Datasheet LT1809, LT1810 (Analog Devices) - 5
| 制造商 | Analog Devices |
| 描述 | Single/Dual 180MHz, 350V/µs Rail-to-Rail Input and Output Low Distortion Op Amps |
| 页数 / 页 | 24 / 5 — ELECTRICAL CHARACTERISTICS. The. denotes the specifi cations which apply … |
| 文件格式/大小 | PDF / 301 Kb |
| 文件语言 | 英语 |
ELECTRICAL CHARACTERISTICS. The. denotes the specifi cations which apply over the 0°C ≤ TA ≤ 70°C
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LT1809/LT1810
ELECTRICAL CHARACTERISTICS The
l
denotes the specifi cations which apply over the 0°C ≤ TA ≤ 70°C temperature range. VS = 5V, 0V; VS = 3V, 0V; VSHDN = open; VCM = VOUT = half supply, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOH Output Voltage Swing HIGH (Note 7) No Load l 50 120 mV ISOURCE = 5mA l 110 220 mV ISOURCE = 25mA l 370 700 mV ISC Short-Circuit Current VS = 5V l ±40 ±75 mA VS = 3V l ±30 ± 65 mA IS Supply Current per Amplifi er l 15 20 mA Supply Current, Shutdown VS = 5V, VSHDN = 0.3V l 0.58 1.4 mA VS = 3V, VSHDN = 0.3V l 0.35 1.1 mA ISHDN SHDN Pin Current VS = 5V, VSHDN = 0.3V l 420 850 μA VS = 3V, VSHDN = 0.3V l 220 550 μA Output Leakage Current, Shutdown VSHDN = 0.3V l 2 μA VL SHDN Pin Input Voltage Low l 0.3 V VH SHDN Pin Input Voltage High l VS – 0.5 V tON Turn-On Time VSHDN = 0.3V to 4.5V, RL = 100 l 80 ns tOFF Turn-Off Time VSHDN = 4.5V to 0.3V, RL = 100 l 50 ns GBW Gain-Bandwidth Product Frequency = 2MHz l 145 MHz SR Slew Rate VS = 5V, AV = –1, RL = 1k, VO = 4VP-P l 250 V/μs FPBW Full Power Bandwidth VS = 5V, VOUT = 4VP-P l 20 MHz
The
l
denotes the specifi cations which apply over the – 40°C ≤ TA ≤ 85°C temperature range. VS = 5V, 0V; VS = 3V, 0V; VSHDN = open; VCM = VOUT = half supply, unless otherwise noted. (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage VCM = V + LT1809 SO-8 l 1 3.5 mV VCM = V– LT1809 SO-8 l 1 3.5 mV VCM = V+ l 1 4.0 mV VCM = V– l 1 4.0 mV VOS TC Input Offset Voltage Drift (Note 8) VCM = V+ l 9 25 μV/°C VCM = V– l 9 25 μV/°C ΔV l OS Input Offset Voltage Shift VCM = V– to V+ LT1809 SO-8 0.5 3.0 mV VCM = V– l 0.5 3.5 mV Input Offset Voltage Match (Channel-to-Channel) VCM = V+, VCM = V – l 1.2 7 mV (Note 10) IB Input Bias Current VCM = V+ – 0.2V l 2 12 μA VCM = V– + 0.4V l –35 –17 μA ΔIB Input Bias Current Shift VCM = V – + 0.4V to V+ – 0.2V l 19 47 μA Input Bias Current Match (Channel-to-Channel) VCM = V+ – 0.2V l 0.2 6 μA (Note 10) VCM = V– + 0.4V l 0.6 12 μA IOS Input Offset Current VCM = V+ – 0.2V l 0.08 2 μA VCM = V– + 0.4V l 0.5 6 μA ΔIOS Input Offset Current Shift VCM = V– + 0.4V to V+ – 0.2V l 0.58 7.5 μA AVOL Large-Signal Voltage Gain VS = 5V, VO = 0.5V to 4.5V, RL = 1k to VS/2 l 17 60 V/mV VS = 5V, VO = 1V to 4V, RL = 100Ω to VS/2 l 2.5 7 V/mV VS = 3V, VO = 0.5V to 2.5V, RL = 1k to VS/2 l 10 35 V/mV 180910fa 5
