Datasheet RH1814M (Analog Devices) - 6

制造商Analog Devices
描述Quad 3mA, 100MHz, 750V/µs Operational Amplifier
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TABLE 2: ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS. SUBGROUP. PDA Test Notes. TOTAL DOSE BIAS CIRCUIT

TABLE 2: ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUP PDA Test Notes TOTAL DOSE BIAS CIRCUIT

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RH1814M
TABLE 2: ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUP PDA Test Notes
The PDA is specified as 5% based on failures from group A, subgroup 1, Final Electrical Test Requirements (Method 5004) 1*,2,3,4,5,6 tests after cooldown as the final electrical test in accordance with method Group A Test Requirements (Method 5005) 1,2,3,4,5,6 5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after Group B and D for Class S 1,2,3 burn-in divided by the total number of devices submitted for burn-in in End Point Electrical Parameters (Method 5005) that lot shall be used to determine the percent for the lot. * PDA applies to subgroup 1. See PDA Test Notes. Linear Technology Corporation reserves the right to test to tighter limits than those given.
TOTAL DOSE BIAS CIRCUIT
10k 5V – 10k 2.5V + –5V RH1814M TDBC
TYPICAL PERFORMANCE CHARACTERISTICS Supply Current (Per Amplifier) Positive Slew Rate Negative Slew Rate
4.0 600 600 V V S = ±5V VS = ±5V S = ±5V R R L = 10k RL = 10k L = 10k 3.5 500 500 3.0 400 400 SUPPLY CURRENT (mA) 2.5 POSITIVE SLEW RATE (V/µs) NEGATIVE SLEW RATE (V/µs) 2.0 300 300 1 10 100 1000 1 10 100 1000 1 10 100 1000 TOTAL DOSE KRAD (Si) TOTAL DOSE KRAD (Si) TOTAL DOSE KRAD (Si) RH1814M G01 RH1814M G02 RH1814M G03 1814mfb 6 Document Outline Description Absolute Maximum Ratings Electrical Characteristics Burn-In Circuit Package Information Table 1: Electrical Characteristics Table 2: Electrical Characteristics Table 1: Electrical Characteristics Table 2: Electrical Characteristics TABLE 2: Electrical Test Requirements Total Dose Bias Circuit Typical Performance Characteristics Revision History