Datasheet AD5235-EP (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | Nonvolatile Memory, Dual 1024-Position Digital Potentiometer |
| 页数 / 页 | 14 / 3 — Enhanced Product. AD5235-EP. SPECIFICATIONS ELECTRICAL CHARACTERISTICS. … |
| 修订版 | B |
| 文件格式/大小 | PDF / 540 Kb |
| 文件语言 | 英语 |
Enhanced Product. AD5235-EP. SPECIFICATIONS ELECTRICAL CHARACTERISTICS. Table 1. Parameter. Symbol. Conditions. Min. Typ1. Max. Unit
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Enhanced Product AD5235-EP SPECIFICATIONS ELECTRICAL CHARACTERISTICS
VDD = 2.7 V to 5.5 V, VSS = 0 V; VDD = 2.5 V, VSS = −2.5 V, VA = VDD, VB = VSS, −40°C < TA < +125°C, unless otherwise noted.
Table 1. Parameter Symbol Conditions Min Typ1 Max Unit
DC CHARACTERISTICS—RHEOSTAT MODE (All RDACs) Resistor Differential Nonlinearity2 R-DNL RWB −1 +1 LSB Resistor Integral Nonlinearity2 R-INL RWB −2 +2 LSB Nominal Resistor Tolerance ∆RAB/RAB Code = full-scale −8 +8 % Resistance Temperature Coefficient (∆RAB/RAB)/∆T × 106 35 ppm/°C Wiper Resistance RW IW = 1 V/RWB, VDD = 5 V, code = 30 65 Ω half scale IW = 1 V/RWB, VDD = 3 V, code = 50 Ω half scale Nominal Resistance Match RAB1/RAB2 Code = full-scale, TA = 25°C ±0.1 % DC CHARACTERISTICS—POTENTIOMETER DIVIDER MODE (All RDACs) Resolution N 10 Bits Differential Nonlinearity3 DNL −1 +1 LSB Integral Nonlinearity3 INL −1 +1 LSB Voltage Divider Temperature Coefficient (∆VW/VW)/∆T × 106 Code = half scale 15 ppm/°C Full-Scale Error VWFSE Code = full-scale −7 0 LSB Zero-Scale Error VWZSE Code = zero scale 0 5 LSB RESISTOR TERMINALS Terminal Voltage Range4 VA, VB, VW VSS VDD V Capacitance Ax, Bx5 CA, CB f = 1 MHz, measured to GND, 11 pF code = half scale Capacitance Wx5 CW f = 1 MHz, measured to GND, 80 pF code = half scale Common-Mode Leakage Current5, 6 ICM VW = VDD/2 0.01 ±1 µA DIGITAL INPUTS AND OUTPUTS Input Logic High VIH With respect to GND, VDD = 5 V 2.4 V Input Logic Low VIL With respect to GND, VDD = 5 V 0.8 V Input Logic High VIH With respect to GND, VDD = 3 V 2.1 V Input Logic Low VIL With respect to GND, VDD = 3 V 0.6 V Input Logic High VIH With respect to GND, VDD = +2.5 V, 2.0 V VSS = −2.5 V Input Logic Low VIL With respect to GND, VDD = +2.5 V, 0.5 V VSS = −2.5 V Output Logic High (SDO, RDY) VOH RPULL-UP = 2.2 kΩ to 5 V 4.9 V Output Logic Low VOL IOL = 1.6 mA, VLOGIC = 5 V 0.4 V Input Current IIL VIN = 0 V or VDD ±2.25 µA Input Capacitance5 CIL 5 pF Rev. B | Page 3 of 14 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS INTERFACE TIMING AND EEMEM RELIABILITY CHARACTERISTICS Timing Diagrams ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE
Enhanced Product AD5235-EP SPECIFICATIONS ELECTRICAL CHARACTERISTICS
VDD = 2.7 V to 5.5 V, VSS = 0 V; VDD = 2.5 V, VSS = −2.5 V, VA = VDD, VB = VSS, −40°C < TA < +125°C, unless otherwise noted.
Table 1. Parameter Symbol Conditions Min Typ1 Max Unit
DC CHARACTERISTICS—RHEOSTAT MODE (All RDACs) Resistor Differential Nonlinearity2 R-DNL RWB −1 +1 LSB Resistor Integral Nonlinearity2 R-INL RWB −2 +2 LSB Nominal Resistor Tolerance ∆RAB/RAB Code = full-scale −8 +8 % Resistance Temperature Coefficient (∆RAB/RAB)/∆T × 106 35 ppm/°C Wiper Resistance RW IW = 1 V/RWB, VDD = 5 V, code = 30 65 Ω half scale IW = 1 V/RWB, VDD = 3 V, code = 50 Ω half scale Nominal Resistance Match RAB1/RAB2 Code = full-scale, TA = 25°C ±0.1 % DC CHARACTERISTICS—POTENTIOMETER DIVIDER MODE (All RDACs) Resolution N 10 Bits Differential Nonlinearity3 DNL −1 +1 LSB Integral Nonlinearity3 INL −1 +1 LSB Voltage Divider Temperature Coefficient (∆VW/VW)/∆T × 106 Code = half scale 15 ppm/°C Full-Scale Error VWFSE Code = full-scale −7 0 LSB Zero-Scale Error VWZSE Code = zero scale 0 5 LSB RESISTOR TERMINALS Terminal Voltage Range4 VA, VB, VW VSS VDD V Capacitance Ax, Bx5 CA, CB f = 1 MHz, measured to GND, 11 pF code = half scale Capacitance Wx5 CW f = 1 MHz, measured to GND, 80 pF code = half scale Common-Mode Leakage Current5, 6 ICM VW = VDD/2 0.01 ±1 µA DIGITAL INPUTS AND OUTPUTS Input Logic High VIH With respect to GND, VDD = 5 V 2.4 V Input Logic Low VIL With respect to GND, VDD = 5 V 0.8 V Input Logic High VIH With respect to GND, VDD = 3 V 2.1 V Input Logic Low VIL With respect to GND, VDD = 3 V 0.6 V Input Logic High VIH With respect to GND, VDD = +2.5 V, 2.0 V VSS = −2.5 V Input Logic Low VIL With respect to GND, VDD = +2.5 V, 0.5 V VSS = −2.5 V Output Logic High (SDO, RDY) VOH RPULL-UP = 2.2 kΩ to 5 V 4.9 V Output Logic Low VOL IOL = 1.6 mA, VLOGIC = 5 V 0.4 V Input Current IIL VIN = 0 V or VDD ±2.25 µA Input Capacitance5 CIL 5 pF Rev. B | Page 3 of 14 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS INTERFACE TIMING AND EEMEM RELIABILITY CHARACTERISTICS Timing Diagrams ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE