Datasheet BD135G, BD137G, BD139G (ON Semiconductor)
| 制造商 | ON Semiconductor |
| 描述 | Plastic Medium-Power Silicon NPN Transistors |
| 页数 / 页 | 4 / 1 — http://onsemi.com. Features. 1.5 A POWER TRANSISTORS. NPN SILICON. 45, … |
| 修订版 | 17 |
| 文件格式/大小 | PDF / 82 Kb |
| 文件语言 | 英语 |
http://onsemi.com. Features. 1.5 A POWER TRANSISTORS. NPN SILICON. 45, 60, 80 V, 12.5 W. MAXIMUM RATINGS. Rating. Symbol. Value. Unit
该数据表的模型线
文件文字版本
BD135G, BD137G, BD139G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
http://onsemi.com Features
• High DC Current Gain
1.5 A POWER TRANSISTORS
• BD 135, 137, 139 are complementary with BD 136, 138, 140
NPN SILICON
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
45, 60, 80 V, 12.5 W
Compliant* COLLECTOR 2, 4
MAXIMUM RATINGS Rating Symbol Value Unit
3 Collector−Emitter Voltage VCEO Vdc BASE BD135G 45 BD137G 60 BD139G 80 1 EMITTER Collector−Base Voltage VCBO Vdc BD135G 45 BD137G 60 BD139G 100 Emitter−Base Voltage VEBO 5.0 Vdc
TO−225
Collector Current I
CASE 77−09
C 1.5 Adc
STYLE 1
Base Current IB 0.5 Adc Total Device Dissipation P 1 D 2 3 @ TA = 25°C 1.25 Watts Derate above 25°C 10 mW/°C
MARKING DIAGRAM
Total Device Dissipation PD @ TC = 25°C 12.5 Watts Derate above 25°C 100 mW/°C YWW Operating and Storage Junction TJ, Tstg – 55 to + 150 °C Temperature Range BD1xxG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Y = Year assumed, damage may occur and reliability may be affected. WW = Work Week BD1xx = Device Code
THERMAL CHARACTERISTICS
xx = 35, 37, 39
Characteristic Symbol Max Unit
G = Pb−Free Package Thermal Resistance, Junction−to−Case RqJC 10 °C/W
ORDERING INFORMATION
Thermal Resistance, Junction−to−Ambient RqJA 100 °C/W
Device Package Shipping
BD135G TO−225 500 Units / Box (Pb−Free) BD135TG TO−225 50 Units / Rail (Pb−Free) BD137G TO−225 500 Units / Box (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please BD139G TO−225 500 Units / Box download the ON Semiconductor Soldering and Mounting Techniques (Pb−Free) Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
December, 2013 − Rev. 17 BD135/D
http://onsemi.com Features
• High DC Current Gain
1.5 A POWER TRANSISTORS
• BD 135, 137, 139 are complementary with BD 136, 138, 140
NPN SILICON
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
45, 60, 80 V, 12.5 W
Compliant* COLLECTOR 2, 4
MAXIMUM RATINGS Rating Symbol Value Unit
3 Collector−Emitter Voltage VCEO Vdc BASE BD135G 45 BD137G 60 BD139G 80 1 EMITTER Collector−Base Voltage VCBO Vdc BD135G 45 BD137G 60 BD139G 100 Emitter−Base Voltage VEBO 5.0 Vdc
TO−225
Collector Current I
CASE 77−09
C 1.5 Adc
STYLE 1
Base Current IB 0.5 Adc Total Device Dissipation P 1 D 2 3 @ TA = 25°C 1.25 Watts Derate above 25°C 10 mW/°C
MARKING DIAGRAM
Total Device Dissipation PD @ TC = 25°C 12.5 Watts Derate above 25°C 100 mW/°C YWW Operating and Storage Junction TJ, Tstg – 55 to + 150 °C Temperature Range BD1xxG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Y = Year assumed, damage may occur and reliability may be affected. WW = Work Week BD1xx = Device Code
THERMAL CHARACTERISTICS
xx = 35, 37, 39
Characteristic Symbol Max Unit
G = Pb−Free Package Thermal Resistance, Junction−to−Case RqJC 10 °C/W
ORDERING INFORMATION
Thermal Resistance, Junction−to−Ambient RqJA 100 °C/W
Device Package Shipping
BD135G TO−225 500 Units / Box (Pb−Free) BD135TG TO−225 50 Units / Rail (Pb−Free) BD137G TO−225 500 Units / Box (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please BD139G TO−225 500 Units / Box download the ON Semiconductor Soldering and Mounting Techniques (Pb−Free) Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
December, 2013 − Rev. 17 BD135/D