LT1220 WUTYPICAL PERFORMANCE CHARACTERISTICSLarge Signal, AV = 1,Small Signal, ALarge Signal, AV = 1V = 1CL = 10,000pF R LT1220 • TPC19 LT1220 • TPC20 LT1220 • TPC21 G = 0 VIN = 100mV RG = 0 VIN = 20V R V G = 0 IN = 10V VS = ±15V f = 5MHz VS = ±15V f = 2MHz V f = 20kHz S = ±15V Small Signal, AV = – 1,Small Signal, AV = – 1Large Signal, AV = – 1CL = 1,000pF R LT1220 • TPC22 LT1220 • TPC23 LT1220 • TPC24 F = RG = 1k VIN = 100mV RF = RG = 1k VIN = 20V R V F = RG = 1k IN = 200mV VS = ±15V f = 5MHz VS = ±15V f = 2MHz V f = 200kHz S = ±15V UUWUAPPLICATIONS INFORMATION The LT1220 may be inserted directly into HA2505/15/25, Layout and Passive Components HA2541/2/4, AD817, AD847, EL2020, EL2044 and LM6361 The LT1220 amplifier is easy to apply and tolerant of less applications, provided that the nulling circuitry is removed. than ideal layouts. For maximum performance (for ex- The suggested nulling circuit for the LT1220 is shown in ample, fast settling time) use a ground plane, short lead the following figure. lengths and RF-quality bypass capacitors (0.01µF to 0.1µF). For high driver current applications use low ESR bypass Offset Nulling capacitors (1µF to 10µF tantalum). Sockets should be avoided when maximum frequency performance is re- V+ quired, although low profile sockets can provide reason- 5k 1 0.1µF able performance up to 50MHz. For more details see 3 8 + Design Note 50. Feedback resistors greater than 5k are not 7 6 LT1220 recommended because a pole is formed with the input 2 4 – capacitance which can cause peaking or oscillations. 0.1µF V– LT1220 • AI01 6