Datasheet 4N35, 4N36, 4N37 (Vishay) - 2
| 制造商 | Vishay |
| 描述 | Optocoupler, Phototransistor Output, with Base Connection |
| 页数 / 页 | 7 / 2 — 4N35, 4N36, 4N37. ABSOLUTE MAXIMUM RATINGS (1). PARAMETER. TEST … |
| 修订版 | 1.2 |
| 文件格式/大小 | PDF / 133 Kb |
| 文件语言 | 英语 |
4N35, 4N36, 4N37. ABSOLUTE MAXIMUM RATINGS (1). PARAMETER. TEST CONDITION. SYMBOL. VALUE. UNIT. COUPLER. Notes
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4N35, 4N36, 4N37
Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection
ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER
Comparative tracking index DIN IEC 112/VDE 0303, part 1 175 VIO = 500 V, Tamb = 25 °C RIO 1012 Ω Isolation resistance VIO = 500 V, Tamb = 100 °C RIO 1011 Ω Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Junction temperature Tj 100 °C max.10 s dip soldering: Soldering temperature (2) distance to seating plane Tsld 260 °C ≥ 1.5 mm
Notes
(1) Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering condditions for through hole devices (DIP).
ELECTRICAL CHARACTERISTICS (1) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT
Junction capacitance VR = 0 V, f = 1 MHz Cj 50 pF IF = 10 mA VF 1.3 1.5 V Forward voltage (2) IF = 10 mA, Tamb = - 55 °C VF 0.9 1.3 1.7 V Reverse current (2) VR = 6 V IR 0.1 10 μA Capacitance VR = 0 V, f = 1 MHz CO 25 pF
OUTPUT
4N35 BVCEO 30 V Collector emitter breakdown 4N36 BV voltage(2) IC = 1 mA CEO 30 V 4N37 BVCEO 30 V Emitter collector breakdown voltage(2) IE = 100 μA BVECO 7 V
OUTPUT
4N35 BVCBO 70 V Collector base breakdown 4N36 BV voltage (2) IC = 100 μA, IB = 1 μA CBO 70 V 4N37 BVCBO 70 V 4N35 ICEO 5 50 nA VCE = 10 V, IF = 0 4N36 ICEO 5 50 nA VCE = 10 V, IF = 0 4N37 ICEO 5 50 nA Collector emitter leakage current (2) 4N35 ICEO 500 μA VCE = 30 V, IF = 0, 4N36 I T CEO 500 μA amb = 100 °C 4N37 ICEO 500 μA Collector emitter capacitance VCE = 0 CCE 6 pF
COUPLER
Resistance, input output (2) VIO = 500 V RIO 1011 Ω Capacitance, input output f = 1 MHz CIO 0.6 pF
Notes
(1) Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. (2) Indicates JEDEC registered value. www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 81181 154 Rev. 1.2, 07-Jan-10
Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection
ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER
Comparative tracking index DIN IEC 112/VDE 0303, part 1 175 VIO = 500 V, Tamb = 25 °C RIO 1012 Ω Isolation resistance VIO = 500 V, Tamb = 100 °C RIO 1011 Ω Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Junction temperature Tj 100 °C max.10 s dip soldering: Soldering temperature (2) distance to seating plane Tsld 260 °C ≥ 1.5 mm
Notes
(1) Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering condditions for through hole devices (DIP).
ELECTRICAL CHARACTERISTICS (1) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT
Junction capacitance VR = 0 V, f = 1 MHz Cj 50 pF IF = 10 mA VF 1.3 1.5 V Forward voltage (2) IF = 10 mA, Tamb = - 55 °C VF 0.9 1.3 1.7 V Reverse current (2) VR = 6 V IR 0.1 10 μA Capacitance VR = 0 V, f = 1 MHz CO 25 pF
OUTPUT
4N35 BVCEO 30 V Collector emitter breakdown 4N36 BV voltage(2) IC = 1 mA CEO 30 V 4N37 BVCEO 30 V Emitter collector breakdown voltage(2) IE = 100 μA BVECO 7 V
OUTPUT
4N35 BVCBO 70 V Collector base breakdown 4N36 BV voltage (2) IC = 100 μA, IB = 1 μA CBO 70 V 4N37 BVCBO 70 V 4N35 ICEO 5 50 nA VCE = 10 V, IF = 0 4N36 ICEO 5 50 nA VCE = 10 V, IF = 0 4N37 ICEO 5 50 nA Collector emitter leakage current (2) 4N35 ICEO 500 μA VCE = 30 V, IF = 0, 4N36 I T CEO 500 μA amb = 100 °C 4N37 ICEO 500 μA Collector emitter capacitance VCE = 0 CCE 6 pF
COUPLER
Resistance, input output (2) VIO = 500 V RIO 1011 Ω Capacitance, input output f = 1 MHz CIO 0.6 pF
Notes
(1) Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. (2) Indicates JEDEC registered value. www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 81181 154 Rev. 1.2, 07-Jan-10