Datasheet AD5235 (Analog Devices) - 6
| 制造商 | Analog Devices |
| 描述 | Nonvolatile Memory, Dual 1024-Position Digital Potentiometer |
| 页数 / 页 | 32 / 6 — AD5235. Data Sheet. INTERFACE TIMING AND EEMEM RELIABILITY … |
| 修订版 | F |
| 文件格式/大小 | PDF / 800 Kb |
| 文件语言 | 英语 |
AD5235. Data Sheet. INTERFACE TIMING AND EEMEM RELIABILITY CHARACTERISTICS—25 kΩ, 250 kΩ VERSIONS. Table 2. Parameter. Symbol
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AD5235 Data Sheet INTERFACE TIMING AND EEMEM RELIABILITY CHARACTERISTICS—25 kΩ, 250 kΩ VERSIONS
Guaranteed by design and not subject to production test. See the Timing Diagrams section for the location of measured values. All input control voltages are specified with tR = tF = 2.5 ns (10% to 90% of 3 V) and timed from a voltage level of 1.5 V. Switching characteristics are measured using both VDD = 2.7 V and VDD = 5 V.
Table 2. Parameter Symbol Conditions Min Typ1 Max Unit
Clock Cycle Time (tCYC) t1 20 ns CS Setup Time t2 10 ns CLK Shutdown Time to CS Rise t3 1 tCYC Input Clock Pulse Width t4, t5 Clock level high or low 10 ns Data Setup Time t6 From positive CLK transition 5 ns Data Hold Time t7 From positive CLK transition 5 ns CS to SDO-SPI Line Acquire t8 40 ns CS to SDO-SPI Line Release t9 50 ns CLK to SDO Propagation Delay2 t10 RP = 2.2 kΩ, CL < 20 pF 50 ns CLK to SDO Data Hold Time t11 RP = 2.2 kΩ, CL < 20 pF 0 ns CS High Pulse Width3 t12 10 ns CS High to CS High3 t13 4 tCYC RDY Rise to CS Fall t14 0 ns CS Rise to RDY Fall Time t15 0.15 0.3 ms Store EEMEM Time4, 5 t16 Applies to Instructions 0x2, 0x3 15 50 ms Read EEMEM Time4 t16 Applies to Instructions 0x8, 0x9, 0x10 7 30 µs CS Rise to Clock Rise/Fall Setup t17 10 ns Preset Pulse Width (Asynchronous)6 tPRW 50 ns Preset Response Time to Wiper Setting6 tPRESP PR pulsed low to refresh wiper positions 30 µs Power-On EEMEM Restore Time6 tEEMEM 30 µs FLASH/EE MEMORY RELIABILITY Endurance7 TA = 25°C 1 MCycles 100 kCycles Data Retention8 100 Years 1 Typicals represent average readings at 25°C and VDD = 5 V. 2 Propagation delay depends on the value of VDD, RPULL-UP, and CL. 3 Valid for commands that do not activate the RDY pin. 4 The RDY pin is low only for Instruction 2, Instruction 3, Instruction 8, Instruction 9, Instruction 10, and the PR hardware pulse: CMD_8 ~ 20 µs; CMD_9, CMD_10 ~ 7 µs; CMD_2, CMD_3 ~ 15 ms; PR hardware pulse ~ 30 µs. 5 Store EEMEM time depends on the temperature and EEMEM writes cycles. Higher timing is expected at a lower temperature and higher write cycles. 6 Not shown in Figure 2 and Figure 3. 7 Endurance is qualified to 100,000 cycles per JEDEC Standard 22, Method A117 and measured at −40°C, +25°C, and +85°C. 8 Retention lifetime equivalent at junction temperature (TJ) = 85°C per JEDEC Standard 22, Method A117. Retention lifetime based on an activation energy of 1 eV derates with junction temperature in the Flash/EE memory. Rev. F | Page 6 of 32 Document Outline Features Applications General Description Functional Block Diagram Revision History Specifications Electrical Characteristics—25 kΩ, 250 kΩ Versions Interface Timing and EEMEM Reliability Characteristics—25 kΩ, 250 kΩ Versions Timing Diagrams Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Typical Performance Characteristics Test Circuits Theory of Operation Scratchpad and EEMEM Programming Basic Operation EEMEM Protection Digital Input and Output Configuration Serial Data Interface Daisy-Chain Operation Terminal Voltage Operating Range Power-Up Sequence Layout and Power Supply Bypassing Advanced Control Modes Linear Increment and Decrement Instructions Logarithmic Taper Mode Adjustment Using to Re-Execute a Previous Command Using Additional Internal Nonvolatile EEMEM Calculating Actual End-to-End Terminal Resistance RDAC Structure Programming the Variable Resistor Rheostat Operation Programming the Potentiometer Divider Voltage Output Operation Programming Examples EVAL-AD5235SDZ Evaluation Kit Applications Information Bipolar Operation from Dual Supplies Gain Control Compensation High Voltage Operation DAC Bipolar Programmable Gain Amplifier 10-Bit Bipolar DAC Programmable Voltage Source with Boosted Output Programmable Current Source Programmable Bidirectional Current Source Programmable Low-Pass Filter Programmable Oscillator Optical Transmitter Calibration with ADN2841 Resistance Scaling Resistance Tolerance, Drift, and Temperature Coefficient Mismatch Considerations RDAC Circuit Simulation Model Outline Dimensions Ordering Guide
AD5235 Data Sheet INTERFACE TIMING AND EEMEM RELIABILITY CHARACTERISTICS—25 kΩ, 250 kΩ VERSIONS
Guaranteed by design and not subject to production test. See the Timing Diagrams section for the location of measured values. All input control voltages are specified with tR = tF = 2.5 ns (10% to 90% of 3 V) and timed from a voltage level of 1.5 V. Switching characteristics are measured using both VDD = 2.7 V and VDD = 5 V.
