC = 12V 0.01 % VINTVCC,2 INTVCC Voltage from NDRV Regulator Linear Regulator in Operation 9.4 10 10.6 V ∆VLOADREG,2 INTVCC Load Regulation from NDRV ICC = 0mA to 20mA, VEXTVCC = 0 0.01 % INDRV Current into NDRV Pin VNDRV – VINTVCC = 3V 20 40 60 μA INDRVTO Linear Regulator Timeout Enable 210 270 350 μA Threshold VCCSR Maximum Supply Voltage Trickle Charger Shunt Regulator 15 V ICCSR Maximum Current into NDRV/INTVCC Trickle Charger Shunt Regulator, 10 mA INTVCC ≤ 16.7V (Note 8)
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 4:
The LTC3810 is tested in a feedback loop that servos VFB to the may cause permanent damage to the device. Exposure to any Absolute reference voltage with the ITH pin forced to a voltage between 1V and 2V. Maximum Rating condition for extended periods may affect device
Note 5:
The dynamic input supply current is higher due to the power reliability and lifetime. MOSFET gate charging being delivered at the switching frequency
Note 2:
The LTC3810 is tested under pulsed load conditions such that (QG • fOSC). TJ ≈ TA. The LTC3810E is guaranteed to meet performance specifi cations
Note 6:
Guaranteed by design. Not subject to test. from 0°C to 85°C. Specifi cations over the –40°C to 125°C operating
Note 7:
This IC includes overtemperature protection that is intended junction temperature range are assured by design, characterization and to protect the device during momentary overload conditions. Junction correlation with statistical process controls. The LTC3810I is guaranteed temperature will exceed 125°C when overtemperature protection is active. to meet perfomance specifi cations over the full –40°C to 125°C operating Continuous operation above the specifi ed maximum operating junction junction temperature range. temperature may impair device reliability.
Note 3:
TJ is calculated from the ambient temperature TA and power
Note 8:
ICC is the sum of current into NDRV and INTVCC. dissipation PD according to the following formula: LTC3810: TJ = TA + (PD • 100°C/W)
PARAMETER LTC3810 LTC3810-5 LTC3812-5
Maximum VIN 100V 60V 60V MOSFET Gate Drive 6.35V to 14V 4.5V to 14V 4.5V to 14V INTVCC UV+ 6.2V 4.2V 4.2V INTVCC UV– 6V 4V 4V 3810fc 4