Datasheet RH108A (Analog Devices) - 2
| 制造商 | Analog Devices |
| 描述 | Operational Amplifier |
| 页数 / 页 | 4 / 2 — TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation, Note 4). TA = 25°C. … |
| 文件格式/大小 | PDF / 71 Kb |
| 文件语言 | 英语 |
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation, Note 4). TA = 25°C. SUB-. –55°C ≤ TA ≤ 125°C. SYMBOL PARAMETER. CONDITIONS
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RH108A
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation, Note 4) TA = 25°C SUB- –55°C ≤ TA ≤ 125°C SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS
VOS Input Offset Voltage 0.5 1 1.0 2,3 mV ΔVOS Average Tempco of Offset 3 5.0 μV/°C ΔTemp Voltage IOS Input Offset Current 0.2 1 0.4 2,3 nA ΔIS Average Tempco of Offset 3 2.5 pA/°C ΔTemp Current IB Input Bias Current 2.0 1 3.0 2,3 nA AVOL Large-Signal Voltage Gain VS = ±15V, VOUT = ±10V 80 4 40 5,6 V/mV RL ≥ 10k CMRR Common Mode Rejection Ratio 96 1 96 2,3 dB PSRR Power Supply Rejection Ratio 96 1 96 2,3 dB Input Voltage Range VS = ±15V 3 ±13.5 ±13.5 V VOUT Output Voltage Swing VS = ±15V, RL = 10k ±13 4 ±13 5,6 V RIN Input Resistance 3 30 MΩ IS Supply Current (Note 6) 0.6 1 0.4 2 mA
TABLE 1A: ELECTRICAL CHARACTERISTICS (Preirradiation, Note 4) 10KRAD (Si) 20KRAD (Si) 50KRAD (Si) 80KRAD (Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Input Offset Voltage 0.5 0.5 0.5 1.0 mV IOS Input Offset Current 0.3 0.3 0.3 0.3 nA IB Input Bias Current ±2.0 ±2.0 ±2.0 ±4.0 nA AVOL Large-Signal Voltage Gain VS = ±15V, VOUT = ±10V 98 98 90 86 dB RL ≥ 10k CMRR Common Mode Rejection Ratio 96 96 84 70 dB PSRR Power Supply Rejection Ratio 4 96 96 84 70 dB Input Voltage Range 3 ±13.5 ±13.5 ±13.5 ±13.5 V VOUT Output Voltage Swing ±13 ±13 ±13 ±13 V RIN Input Resistance 3 30 30 30 30 MΩ IS Supply Current 0.6 0.6 0.6 0.6 mA
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 3:
Guaranteed by design, characterization or correlation to may cause permanent damage to the device. Exposure to any Absolute othertested parameters. Maximum Rating condition for extended periods may affect device
Note 4:
±5V ≤ VS ≤ ±20V preirradiation, ±5V ≤ VS ≤ ±15V postirradiation, reliability and lifetime. unless otherwise noted.
Note 2:
For supply voltages less than ±15V, the maximum input voltage
Note 5:
VS = ±15V, VCM = 0V, TA = 25°C unless otherwise noted. isequal to the supply voltage.
Note 6:
25°C ≤ TA ≤ 125°C. rh108afc 2
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation, Note 4) TA = 25°C SUB- –55°C ≤ TA ≤ 125°C SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS
VOS Input Offset Voltage 0.5 1 1.0 2,3 mV ΔVOS Average Tempco of Offset 3 5.0 μV/°C ΔTemp Voltage IOS Input Offset Current 0.2 1 0.4 2,3 nA ΔIS Average Tempco of Offset 3 2.5 pA/°C ΔTemp Current IB Input Bias Current 2.0 1 3.0 2,3 nA AVOL Large-Signal Voltage Gain VS = ±15V, VOUT = ±10V 80 4 40 5,6 V/mV RL ≥ 10k CMRR Common Mode Rejection Ratio 96 1 96 2,3 dB PSRR Power Supply Rejection Ratio 96 1 96 2,3 dB Input Voltage Range VS = ±15V 3 ±13.5 ±13.5 V VOUT Output Voltage Swing VS = ±15V, RL = 10k ±13 4 ±13 5,6 V RIN Input Resistance 3 30 MΩ IS Supply Current (Note 6) 0.6 1 0.4 2 mA
TABLE 1A: ELECTRICAL CHARACTERISTICS (Preirradiation, Note 4) 10KRAD (Si) 20KRAD (Si) 50KRAD (Si) 80KRAD (Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Input Offset Voltage 0.5 0.5 0.5 1.0 mV IOS Input Offset Current 0.3 0.3 0.3 0.3 nA IB Input Bias Current ±2.0 ±2.0 ±2.0 ±4.0 nA AVOL Large-Signal Voltage Gain VS = ±15V, VOUT = ±10V 98 98 90 86 dB RL ≥ 10k CMRR Common Mode Rejection Ratio 96 96 84 70 dB PSRR Power Supply Rejection Ratio 4 96 96 84 70 dB Input Voltage Range 3 ±13.5 ±13.5 ±13.5 ±13.5 V VOUT Output Voltage Swing ±13 ±13 ±13 ±13 V RIN Input Resistance 3 30 30 30 30 MΩ IS Supply Current 0.6 0.6 0.6 0.6 mA
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 3:
Guaranteed by design, characterization or correlation to may cause permanent damage to the device. Exposure to any Absolute othertested parameters. Maximum Rating condition for extended periods may affect device
Note 4:
±5V ≤ VS ≤ ±20V preirradiation, ±5V ≤ VS ≤ ±15V postirradiation, reliability and lifetime. unless otherwise noted.
Note 2:
For supply voltages less than ±15V, the maximum input voltage
Note 5:
VS = ±15V, VCM = 0V, TA = 25°C unless otherwise noted. isequal to the supply voltage.
Note 6:
25°C ≤ TA ≤ 125°C. rh108afc 2