Datasheet RH27C (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | Precision Operational Amplifier |
| 页数 / 页 | 6 / 3 — TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 10) |
| 文件格式/大小 | PDF / 88 Kb |
| 文件语言 | 英语 |
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 10)
该数据表的模型线
文件文字版本
RH27
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 10) 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Input Offset Voltage RH27E 1 55 80 100 150 200 μV RH27C 1 100 130 180 280 400 μV IOS Input Offset Current RH27E 35 40 50 60 90 nA RH27C 75 75 90 120 180 nA IB Input Bias Current RH27E ±40 ±50 ±80 ±100 ±200 nA RH27C ±80 ±80 ±125 ±200 ±400 nA Input Resistance RH27E 3 (Typ) 3 (Typ) 3 (Typ) 3 (Typ) 3 (Typ) GΩ Common Mode RH27C 2 (Typ) 2 (Typ) 2 (Typ) 2 (Typ) 2 (Typ) GΩ Input Voltage Range 4 ±11 ±11 ±11 ±11 ±11 V CMRR Common Mode VCM = ±11V (RH27E) 114 114 110 105 100 dB Rejection Ratio VCM = ±11V (RH27C) 100 100 97 94 90 dB PSRR Power Supply VS = ±4V to ±18V (RH27E) 100 100 98 96 94 dB Rejection Ratio VS = ±4V to ±18V (RH27C) 94 94 92 90 86 dB AVOL Large-Signal RL ≥ 2kΩ, VO = ±10V (RH27E) 1000 1000 1000 900 800 V/mV Voltage Gain RL ≥ 2kΩ, VO = ±10V (RH27C) 700 700 700 700 400 V/mV VOUT Maximum Output RL ≥ 2kΩ (RH27E) ±12 ±12 ±12 ±12 ±12 V Voltage Swing RL ≥ 600Ω (RH27E) ±10 ±10 ±10 ±10 ±10 V RL ≥ 2kΩ (RH27C) ±11.5 ±11.5 ±11.5 ±11.5 ±11.5 V RL ≥ 600Ω (RH27C) ±10 ±10 ±10 ±10 ±10 V ZO Open-Loop Output VO = 0, IO = 0 70 (Typ) 70 (Typ) 70 (Typ) 70 (Typ) 70 (Typ) Ω Resistance PD Power Dissipation RH27E 140 140 140 140 140 mW RH27C 170 170 170 170 170 mW
Note 1:
Input offset voltage measurements are performed by automatic
Note 6:
See test circuit for current noise measurement on OP-27/OP-37 test equipment approximately 0.5 seconds after application of power. data sheet.
Note 2:
Long-term input offset voltage stability refers to the averaged
Note 7:
The average input offset drift performance is within the trend line of offset voltage vs time over extended periods after the fi rst specifi cations unnulled or when nulled with a pot having a range 8kΩ to 30 days of operation. Excluding the initial hour of operation, changes 20kΩ. in VOS during the fi rst 30 days are typically 2.5μV. Refer to the typical
Note 8:
The RH27’s inputs are protected by back-to-back diodes. Current performance curve. limiting resistors are not used in order to achieve low noise. If differential
Note 3:
Sample tested to an LTPD of 15 on every lot. Contact factory for input voltage exceeds ±0.7V, the input current should be limited to 25mA. 100% testing of 10Hz voltage density noise.
Note 9:
VS = ±15V, VCM = 0V unless otherwise noted.
Note 4:
Parameter is guaranteed by design, characterization, or correlation
Note 10:
TA = 25°C, VS = ±15V, VCM = 0V, unless otherwise noted. to other tested parameters.
Note 11:
RH27AEW is marked and processed as RH27EW. Orders will be
Note 5:
See test circuit and frequency response curve for 0.1Hz to 10Hz delivered through box stock screening at 25°C, –55°C to 125°C to the VOS tester on OP-27/OP-37 data sheet. specifi cation shown on Table 1. rh27fd 3
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 10) 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Input Offset Voltage RH27E 1 55 80 100 150 200 μV RH27C 1 100 130 180 280 400 μV IOS Input Offset Current RH27E 35 40 50 60 90 nA RH27C 75 75 90 120 180 nA IB Input Bias Current RH27E ±40 ±50 ±80 ±100 ±200 nA RH27C ±80 ±80 ±125 ±200 ±400 nA Input Resistance RH27E 3 (Typ) 3 (Typ) 3 (Typ) 3 (Typ) 3 (Typ) GΩ Common Mode RH27C 2 (Typ) 2 (Typ) 2 (Typ) 2 (Typ) 2 (Typ) GΩ Input Voltage Range 4 ±11 ±11 ±11 ±11 ±11 V CMRR Common Mode VCM = ±11V (RH27E) 114 114 110 105 100 dB Rejection Ratio VCM = ±11V (RH27C) 100 100 97 94 90 dB PSRR Power Supply VS = ±4V to ±18V (RH27E) 100 100 98 96 94 dB Rejection Ratio VS = ±4V to ±18V (RH27C) 94 94 92 90 86 dB AVOL Large-Signal RL ≥ 2kΩ, VO = ±10V (RH27E) 1000 1000 1000 900 800 V/mV Voltage Gain RL ≥ 2kΩ, VO = ±10V (RH27C) 700 700 700 700 400 V/mV VOUT Maximum Output RL ≥ 2kΩ (RH27E) ±12 ±12 ±12 ±12 ±12 V Voltage Swing RL ≥ 600Ω (RH27E) ±10 ±10 ±10 ±10 ±10 V RL ≥ 2kΩ (RH27C) ±11.5 ±11.5 ±11.5 ±11.5 ±11.5 V RL ≥ 600Ω (RH27C) ±10 ±10 ±10 ±10 ±10 V ZO Open-Loop Output VO = 0, IO = 0 70 (Typ) 70 (Typ) 70 (Typ) 70 (Typ) 70 (Typ) Ω Resistance PD Power Dissipation RH27E 140 140 140 140 140 mW RH27C 170 170 170 170 170 mW
Note 1:
Input offset voltage measurements are performed by automatic
Note 6:
See test circuit for current noise measurement on OP-27/OP-37 test equipment approximately 0.5 seconds after application of power. data sheet.
Note 2:
Long-term input offset voltage stability refers to the averaged
Note 7:
The average input offset drift performance is within the trend line of offset voltage vs time over extended periods after the fi rst specifi cations unnulled or when nulled with a pot having a range 8kΩ to 30 days of operation. Excluding the initial hour of operation, changes 20kΩ. in VOS during the fi rst 30 days are typically 2.5μV. Refer to the typical
Note 8:
The RH27’s inputs are protected by back-to-back diodes. Current performance curve. limiting resistors are not used in order to achieve low noise. If differential
Note 3:
Sample tested to an LTPD of 15 on every lot. Contact factory for input voltage exceeds ±0.7V, the input current should be limited to 25mA. 100% testing of 10Hz voltage density noise.
Note 9:
VS = ±15V, VCM = 0V unless otherwise noted.
Note 4:
Parameter is guaranteed by design, characterization, or correlation
Note 10:
TA = 25°C, VS = ±15V, VCM = 0V, unless otherwise noted. to other tested parameters.
Note 11:
RH27AEW is marked and processed as RH27EW. Orders will be
Note 5:
See test circuit and frequency response curve for 0.1Hz to 10Hz delivered through box stock screening at 25°C, –55°C to 125°C to the VOS tester on OP-27/OP-37 data sheet. specifi cation shown on Table 1. rh27fd 3