Datasheet RH1499M (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | 10MHz, 6V/µs, Quad Rail-to-Rail Input and Output Precision C-Load Op Amp |
| 页数 / 页 | 8 / 3 — TABLE 1A: ELECTRICAL CHARACTERISTICS. (Postirradiation) VS = ±15V, VCM = … |
| 文件格式/大小 | PDF / 181 Kb |
| 文件语言 | 英语 |
TABLE 1A: ELECTRICAL CHARACTERISTICS. (Postirradiation) VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted. 10Krad (Si)
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RH1499M
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted. 10Krad (Si) 20Krad (Si) 50Krad (Si) 100Krad (Si) 200Krad (Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Input Offset Voltage VCM = V+, V– 950 950 950 950 950 µV IB Input Bias Current VCM = V+, V– 765 815 865 915 965 nA IOS Input Offset Current VCM = V+, V– 100 100 100 100 100 nA Input Voltage Range V– V+ V– V+ V– V+ V– V+ V– V+ V AVOL Large-Signal Voltage VO = –14.5V to 14.5V, 500 500 500 500 500 V/mV Gain RL = 10k VO = –10V to 10V, 250 250 250 250 250 V/mV RL = 2k CMRR Common Mode VCM = V+ to V– 86 86 86 86 86 dB Rejection Ratio CMRR Match VCM = V+ to V– 3 83 83 83 83 83 dB (Channel-to-Channel) PSRR Power Supply VS = ±2V to ±16V 90 90 90 90 90 dB Rejection Ratio PSRR Match VS = ±2V to ±16V 3 83 83 83 83 83 dB (Channel-to-Channel) VOUT Output Voltage No Load 60 60 60 60 60 mV Swing Low ISINK = 1mA 4 100 100 100 100 100 mV ISINK = 10mA 500 500 500 500 500 mV Output Voltage No Load 20 20 20 20 20 mV Swing High ISOURCE = 1mA 4 150 150 150 150 150 mV ISOURCE = 10mA 800 800 800 800 800 mV ISC Short-Circuit Current ±10 ±10 ±10 ±10 ±10 mA IS Supply Current 2.5 2.5 2.5 2.5 2.5 mA GBW Gain-Bandwidth f = 100kHz 4.5 4.5 4.5 4.5 4.5 MHz Product SR Slew Rate AV = –1, RL = 10k, 3 3 3 3 3 V/µs VO = ±10V, Measure at VO = ±5V
TABLE 2: ELECTRICAL CHARACTERISTICS (Preirradiation) VS = 5V; VCM = VOUT = half supply, unless otherwise noted. TA = 25°C SUB- –55°C ≤ TA ≤ 125°C SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS
VOS Input Offset Voltage VCM = V+, V– 150 800 µV VCM = V+ – 0.5V, V– + 0.5V 1 300 1100 2, 3 µV Input Offset Voltage Match VCM = V+ to V– 3 200 1400 µV (Channel-to-Channel) VCM = V+ – 0.5V, V– + 0.5V 350 1800 µV (Note 3) IB Input Bias Current VCM = V+ 0 250 650 nA VCM = V+ – 0.5V 1 0 450 1100 2, 3 nA VCM = V– –650 –250 0 nA VCM = V– + 0.5V –1100 –450 0 nA Input Bias Current Match VCM = V+, V– 0 10 180 nA (Channel-to-Channel) VCM = V+ – 0.5V, V– + 0.5V 3 0 30 400 nA (Note 3) rh1499mfg For more information www.linear.com/RH1499M 3 Document Outline Description Absolute Maximum Ratings Burn-In Circuit Package Information Table 1: Electrical Characteristics Table 1A: Electrical Characteristics Table 2: Electrical Characteristics Table 2A: Electrical Characteristics Table 2: Electrical Test Requirements Total Dose Bias Circuit Typical Performance Characteristics
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted. 10Krad (Si) 20Krad (Si) 50Krad (Si) 100Krad (Si) 200Krad (Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Input Offset Voltage VCM = V+, V– 950 950 950 950 950 µV IB Input Bias Current VCM = V+, V– 765 815 865 915 965 nA IOS Input Offset Current VCM = V+, V– 100 100 100 100 100 nA Input Voltage Range V– V+ V– V+ V– V+ V– V+ V– V+ V AVOL Large-Signal Voltage VO = –14.5V to 14.5V, 500 500 500 500 500 V/mV Gain RL = 10k VO = –10V to 10V, 250 250 250 250 250 V/mV RL = 2k CMRR Common Mode VCM = V+ to V– 86 86 86 86 86 dB Rejection Ratio CMRR Match VCM = V+ to V– 3 83 83 83 83 83 dB (Channel-to-Channel) PSRR Power Supply VS = ±2V to ±16V 90 90 90 90 90 dB Rejection Ratio PSRR Match VS = ±2V to ±16V 3 83 83 83 83 83 dB (Channel-to-Channel) VOUT Output Voltage No Load 60 60 60 60 60 mV Swing Low ISINK = 1mA 4 100 100 100 100 100 mV ISINK = 10mA 500 500 500 500 500 mV Output Voltage No Load 20 20 20 20 20 mV Swing High ISOURCE = 1mA 4 150 150 150 150 150 mV ISOURCE = 10mA 800 800 800 800 800 mV ISC Short-Circuit Current ±10 ±10 ±10 ±10 ±10 mA IS Supply Current 2.5 2.5 2.5 2.5 2.5 mA GBW Gain-Bandwidth f = 100kHz 4.5 4.5 4.5 4.5 4.5 MHz Product SR Slew Rate AV = –1, RL = 10k, 3 3 3 3 3 V/µs VO = ±10V, Measure at VO = ±5V
TABLE 2: ELECTRICAL CHARACTERISTICS (Preirradiation) VS = 5V; VCM = VOUT = half supply, unless otherwise noted. TA = 25°C SUB- –55°C ≤ TA ≤ 125°C SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS
VOS Input Offset Voltage VCM = V+, V– 150 800 µV VCM = V+ – 0.5V, V– + 0.5V 1 300 1100 2, 3 µV Input Offset Voltage Match VCM = V+ to V– 3 200 1400 µV (Channel-to-Channel) VCM = V+ – 0.5V, V– + 0.5V 350 1800 µV (Note 3) IB Input Bias Current VCM = V+ 0 250 650 nA VCM = V+ – 0.5V 1 0 450 1100 2, 3 nA VCM = V– –650 –250 0 nA VCM = V– + 0.5V –1100 –450 0 nA Input Bias Current Match VCM = V+, V– 0 10 180 nA (Channel-to-Channel) VCM = V+ – 0.5V, V– + 0.5V 3 0 30 400 nA (Note 3) rh1499mfg For more information www.linear.com/RH1499M 3 Document Outline Description Absolute Maximum Ratings Burn-In Circuit Package Information Table 1: Electrical Characteristics Table 1A: Electrical Characteristics Table 2: Electrical Characteristics Table 2A: Electrical Characteristics Table 2: Electrical Test Requirements Total Dose Bias Circuit Typical Performance Characteristics