Datasheet LT1195 (Analog Devices) - 4
| 制造商 | Analog Devices |
| 描述 | Low Power, High Speed Operational Amplifier |
| 页数 / 页 | 12 / 4 — +5V ELECTRICAL CHARACTERISTICS 0. VS =. 5V, Pin 5 open circuit, unless … |
| 文件格式/大小 | PDF / 347 Kb |
| 文件语言 | 英语 |
+5V ELECTRICAL CHARACTERISTICS 0. VS =. 5V, Pin 5 open circuit, unless otherwise noted. LT1195C. SYMBOL. PARAMETER. CONDITIONS. MIN
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LT1195
+5V ELECTRICAL CHARACTERISTICS 0
°
C
≤
TA
≤
70
°
C – VS =
±
5V, Pin 5 open circuit, unless otherwise noted. LT1195C SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage J8, N8 Package 3.0 10.0 mV S8 Package 3.0 15.0 mV ∆VOS/∆T Input VOS Drift 12 µV/°C IOS Input Offset Current 0.2 1.7 µA IB Input Bias Current ±0.5 ±2.5 µA CMRR Common Mode Rejection Ratio VCM = –2.5V to 3.5V 60 85 dB PSRR Power Supply Rejection Ratio VS = ±2.375V to ±5V 60 90 dB AVOL Large-Signal Voltage Gain RL = 1k, VOUT = ±3V 2.0 7.5 V/mV RL = 150Ω, VOUT = ±3V 0.3 1.5 V/mV VOUT Output Voltage Swing RL = 1k ±3.7 ±3.9 V IS Supply Current 12 17 mA Shutdown Supply Current Pin 5 at V – (Note 9) 0.9 2.0 mA IS/D Shutdown Pin Current Pin 5 at V – 5 25 µA
5V ELECTRICAL CHARACTERISTICS 0
°
C
≤
TA
≤
70
°
C V + – S = 5V, VS = OV, Pin 5 open circuit, unless otherwise noted. LT1195C SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage J8, N8 Package 1.0 10.0 mV S8 Package 1.0 15.0 mV ∆VOS/∆T Input VOS Drift 15 µV/°C IOS Input Offset Current 0.2 1.7 µA IB Input Bias Current ±0.5 ±2.5 µA Input Voltage Range (Note 4) 2.0 3.5 V CMRR Common Mode Rejection Ratio VCM = 2V to 3.5V 60 85 dB VOUT Output Voltage Swing RL = 150Ω to Ground VOUT High 3.5 3.75 V VOUT Low 0.15 0.4 V IS Supply Current 12 16 mA Shutdown Supply Current Pin 5 at V– (Note 9) 0.9 2.0 mA IS/D Shutdown Pin Current Pin 5 at V– 5 25 µA
Note 1:
Absolute Maximum Ratings are those values beyond which the life
Note 6:
Full power bandwidth is calculated from the slew rate of a device may be impaired. measurement: FPBW = SR/2πVP.
Note 2:
A heat sink may be required to keep the junction temperature
Note 7:
Settling time measurement techniques are shown in “Take the below absolute maximum when the output is shorted continuously. Guesswork Out of Settling Time Measurements,” EDN, September 19, 1985.
Note 3:
TJ is calculated from the ambient temperature TA and power
Note 8:
NTSC (3.58MHz). For RL = 1k, Diff AV = 0.3%, Diff Ph = 0.35°. dissipation PD according to the following formats:
Note 9:
See Applications Information section for shutdown at elevated LT1195MJ8/LT1195CJ8: TJ = TA + (PD • 100°C/W) temperatures. Do not operate the shutdown above TJ > 125°C. LT1195N: TJ = TA + (PD • 100°C/W)
Note 10:
AC parameters are 100% tested on the ceramic and plastic DIP LT1195CS: T packaged parts (J8 and N8 suffix) and are sample tested on every lot of J = TA + (PD • 150°C/ W)
Note 4:
Exceeding the input common mode range may cause the output the SO packaged parts (S8 suffix). to invert.
