Datasheet LTC1702A (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | Dual 550kHz Synchronous 2-Phase Switching Regulator Controller |
| 页数 / 页 | 36 / 3 — ELECTRICAL CHARACTERISTICS The |
| 文件格式/大小 | PDF / 427 Kb |
| 文件语言 | 英语 |
ELECTRICAL CHARACTERISTICS The
该数据表的模型线
文件文字版本
LTC1702A
ELECTRICAL CHARACTERISTICS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are TA = 25
°
C. VCC = 5V unless otherwise specified. (Note 3) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VFCB FCB Threshold ● 0.75 0.8 0.85 V ∆VFCB FCB Feedback Hysteresis 20 mV IFCB FCB Pin Current ● ±0.001 ±1 µA VRUN RUN/SS Pin RUN Threshold ● 0.45 0.55 0.65 V ISS Soft-Start Source Current RUN/SSn = 0V – 2 – 3.5 – 6 µA Maximum Soft-Start Sink Current VIMAX = 0V, VSW = – 0.5V 1 mA IMAX IMAX Source Current VIMAX = 0V ● –12 –10 – 8 µA
Switching Characteristics
fOSC Oscillator Frequency Test Circuit 1, CL = 0pF ● 475 550 750 kHz ΦOSC2 Converter 2 Oscillator Phase Relative to Converter 1 (Note 6) 180 DEG DCMIN Minimum Duty Cycle ● 0 % DCMAX Maximum Duty Cycle ● 87 90 93 % tNOV Driver Nonoverlap Test Circuit 1, CL = 2000pF (Note 7) ● 40 100 ns tr, tf Driver Rise/Fall Time Test Circuit 1, CL = 2000pF (Note 7) ● 12 80 ns
Feedback Amplifier
AVFB FB DC Gain ● 74 85 dB GBW FB Gain Bandwidth 25 MHz IERR FB Sink/Source Current ● ±3 ±10 mA
Status Outputs
VPGOOD PGOOD Trip Point VFB Relative to Regulated VOUT ● –10 – 5 – 2 % VOLPG PGOOD Output Low Voltage PGOOD = 1mA ● 0.03 0.1 V IPGOOD PGOOD Output Leakage ● ±0.1 ±1 µA tPGOOD PGOOD Delay Time VFB < VPGOOD to PGOOD (Note 7) 100 µs VFAULT FAULT Trip Point VFB Relative to Regulated VOUT ● 10 15 20 % VOLF FAULT Output Low Voltage IFAULT = 1mA ● 0.03 0.1 V IFAULT FAULT Output Current VFAULT = 0V –10 µA tFAULT FAULT Delay Time VFB > VFAULT to FAULT (Note 7) 25 µs
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 4:
Supply current in normal operation is dominated by the current may cause permanent damage to the device. Exposure to any Absolute needed to charge and discharge the external MOSFET gates. This current Maximum Rating condition for extended periods may affect device will vary with supply voltage and the external MOSFETs used. reliability and lifetime.
Note 5:
Supply current in shutdown is dominated by external MOSFET
Note 2:
PVCC and BVCC (VBOOST – VSW) must be greater than VGS(ON) of leakage and may be significantly higher than the quiescent current drawn the external MOSFETs used to ensure proper operation. by the LTC1702A, especially at elevated temperature.
Note 3:
All currents into device pins are positive; all currents out of device
Note 6:
This parameter is guaranteed by correlation and is not tested pins are negative. All voltages are referenced to ground unless otherwise directly. specified.
Note 7:
Rise and fall times are measured using 10% and 90% levels. Delay and nonoverlap times are measured using 50% levels. 1702afa 3
ELECTRICAL CHARACTERISTICS The
●
denotes specifications which apply over the full operating temperature range, otherwise specifications are TA = 25
°
C. VCC = 5V unless otherwise specified. (Note 3) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VFCB FCB Threshold ● 0.75 0.8 0.85 V ∆VFCB FCB Feedback Hysteresis 20 mV IFCB FCB Pin Current ● ±0.001 ±1 µA VRUN RUN/SS Pin RUN Threshold ● 0.45 0.55 0.65 V ISS Soft-Start Source Current RUN/SSn = 0V – 2 – 3.5 – 6 µA Maximum Soft-Start Sink Current VIMAX = 0V, VSW = – 0.5V 1 mA IMAX IMAX Source Current VIMAX = 0V ● –12 –10 – 8 µA
Switching Characteristics
fOSC Oscillator Frequency Test Circuit 1, CL = 0pF ● 475 550 750 kHz ΦOSC2 Converter 2 Oscillator Phase Relative to Converter 1 (Note 6) 180 DEG DCMIN Minimum Duty Cycle ● 0 % DCMAX Maximum Duty Cycle ● 87 90 93 % tNOV Driver Nonoverlap Test Circuit 1, CL = 2000pF (Note 7) ● 40 100 ns tr, tf Driver Rise/Fall Time Test Circuit 1, CL = 2000pF (Note 7) ● 12 80 ns
Feedback Amplifier
AVFB FB DC Gain ● 74 85 dB GBW FB Gain Bandwidth 25 MHz IERR FB Sink/Source Current ● ±3 ±10 mA
Status Outputs
VPGOOD PGOOD Trip Point VFB Relative to Regulated VOUT ● –10 – 5 – 2 % VOLPG PGOOD Output Low Voltage PGOOD = 1mA ● 0.03 0.1 V IPGOOD PGOOD Output Leakage ● ±0.1 ±1 µA tPGOOD PGOOD Delay Time VFB < VPGOOD to PGOOD (Note 7) 100 µs VFAULT FAULT Trip Point VFB Relative to Regulated VOUT ● 10 15 20 % VOLF FAULT Output Low Voltage IFAULT = 1mA ● 0.03 0.1 V IFAULT FAULT Output Current VFAULT = 0V –10 µA tFAULT FAULT Delay Time VFB > VFAULT to FAULT (Note 7) 25 µs
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 4:
Supply current in normal operation is dominated by the current may cause permanent damage to the device. Exposure to any Absolute needed to charge and discharge the external MOSFET gates. This current Maximum Rating condition for extended periods may affect device will vary with supply voltage and the external MOSFETs used. reliability and lifetime.
Note 5:
Supply current in shutdown is dominated by external MOSFET
Note 2:
PVCC and BVCC (VBOOST – VSW) must be greater than VGS(ON) of leakage and may be significantly higher than the quiescent current drawn the external MOSFETs used to ensure proper operation. by the LTC1702A, especially at elevated temperature.
Note 3:
All currents into device pins are positive; all currents out of device
Note 6:
This parameter is guaranteed by correlation and is not tested pins are negative. All voltages are referenced to ground unless otherwise directly. specified.
Note 7:
Rise and fall times are measured using 10% and 90% levels. Delay and nonoverlap times are measured using 50% levels. 1702afa 3