Datasheet IRF5210SPbF, IRF5210LPbF (Infineon) - 2
| 制造商 | Infineon |
| 页数 / 页 | 10 / 2 — Electrical Characteristics @ TJ = 25°C (unless otherwise specified). … |
| 文件格式/大小 | PDF / 318 Kb |
| 文件语言 | 英语 |
Electrical Characteristics @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. Max. Units. Conditions
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IRF5210S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 60 mΩ VGS = 10V, ID = -38A f VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 9.5 ––– ––– S VDS = -50V, ID = -23A IDSS Drain-to-Source Leakage Current ––– ––– -50 µA VDS = -100V, VGS = 0V ––– ––– -250 VDS = -80V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– 150 230 nC ID = -23A Qgs Gate-to-Source Charge ––– 22 33 VDS = -80V Qgd Gate-to-Drain ("Mil er") Charge ––– 81 120 VGS = -10V f td(on) Turn-On Delay Time ––– 14 ––– ns VDD = -50V tr Rise Time ––– 63 ––– ID = -23A td(off) Turn-Off Delay Time ––– 72 ––– RG = 2.4Ω tf Fall Time ––– 55 ––– VGS = -10V f LD Internal Drain Inductance ––– 4.5 ––– nH Between lead, 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 2780 ––– pF VGS = 0V Coss Output Capacitance ––– 800 ––– VDS = -25V Crss Reverse Transfer Capacitance ––– 430 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– -38 MOSFET symbol (Body Diode) A showing the ISM Pulsed Source Current ––– ––– -140 integral reverse (Body Diode)c p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -23A, VGS = 0V f trr Reverse Recovery Time ––– 170 260 ns TJ = 25°C, IF = -23A, VDD = -25V Qrr Reverse Recovery Charge ––– 1180 1770 nC di/dt = -100A/µs f ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 11) When mounted on 1" square PCB (FR-4or G-10 Starting T Material). For recommended footprint and soldering J = 25°C, L = 0.46mH R techniques refer to application note #AN-994. G = 25Ω, IAS = -23A. (See Figure 12) ISD ≤ -23A, di/dt ≤ -650A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. 2 www.irf.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 60 mΩ VGS = 10V, ID = -38A f VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 9.5 ––– ––– S VDS = -50V, ID = -23A IDSS Drain-to-Source Leakage Current ––– ––– -50 µA VDS = -100V, VGS = 0V ––– ––– -250 VDS = -80V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– 150 230 nC ID = -23A Qgs Gate-to-Source Charge ––– 22 33 VDS = -80V Qgd Gate-to-Drain ("Mil er") Charge ––– 81 120 VGS = -10V f td(on) Turn-On Delay Time ––– 14 ––– ns VDD = -50V tr Rise Time ––– 63 ––– ID = -23A td(off) Turn-Off Delay Time ––– 72 ––– RG = 2.4Ω tf Fall Time ––– 55 ––– VGS = -10V f LD Internal Drain Inductance ––– 4.5 ––– nH Between lead, 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 2780 ––– pF VGS = 0V Coss Output Capacitance ––– 800 ––– VDS = -25V Crss Reverse Transfer Capacitance ––– 430 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– -38 MOSFET symbol (Body Diode) A showing the ISM Pulsed Source Current ––– ––– -140 integral reverse (Body Diode)c p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -23A, VGS = 0V f trr Reverse Recovery Time ––– 170 260 ns TJ = 25°C, IF = -23A, VDD = -25V Qrr Reverse Recovery Charge ––– 1180 1770 nC di/dt = -100A/µs f ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 11) When mounted on 1" square PCB (FR-4or G-10 Starting T Material). For recommended footprint and soldering J = 25°C, L = 0.46mH R techniques refer to application note #AN-994. G = 25Ω, IAS = -23A. (See Figure 12) ISD ≤ -23A, di/dt ≤ -650A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. 2 www.irf.com