Datasheet LT6559 (Analog Devices) - 3

制造商Analog Devices
描述Low Cost 5V/±5V 300MHz Triple Video Amplifier in 3mm x 3mm QFN
页数 / 页16 / 3 — The. 5V ELECTRICAL CHARACTERISTICS. denotes specifi cations which apply …
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The. 5V ELECTRICAL CHARACTERISTICS. denotes specifi cations which apply over the specifi ed operating

The 5V ELECTRICAL CHARACTERISTICS denotes specifi cations which apply over the specifi ed operating

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LT6559
The 5V ELECTRICAL CHARACTERISTICS

denotes specifi cations which apply over the specifi ed operating temperature range, otherwise specifi cations are at TA = 25°C. For each amplifi er: VCM = 2.5V, VS = 5V,

E

N = 0V, pulse tested, unless otherwise noted. (Note 4) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOUTL Maximum Output Voltage Swing, Low RL = 150Ω 1.05 1.15 V RL = 150Ω ● 1.35 V CMRR Common Mode Rejection Ratio VCM = 1.5V to 3.5V 40 50 dB PSRR Power Supply Rejection Ratio VS = ±2V to ±5V, ⎯E⎯N = V– 56 70 dB R – OL Transimpedance, ΔVOUT/ΔIIN VOUT = 1.5V to 3.5V, RL = 150Ω 40 80 kΩ IOUT Maximum Output Current RL = 0Ω 65 mA IS Supply Current per Amplifi er ● 3.9 6.1 mA Disable Supply Current per Amplifi er ⎯E⎯N Pin Voltage = 4.5V, RL = 150Ω ● 0.1 100 µA I⎯E⎯N Enable Pin Current 30 µA SR Slew Rate (Note 6) AV = 10, RL = 150Ω, VS = ±5V 500 V/µs tON Turn-On Delay Time (Note 7) RF = RG = 301Ω, RL = 150Ω, VS = ±5V 30 75 ns tOFF Turn-Off Delay Time (Note 7) RF = RG = 301Ω, RL = 150Ω, VS = ±5V 40 100 ns tr, tf Small-Signal Rise and Fall Time RF = RG = 301Ω, RL = 150Ω, VOUT = 1VP-P, 1.3 ns VS = ±5V tPD Propagation Delay RF = RG = 301Ω, RL = 150Ω, VOUT = 1VP-P, 2.5 ns VS = ±5V os Small-Signal Overshoot RF = RG = 301Ω, RL = 150Ω, VOUT = 1VP-P, 10 % VS = ±5V tS Settling Time 0.1%, AV = –1V, RF = RG = 301Ω, RL = 25 ns 150Ω, VS = ±5V dG Differential Gain (Note 8) RF = RG = 301Ω, RL = 150Ω, VS = ±5V 0.13 % dP Differential Phase (Note 8) RF = RG = 301Ω, RL = 150Ω, VS = ±5V 0.10 DEG
The ±5V ELECTRICAL CHARACTERISTICS

denotes specifi cations which apply over the specifi ed operating temperature range, otherwise specifi cations are at TA = 25°C. For each amplifi er: VCM = 0V, VS = ±5V,

E

N = 0V, pulse tested, unless otherwise noted. (Note 4) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage 1.5 10 mV ΔVOS/ΔT Input Offset Voltage Drift ● 15 µV/°C I + IN Noninverting Input Current 10 25 µA I – IN Inverting Input Current 10 60 µA en Input Noise Voltage Density f = 1kHz, RF = 1k, RG = 10Ω, RS = 0Ω 4.5 nV/√⎯H⎯z +in Noninverting Input Noise Current f = 1kHz 6 pA/√⎯H⎯z Density –in Inverting Input Noise Current Density f = 1kHz 25 pA/√⎯H⎯z RIN Input Resistance VIN = ±3.5V 1 MΩ CIN Input Capacitance Amplifi er Enabled 2.0 pF Amplifi er Disabled 2.5 pF COUT Output Capacitance Amplifi er Disabled 8.5 pF VINH Input Voltage Range, High VS = ±5V 3.5 4.0 V VINL Input Voltage Range, Low –4.0 –3.5 V VOUTH Maximum Output Voltage Swing, High RL = 100k 4.0 4.2 V 6559f 3