Datasheet LT1115 (Analog Devices) - 5
| 制造商 | Analog Devices |
| 描述 | Ultra-Low Noise, Low Distortion, Audio Op Amp |
| 页数 / 页 | 16 / 5 — TYPICAL PERFOR A CE CHARACTERISTICS. CCIF IMD Test (Twin Equal. Slew … |
| 文件格式/大小 | PDF / 252 Kb |
| 文件语言 | 英语 |
TYPICAL PERFOR A CE CHARACTERISTICS. CCIF IMD Test (Twin Equal. Slew Rate, Gain-Bandwidth-Product
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LT1115
W U TYPICAL PERFOR A CE CHARACTERISTICS CCIF IMD Test (Twin Equal CCIF IMD Test (Twin Equal Slew Rate, Gain-Bandwidth-Product Amplitude Tones at 13 and 14kHz)* Amplitude Tones at 13 and 14kHz)* vs Overcompensation Capacitor
0.1 0.1 100 10000 AV = 10 AV = 10 RL = 600 RL = 10k TA = 25°C TA = 25°C VS = ±18V VS = ±18V 0.010 0.010 s) 10 1000 GAIN AT 20kHz µ GWB SLEW 0.001 0.001 SLEW RATE (V/ 1 100 COC FROM PIN 5 TO PIN 6 VS = ±18V INTERMODULATION DISTORTION (at 1kHz) (%) INTERMODULATION DISTORTION (at 1kHz) (%) TA = 25°C 0.0001 0.0001 0.1 10 10m 0.1 1 10 10m 0.1 1 10 1 10 100 1000 10000 OUTPUT AMPLITUDE (V OVERCOMPENSATION CAPACITOR (pF) RMS) OUTPUT AMPLITUDE (VRMS) LT1115 • TPC10 LT1115 • TPC11 LT1115 • TPC12
Total Noise vs Unmatched Source Resistance Current Noise Spectrum Voltage Noise vs Temperature
100 100 2.0 R V S S = ±18V Hz) Hz) √ √ Hz) 1.6 √ 10 10 1.2 AT 10Hz AT 1kHz AT 10Hz TYPICAL 0.8 AT 1kHz RS NOISE ONLY 1 1.0 1/f CORNER = 250Hz 0.4 TOTAL NOISE DENSITY (nV/ CURRENT NOISE DENSITY (pA/ VS = ± 18V RMS VOLTAGE NOISE DENSITY (nV/ TA = 25°C 0.1 0.1 0 1 3 10 10 30 100 300 1k 3k 10k 100 1k 10k 0 15 30 45 60 75 UNMATCHED SOURCE RESISTANCE, R FREQUENCY (Hz) TEMPERATURE ( S (Ω) °C) LT1115 • TPC14 LT1115 • TPC15 LT1115 • TPC13
Output Short-Circuit Current Voltage Noise vs Supply Voltage Supply Current vs Temperature vs Time
1.5 10 50 T V A = 25°C S = ± 18V Hz) 9 VS = ±18V 40 √ 25°C 8 VS = ±15V 30 1.25 7 20 VS = ± 5V 6 10 5 0 1.0 AT 1kHz 4 – 10 SUPPLY CURRENT (mA) 3 – 20 0.75 25°C 2 SHORT-CIRCUIT CURRENT (mA) SINKING SOURCING – 30 RMS VOLTAGE NOISE DENSITY (nV/ 1 – 40 0.5 0 – 50 0 ± 5 ± 10 ± 15 ±20 0 15 30 45 60 75 0 1 2 3 SUPPLY VOLTAGE (V) TEMPERATURE (°C) TIME FROM OUTPUT SHORT TO GROUND (MINUTES) LT1115 • TPC17 LT1115 • TPC16 LT1115 • TPC18 *See CCIF Test Note at end of “Typical Performance Characteristics”. 1115fa 5
W U TYPICAL PERFOR A CE CHARACTERISTICS CCIF IMD Test (Twin Equal CCIF IMD Test (Twin Equal Slew Rate, Gain-Bandwidth-Product Amplitude Tones at 13 and 14kHz)* Amplitude Tones at 13 and 14kHz)* vs Overcompensation Capacitor
0.1 0.1 100 10000 AV = 10 AV = 10 RL = 600 RL = 10k TA = 25°C TA = 25°C VS = ±18V VS = ±18V 0.010 0.010 s) 10 1000 GAIN AT 20kHz µ GWB SLEW 0.001 0.001 SLEW RATE (V/ 1 100 COC FROM PIN 5 TO PIN 6 VS = ±18V INTERMODULATION DISTORTION (at 1kHz) (%) INTERMODULATION DISTORTION (at 1kHz) (%) TA = 25°C 0.0001 0.0001 0.1 10 10m 0.1 1 10 10m 0.1 1 10 1 10 100 1000 10000 OUTPUT AMPLITUDE (V OVERCOMPENSATION CAPACITOR (pF) RMS) OUTPUT AMPLITUDE (VRMS) LT1115 • TPC10 LT1115 • TPC11 LT1115 • TPC12
Total Noise vs Unmatched Source Resistance Current Noise Spectrum Voltage Noise vs Temperature
100 100 2.0 R V S S = ±18V Hz) Hz) √ √ Hz) 1.6 √ 10 10 1.2 AT 10Hz AT 1kHz AT 10Hz TYPICAL 0.8 AT 1kHz RS NOISE ONLY 1 1.0 1/f CORNER = 250Hz 0.4 TOTAL NOISE DENSITY (nV/ CURRENT NOISE DENSITY (pA/ VS = ± 18V RMS VOLTAGE NOISE DENSITY (nV/ TA = 25°C 0.1 0.1 0 1 3 10 10 30 100 300 1k 3k 10k 100 1k 10k 0 15 30 45 60 75 UNMATCHED SOURCE RESISTANCE, R FREQUENCY (Hz) TEMPERATURE ( S (Ω) °C) LT1115 • TPC14 LT1115 • TPC15 LT1115 • TPC13
Output Short-Circuit Current Voltage Noise vs Supply Voltage Supply Current vs Temperature vs Time
1.5 10 50 T V A = 25°C S = ± 18V Hz) 9 VS = ±18V 40 √ 25°C 8 VS = ±15V 30 1.25 7 20 VS = ± 5V 6 10 5 0 1.0 AT 1kHz 4 – 10 SUPPLY CURRENT (mA) 3 – 20 0.75 25°C 2 SHORT-CIRCUIT CURRENT (mA) SINKING SOURCING – 30 RMS VOLTAGE NOISE DENSITY (nV/ 1 – 40 0.5 0 – 50 0 ± 5 ± 10 ± 15 ±20 0 15 30 45 60 75 0 1 2 3 SUPPLY VOLTAGE (V) TEMPERATURE (°C) TIME FROM OUTPUT SHORT TO GROUND (MINUTES) LT1115 • TPC17 LT1115 • TPC16 LT1115 • TPC18 *See CCIF Test Note at end of “Typical Performance Characteristics”. 1115fa 5