Datasheet BD136G, BD138G, BD140G (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | Plastic Medium-Power Silicon PNP Transistors |
| 页数 / 页 | 4 / 2 — BD136G, BD138G, BD140G. ELECTRICAL CHARACTERISTICS. Characteristic. … |
| 修订版 | 16 |
| 文件格式/大小 | PDF / 83 Kb |
| 文件语言 | 英语 |
BD136G, BD138G, BD140G. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. Unit. TYPICAL CHARACTERISTICS
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BD138
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BD136G, BD138G, BD140G ELECTRICAL CHARACTERISTICS
(TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
Collector−Emitter Sustaining Voltage (Note 1) BVCEO Vdc (IC = 0.03 Adc, IB = 0) BD136G 45 − BD138G 60 − BD140G 80 − Collector Cutoff Current ICBO mAdc (VCB = 30 Vdc, IE = 0) − 0.1 (VCB = 30 Vdc, IE = 0, TC = 125 _C) − 10 Emitter Cutoff Current IEBO mAdc (VBE = 5.0 Vdc, IC = 0) − 10 DC Current Gain hFE* − (IC = 0.005 A, VCE = 2 V) 25 − (IC = 0.15 A, VCE = 2 V) 40 250 (IC = 0.5 A, VCE = 2 V) 25 − Collector−Emitter Saturation Voltage (Note 1) VCE(sat)* Vdc (IC = 0.5 Adc, IB = 0.05 Adc) − 0.5 Base−Emitter On Voltage (Note 1) VBE(on)* Vdc (IC = 0.5 Adc, VCE = 2.0 Vdc) − 1 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
1000 0.5 VCE = 2 V IC/IB = 10 −55°C 150°C 0.4 25°C AGE (V) T OR−EMITTER 0.3 −55°C 25°C 150°C 100 0.2 TION VOL , DC CURRENT GAIN , COLLECT FE TURA h 0.1 SA CE(sat)V 10 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage http://onsemi.com 2
BD136G, BD138G, BD140G ELECTRICAL CHARACTERISTICS
(TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
Collector−Emitter Sustaining Voltage (Note 1) BVCEO Vdc (IC = 0.03 Adc, IB = 0) BD136G 45 − BD138G 60 − BD140G 80 − Collector Cutoff Current ICBO mAdc (VCB = 30 Vdc, IE = 0) − 0.1 (VCB = 30 Vdc, IE = 0, TC = 125 _C) − 10 Emitter Cutoff Current IEBO mAdc (VBE = 5.0 Vdc, IC = 0) − 10 DC Current Gain hFE* − (IC = 0.005 A, VCE = 2 V) 25 − (IC = 0.15 A, VCE = 2 V) 40 250 (IC = 0.5 A, VCE = 2 V) 25 − Collector−Emitter Saturation Voltage (Note 1) VCE(sat)* Vdc (IC = 0.5 Adc, IB = 0.05 Adc) − 0.5 Base−Emitter On Voltage (Note 1) VBE(on)* Vdc (IC = 0.5 Adc, VCE = 2.0 Vdc) − 1 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
1000 0.5 VCE = 2 V IC/IB = 10 −55°C 150°C 0.4 25°C AGE (V) T OR−EMITTER 0.3 −55°C 25°C 150°C 100 0.2 TION VOL , DC CURRENT GAIN , COLLECT FE TURA h 0.1 SA CE(sat)V 10 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage http://onsemi.com 2