Datasheet LT6552 (Analog Devices) - 5
| 制造商 | Analog Devices |
| 描述 | 3.3V Single Supply Video Difference Amplifier |
| 页数 / 页 | 16 / 5 — 5V ELECTRICAL CHARACTERISTICS The. denotes the specifications which apply … |
| 文件格式/大小 | PDF / 364 Kb |
| 文件语言 | 英语 |
5V ELECTRICAL CHARACTERISTICS The. denotes the specifications which apply over the full operating
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LT6552
5V ELECTRICAL CHARACTERISTICS The
●
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. VS = 5V, 0V. Figure 1 shows the DC test circuit, VREF = VCM = 1V, VDIFF = 0V, VSHDN = V+, unless otherwise noted. RL = RF + RG = 1k. (Note 6) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
tON Turn-On Time VSHDN from 0.5V to 4.7V 250 ns tOFF Turn-Off Time VSHDN from 4.7V to 0.5V 450 ns Shutdown Output Leakage Current VSHDN = 0.5V, 0V ≤ VOUT ≤ V+ ● 0.25 µA ±
5V ELECTRICAL CHARACTERISTICS The
●
denotes the specifications which apply over the full operat- ing temperature range, otherwise specifications are at TA = 25
°
C. VS =
±
5V. Figure 2 shows the DC test circuit, VREF = VCM = 0V, VDIFF = 0V, VSHDN = V+, unless otherwise noted. RL = RF + RG = 1k. (Note 6) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage Both Inputs (Note 7) 10 25 mV ● 30 mV ∆VOS/∆T Input VOS Drift ● 50 µV/°C IB Input Bias Current Any Input ● 25 50 µA IOS Input Offset Current Either Input Pair ● 1 5 µA en Input Noise Voltage Density f = 10kHz 55 nV/√Hz in Input Noise Current Density f = 10kHz 0.7 pA/√Hz RIN Input Resistance Common Mode, VCM = –5V to 3V 300 kΩ CMRR Common Mode Rejection Ratio VCM = –5V to 3V ● 58 75 dB Input Range ● –5 3 V PSRR Power Supply Rejection VS = ±2V to ±6V, VCM = 0V ● 48 54 dB GE Gain Error VO = –3V to 3V, RL = 1k ● 1 3 % RL = 150Ω ● 1 3 % Output Voltage Swing (VDIFF = ± 0.6V), VREF (Pin 1) = 0V, AV = 10 RL = 1k ● ±4.8 ±4.875 V RL = 150Ω ● ±3.6 ±4.3 V RL = 75Ω, 0°C ≤ TA ≤ 70°C (Only) ● ±2.75 ±3.4 V SR Slew Rate VCM = 0V, VDIFF = –1.5V to +1.5V, 400 600 V/µs VO = –5V to 5V Measure from –2V to 2V, RL = 150Ω FPBW Full-Power Bandwidth VO = 6VP-P (Note 9) 30 MHz BW Small-Signal –3dB Bandwidth AV = 2, RL = 150Ω 75 MHz tr, tf Rise Time, Fall Time AV = 50, VO = –3V to 3V, 20% to 80% 125 175 ns tS Settling Time to 3% AV = 2, ∆VOUT = 6V, Positive Step 25 ns Settling Time to 1% RL = 150Ω 35 ns Differential Gain AV = 2, RL = 150Ω, Output Black Level = 0V 0.2 % Differential Phase AV = 2, RL = 150Ω, Output Black Level = 0V 0.15 Deg ISC Short-Circuit Current VOUT = 0V, VDIFF = ±1V 50 70 mA 0°C ≤ TA ≤ 70°C ● 45 mA –40°C ≤ TA ≤ 85°C ● 35 mA Supply Current Shutdown VSHDN = –4.5V ● 650 1400 µA IS Supply Current 14 16.5 mA ● 18.5 mA VL Shutdown Pin Input Low Voltage ● –4.5 V VH Shutdown Pin Input High Voltage ● 4.7 V 6552f 5
5V ELECTRICAL CHARACTERISTICS The
●
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. VS = 5V, 0V. Figure 1 shows the DC test circuit, VREF = VCM = 1V, VDIFF = 0V, VSHDN = V+, unless otherwise noted. RL = RF + RG = 1k. (Note 6) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
tON Turn-On Time VSHDN from 0.5V to 4.7V 250 ns tOFF Turn-Off Time VSHDN from 4.7V to 0.5V 450 ns Shutdown Output Leakage Current VSHDN = 0.5V, 0V ≤ VOUT ≤ V+ ● 0.25 µA ±
5V ELECTRICAL CHARACTERISTICS The
●
denotes the specifications which apply over the full operat- ing temperature range, otherwise specifications are at TA = 25
°
C. VS =
±
5V. Figure 2 shows the DC test circuit, VREF = VCM = 0V, VDIFF = 0V, VSHDN = V+, unless otherwise noted. RL = RF + RG = 1k. (Note 6) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage Both Inputs (Note 7) 10 25 mV ● 30 mV ∆VOS/∆T Input VOS Drift ● 50 µV/°C IB Input Bias Current Any Input ● 25 50 µA IOS Input Offset Current Either Input Pair ● 1 5 µA en Input Noise Voltage Density f = 10kHz 55 nV/√Hz in Input Noise Current Density f = 10kHz 0.7 pA/√Hz RIN Input Resistance Common Mode, VCM = –5V to 3V 300 kΩ CMRR Common Mode Rejection Ratio VCM = –5V to 3V ● 58 75 dB Input Range ● –5 3 V PSRR Power Supply Rejection VS = ±2V to ±6V, VCM = 0V ● 48 54 dB GE Gain Error VO = –3V to 3V, RL = 1k ● 1 3 % RL = 150Ω ● 1 3 % Output Voltage Swing (VDIFF = ± 0.6V), VREF (Pin 1) = 0V, AV = 10 RL = 1k ● ±4.8 ±4.875 V RL = 150Ω ● ±3.6 ±4.3 V RL = 75Ω, 0°C ≤ TA ≤ 70°C (Only) ● ±2.75 ±3.4 V SR Slew Rate VCM = 0V, VDIFF = –1.5V to +1.5V, 400 600 V/µs VO = –5V to 5V Measure from –2V to 2V, RL = 150Ω FPBW Full-Power Bandwidth VO = 6VP-P (Note 9) 30 MHz BW Small-Signal –3dB Bandwidth AV = 2, RL = 150Ω 75 MHz tr, tf Rise Time, Fall Time AV = 50, VO = –3V to 3V, 20% to 80% 125 175 ns tS Settling Time to 3% AV = 2, ∆VOUT = 6V, Positive Step 25 ns Settling Time to 1% RL = 150Ω 35 ns Differential Gain AV = 2, RL = 150Ω, Output Black Level = 0V 0.2 % Differential Phase AV = 2, RL = 150Ω, Output Black Level = 0V 0.15 Deg ISC Short-Circuit Current VOUT = 0V, VDIFF = ±1V 50 70 mA 0°C ≤ TA ≤ 70°C ● 45 mA –40°C ≤ TA ≤ 85°C ● 35 mA Supply Current Shutdown VSHDN = –4.5V ● 650 1400 µA IS Supply Current 14 16.5 mA ● 18.5 mA VL Shutdown Pin Input Low Voltage ● –4.5 V VH Shutdown Pin Input High Voltage ● 4.7 V 6552f 5