Table 2. Parameter Symbol Conditions Min Typ1 Max Unit
Clock Cycle Time (tCYC) t1 20 ns CS Setup Time t2 10 ns CLK Shutdown Time to CS Rise t3 1 tCYC Input Clock Pulse Width t4, t5 Clock level high or low 10 ns Data Setup Time t6 From positive CLK transition 5 ns Data Hold Time t7 From positive CLK transition 5 ns CS to SDO-SPI Line Acquire t8 40 ns CS to SDO-SPI Line Release t9 50 ns CLK to SDO Propagation Delay2 t10 RP = 2.2 kΩ, CL < 20 pF 50 ns CLK to SDO Data Hold Time t11 RP = 2.2 kΩ, CL < 20 pF 0 ns CS High Pulse Width3 t12 10 ns CS High to CS High3 t13 4 tCYC RDY Rise to CS Fall t14 0 ns CS Rise to RDY Fall Time t15 0.15 0.3 ms Store EEMEM Time4, 5 t16 Applies to Instructions 0x2, 0x3 15 50 ms Read EEMEM Time4 t16 Applies to Instructions 0x8, 0x9, 0x10 7 30 µs CS Rise to Clock Rise/Fall Setup t17 10 ns Preset Pulse Width (Asynchronous)6 tPRW 50 ns Preset Response Time to Wiper Setting6 tPRESP PR pulsed low to refresh wiper positions 30 µs Power-On EEMEM Restore Time6 tEEMEM 30 µs FLASH/EE MEMORY RELIABILITY Endurance7 TA = 25°C 1 MCycles 100 kCycles Data Retention8 100 Years 1 Typicals represent average readings at 25°C and VDD = 5 V. 2 Propagation delay depends on the value of VDD, RPULL-UP, and CL. 3 Valid for commands that do not activate the RDY pin. 4 The RDY pin is low only for Instruction 2, Instruction 3, Instruction 8, Instruction 9, Instruction 10, and the PR hardware pulse: CMD_8 ~ 20 µs; CMD_9, CMD_10 ~ 7 µs; CMD_2, CMD_3 ~ 15 ms; PR hardware pulse ~ 30 µs. 5 Store EEMEM time depends on the temperature and EEMEM writes cycles. Higher timing is expected at a lower temperature and higher write cycles. 6 Not shown in Figure 2 and Figure 3. 7 Endurance is qualified to 100,000 cycles per JEDEC Standard 22, Method A117 and measured at −40°C, +25°C, and +85°C. 8 Retention lifetime equivalent at junction temperature (TJ) = 85°C per JEDEC Standard 22, Method A117. Retention lifetime based on an activation energy of 1 eV derates with junction temperature in the Flash/EE memory. Rev. F | Page 6 of 32 Document Outline Features Applications General Description Functional Block Diagram Revision History Specifications Electrical Characteristics—25 kΩ, 250 kΩ Versions Interface Timing and EEMEM Reliability Characteristics—25 kΩ, 250 kΩ Versions Timing Diagrams Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Typical Performance Characteristics Test Circuits Theory of Operation Scratchpad and EEMEM Programming Basic Operation EEMEM Protection Digital Input and Output Configuration Serial Data Interface Daisy-Chain Operation Terminal Voltage Operating Range Power-Up Sequence Layout and Power Supply Bypassing Advanced Control Modes Linear Increment and Decrement Instructions Logarithmic Taper Mode Adjustment Using to Re-Execute a Previous Command Using Additional Internal Nonvolatile EEMEM Calculating Actual End-to-End Terminal Resistance RDAC Structure Programming the Variable Resistor Rheostat Operation Programming the Potentiometer Divider Voltage Output Operation Programming Examples EVAL-AD5235SDZ Evaluation Kit Applications Information Bipolar Operation from Dual Supplies Gain Control Compensation High Voltage Operation DAC Bipolar Programmable Gain Amplifier 10-Bit Bipolar DAC Programmable Voltage Source with Boosted Output Programmable Current Source Programmable Bidirectional Current Source Programmable Low-Pass Filter Programmable Oscillator Optical Transmitter Calibration with ADN2841 Resistance Scaling Resistance Tolerance, Drift, and Temperature Coefficient Mismatch Considerations RDAC Circuit Simulation Model Outline Dimensions Ordering Guide