ELECTRICAL CHARACTERISTICS The
l
denotes the specifi cations which apply over the 0°C ≤ TA ≤ 70°C temperature range. VS = 5V, 0V; VS = 3V, 0V; VSHDN = open; VCM = VOUT = half supply, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOH Output Voltage Swing HIGH (Note 7) No Load l 50 120 mV ISOURCE = 5mA l 110 220 mV ISOURCE = 25mA l 370 700 mV ISC Short-Circuit Current VS = 5V l ±40 ±75 mA VS = 3V l ±30 ± 65 mA IS Supply Current per Amplifi er l 15 20 mA Supply Current, Shutdown VS = 5V, VSHDN = 0.3V l 0.58 1.4 mA VS = 3V, VSHDN = 0.3V l 0.35 1.1 mA ISHDN SHDN Pin Current VS = 5V, VSHDN = 0.3V l 420 850 μA VS = 3V, VSHDN = 0.3V l 220 550 μA Output Leakage Current, Shutdown VSHDN = 0.3V l 2 μA VL SHDN Pin Input Voltage Low l 0.3 V VH SHDN Pin Input Voltage High l VS – 0.5 V tON Turn-On Time VSHDN = 0.3V to 4.5V, RL = 100 l 80 ns tOFF Turn-Off Time VSHDN = 4.5V to 0.3V, RL = 100 l 50 ns GBW Gain-Bandwidth Product Frequency = 2MHz l 145 MHz SR Slew Rate VS = 5V, AV = –1, RL = 1k, VO = 4VP-P l 250 V/μs FPBW Full Power Bandwidth VS = 5V, VOUT = 4VP-P l 20 MHz
The
l
denotes the specifi cations which apply over the – 40°C ≤ TA ≤ 85°C temperature range. VS = 5V, 0V; VS = 3V, 0V; VSHDN = open; VCM = VOUT = half supply, unless otherwise noted. (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage VCM = V + LT1809 SO-8 l 1 3.5 mV VCM = V– LT1809 SO-8 l 1 3.5 mV VCM = V+ l 1 4.0 mV VCM = V– l 1 4.0 mV VOS TC Input Offset Voltage Drift (Note 8) VCM = V+ l 9 25 μV/°C VCM = V– l 9 25 μV/°C ΔV l OS Input Offset Voltage Shift VCM = V– to V+ LT1809 SO-8 0.5 3.0 mV VCM = V– l 0.5 3.5 mV Input Offset Voltage Match (Channel-to-Channel) VCM = V+, VCM = V – l 1.2 7 mV (Note 10) IB Input Bias Current VCM = V+ – 0.2V l 2 12 μA VCM = V– + 0.4V l –35 –17 μA ΔIB Input Bias Current Shift VCM = V – + 0.4V to V+ – 0.2V l 19 47 μA Input Bias Current Match (Channel-to-Channel) VCM = V+ – 0.2V l 0.2 6 μA (Note 10) VCM = V– + 0.4V l 0.6 12 μA IOS Input Offset Current VCM = V+ – 0.2V l 0.08 2 μA VCM = V– + 0.4V l 0.5 6 μA ΔIOS Input Offset Current Shift VCM = V– + 0.4V to V+ – 0.2V l 0.58 7.5 μA AVOL Large-Signal Voltage Gain VS = 5V, VO = 0.5V to 4.5V, RL = 1k to VS/2 l 17 60 V/mV VS = 5V, VO = 1V to 4V, RL = 100Ω to VS/2 l 2.5 7 V/mV VS = 3V, VO = 0.5V to 2.5V, RL = 1k to VS/2 l 10 35 V/mV 180910fa 5