Datasheet AD5232 (Analog Devices) - 5

制造商Analog Devices
描述Nonvolatile Memory, Dual 256-Position Digital Potentiometer
页数 / 页24 / 5 — Data Sheet. AD5232. INTERFACE TIMING CHARACTERISTICS. Table 2. …
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Data Sheet. AD5232. INTERFACE TIMING CHARACTERISTICS. Table 2. Parameter1, 2. Symbol. Conditions. Min. Typ3. Max. Unit

Data Sheet AD5232 INTERFACE TIMING CHARACTERISTICS Table 2 Parameter1, 2 Symbol Conditions Min Typ3 Max Unit

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Data Sheet AD5232 INTERFACE TIMING CHARACTERISTICS
All input control voltages are specified with tR = tF = 2.5 ns (10% to 90% of 3 V) and are timed from a voltage level of 1.5 V. Switching characteristics are measured using both VDD = 3 V and VDD = 5 V.
Table 2. Parameter1, 2 Symbol Conditions Min Typ3 Max Unit
Clock Cycle Time (tCYC) t1 20 ns CS Setup Time t2 10 ns CLK Shutdown Time to CS Rise t3 1 tCYC Input Clock Pulse Width t4, t5 Clock level high or low 10 ns Data Setup Time t6 From positive CLK transition 5 ns Data Hold Time t7 From positive CLK transition 5 ns CS to SDO-SPI Line Acquire t8 40 ns CS to SDO-SPI Line Release t9 50 ns CLK to SDO Propagation Delay4 t10 RP = 2.2 kΩ, CL < 20 pF 50 ns CLK to SDO Data Hold Time t11 RP = 2.2 kΩ, CL < 20 pF 0 ns CS High Pulse Width5 t12 10 ns CS High to CS High5 t13 4 tCYC RDY Rise to CS Fall t14 0 ns CS Rise to RDY Fall Time t15 0.15 0.3 ms Store/Read EEMEM Time6 t16 Applies to Command Instruction 2, Command 25 ms Instruction 3, and Command Instruction 9 CS Rise to Clock Rise/Fall Setup t17 10 ns Preset Pulse Width (Asynchronous) tPRW Not shown in timing diagram 50 ns Preset Response Time to RDY High tPRESP PR pulsed low to refresh wiper positions 70 µs 1 Guaranteed by design; not subject to production test. 2 See the Timing Diagrams section for the location of measured values. 3 Typicals represent average readings at 25°C and VDD = 5 V. 4 Propagation delay depends on the value of VDD, RPULL-UP, and CL. 5 Valid for commands that do not activate the RDY pin. 6 RDY pin low only for Command Instruction 2, Command Instruction 3, Command Instruction 8, Command Instruction 9, Command Instruction 10, and the PR hardware pulse: CMD_8 ~ 1 ms, CMD_9 = CMD_10 ~ 0.12 ms, and CMD_2 = CMD_3 ~ 20 ms. Device operation at TA = −40°C and VDD < 3 V extends the save time to 35 ms. Rev. C | Page 5 of 24 Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications Electrical Characteristics—10 kΩ, 50 kΩ, 100 kΩ Versions Interface Timing Characteristics Timing Diagrams Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configuration and Function Descriptions Typical Performance Characteristics Test Circuits Theory of Operation Scratch Pad and EEMEM Programming Basic Operation EEMEM Protection Digital Input/Output Configuration Serial Data Interface Daisy-Chaining Operation Advanced Control Modes Increment and Decrement Commands Logarithmic Taper Mode Adjustment Using Additional Internal, Nonvolatile EEMEM Terminal Voltage Operating Range Detailed Potentiometer Operation Programming the Variable Resistor Rheostat Operation Programming the Potentiometer Divider Voltage Output Operation Operation from Dual Supplies Application Programming Examples Equipment Customer Start-up Sequence for a PCB Calibrated Unit with Protected Settings Flash/EEMEM Reliability Evaluation Board Outline Dimensions Ordering Guide