Datasheet IRF820, SiHF820 (Vishay) - 6
| 制造商 | Vishay |
| 描述 | Power MOSFET |
| 页数 / 页 | 9 / 6 — IRF820, SiHF820. Fig. 12c - Maximum Avalanche Energy vs. Drain Current. … |
| 修订版 | C |
| 文件格式/大小 | PDF / 283 Kb |
| 文件语言 | 英语 |
IRF820, SiHF820. Fig. 12c - Maximum Avalanche Energy vs. Drain Current. Fig. 13a - Basic Gate Charge Waveform
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IRF820, SiHF820
Vishay Siliconix 500 ID Top 1.1 A 400 1.6 A Bottom 2.5 A 300 200 , Single Pulse Energy (mJ) 100 ASE V = 50 V DD 0 25 50 75 100 125 150 91059_12c Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. Q 50 kΩ G 10 V 12 V 0.2 µF 0.3 µF Q Q GS GD + V D.U.T. DS - VG VGS 3 mA Charge I I G D Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test
www.vishay.com Document Number: 91059 6 S11-0507-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Vishay Siliconix 500 ID Top 1.1 A 400 1.6 A Bottom 2.5 A 300 200 , Single Pulse Energy (mJ) 100 ASE V = 50 V DD 0 25 50 75 100 125 150 91059_12c Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. Q 50 kΩ G 10 V 12 V 0.2 µF 0.3 µF Q Q GS GD + V D.U.T. DS - VG VGS 3 mA Charge I I G D Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test
www.vishay.com Document Number: 91059 6 S11-0507-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000