Note 11:
Do not operate at AV < 2 for TA < 0°C.
Note 5:
Slew rate is measured between ±1V on the output, with ±3V input step. 1195fa 4
+5V ELECTRICAL CHARACTERISTICS 0
°
C
≤
TA
≤
70
°
C – VS =
±
5V, Pin 5 open circuit, unless otherwise noted. LT1195C SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage J8, N8 Package 3.0 10.0 mV S8 Package 3.0 15.0 mV ∆VOS/∆T Input VOS Drift 12 µV/°C IOS Input Offset Current 0.2 1.7 µA IB Input Bias Current ±0.5 ±2.5 µA CMRR Common Mode Rejection Ratio VCM = –2.5V to 3.5V 60 85 dB PSRR Power Supply Rejection Ratio VS = ±2.375V to ±5V 60 90 dB AVOL Large-Signal Voltage Gain RL = 1k, VOUT = ±3V 2.0 7.5 V/mV RL = 150Ω, VOUT = ±3V 0.3 1.5 V/mV VOUT Output Voltage Swing RL = 1k ±3.7 ±3.9 V IS Supply Current 12 17 mA Shutdown Supply Current Pin 5 at V – (Note 9) 0.9 2.0 mA IS/D Shutdown Pin Current Pin 5 at V – 5 25 µA
5V ELECTRICAL CHARACTERISTICS 0
°
C
≤
TA
≤
70
°
C V + – S = 5V, VS = OV, Pin 5 open circuit, unless otherwise noted. LT1195C SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage J8, N8 Package 1.0 10.0 mV S8 Package 1.0 15.0 mV ∆VOS/∆T Input VOS Drift 15 µV/°C IOS Input Offset Current 0.2 1.7 µA IB Input Bias Current ±0.5 ±2.5 µA Input Voltage Range (Note 4) 2.0 3.5 V CMRR Common Mode Rejection Ratio VCM = 2V to 3.5V 60 85 dB VOUT Output Voltage Swing RL = 150Ω to Ground VOUT High 3.5 3.75 V VOUT Low 0.15 0.4 V IS Supply Current 12 16 mA Shutdown Supply Current Pin 5 at V– (Note 9) 0.9 2.0 mA IS/D Shutdown Pin Current Pin 5 at V– 5 25 µA
Note 1:
Absolute Maximum Ratings are those values beyond which the life
Note 6:
Full power bandwidth is calculated from the slew rate of a device may be impaired. measurement: FPBW = SR/2πVP.
Note 2:
A heat sink may be required to keep the junction temperature
Note 7:
Settling time measurement techniques are shown in “Take the below absolute maximum when the output is shorted continuously. Guesswork Out of Settling Time Measurements,” EDN, September 19, 1985.
Note 3:
TJ is calculated from the ambient temperature TA and power
Note 8:
NTSC (3.58MHz). For RL = 1k, Diff AV = 0.3%, Diff Ph = 0.35°. dissipation PD according to the following formats:
Note 9:
See Applications Information section for shutdown at elevated LT1195MJ8/LT1195CJ8: TJ = TA + (PD • 100°C/W) temperatures. Do not operate the shutdown above TJ > 125°C. LT1195N: TJ = TA + (PD • 100°C/W)
Note 10:
AC parameters are 100% tested on the ceramic and plastic DIP LT1195CS: T packaged parts (J8 and N8 suffix) and are sample tested on every lot of J = TA + (PD • 150°C/ W)
Note 4:
Exceeding the input common mode range may cause the output the SO packaged parts (S8 suffix). to invert.
Note 11:
Do not operate at AV < 2 for TA < 0°C.
Note 5:
Slew rate is measured between ±1V on the output, with ±3V input step. 1195fa 4