Datasheet AD5231 (Analog Devices) - 4

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AD5231 Data Sheet Parameter Symbol Conditions Min Typ1 Max Unit
POWER SUPPLIES Single-Supply Power Range VDD VSS = 0 V 2.7 5.5 V Dual-Supply Power Range VDD/VSS ±2.25 ±2.75 V Positive Supply Current IDD VIH = VDD or VIL = GND 2.7 10 µA Negative Supply Current ISS VIH = VDD or VIL = GND, 0.5 10 µA VDD = +2.5 V, VSS = −2.5 V EEMEM Store Mode Current IDD (store) VIH = VDD or VIL = GND, 40 mA VSS = GND, ISS ≈ 0 ISS (store) VDD = +2.5 V, VSS = −2.5 V −40 mA EEMEM Restore Mode Current7 IDD (restore) VIH = VDD or VIL = GND, 0.3 3 9 mA VSS = GND, ISS ≈ 0 ISS (restore) VDD = +2.5 V, VSS = −2.5 V −0.3 −3 −9 mA Power Dissipation8 PDISS VIH = VDD or VIL = GND 0.018 0.05 mW Power Supply Sensitivity5 PSS ΔVDD = 5 V ± 10% 0.002 0.01 %/% DYNAMIC CHARACTERISTICS5, 9 Bandwidth BW −3 dB, RAB = 10 kΩ/50 kΩ/ 370/85/44 kHz 100 kΩ Total Harmonic Distortion THDW VA = 1 V rms, VB = 0 V, f = 1 kHz, 0.045 % RAB = 10 kΩ VA = 1 V rms, VB = 0 V, f = 1 kHz, 0.022 % RAB = 50 kΩ, 100 kΩ VW Settling Time tS VA = VDD, VB = 0 V, 1.2/3.7/7 µs VW = 0.50% error band, Code 0x000 to 0x200 for RAB = 10 kΩ/50 kΩ/100 kΩ Resistor Noise Voltage eN_WB RWB = 5 kΩ, f = 1 kHz 9 nV/√Hz 1 Typical values represent average readings at 25°C and VDD = 5 V. 2 Resistor position nonlinearity error (R-INL) is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper positions. R-DNL measures the relative step change from ideal between successive tap positions. IW ~ 50 µA @ VDD = 2.7 V and IW ~ 400 µA @ VDD = 5 V for the RAB = 10 kΩ version, IW ~ 50 µA for the RAB = 50 kΩ, and IW ~ 25 µA for the RAB = 100 kΩ version (see Figure 26). 3 INL and DNL are measured at VW with the RDAC configured as a potentiometer divider similar to a voltage output DAC. VA = VDD and VB = VSS. DNL specification limits of −1 LSB minimum are guaranteed monotonic operating condition (see Figure 27). 4 Resistor Terminal A, Resistor Terminal B, and Resistor Terminal W have no limitations on polarity with respect to each other. Dual-supply operation enables ground- referenced bipolar signal adjustment. 5 Guaranteed by design and not subject to production test. 6 Common-mode leakage current is a measure of the dc leakage from any Terminal B–W to a common-mode bias level of VDD/2. 7 EEMEM restore mode current is not continuous. Current consumed while EEMEM locations are read and transferred to the RDAC register (see Figure 23). To minimize power dissipation, a NOP Instruction 0 (0x0) should be issued immediately after Instruction 1 (0x1). 8 PDISS is calculated from (IDD × VDD) + (ISS × VSS). 9 All dynamic characteristics use VDD = +2.5 V and VSS = −2.5 V. Rev. D | Page 4 of 28 Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications Electrical Characteristics—10 kΩ, 50 kΩ, 100 kΩ Versions Timing Characteristics—10 kΩ, 50 kΩ, 100 kΩ Versions Timing Diagrams Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Typical Performance Characteristics Test Circuits Theory of Operation Scratchpad and EEMEM Programming Basic Operation EEMEM Protection Digital Input/Output Configuration Serial Data Interface Daisy-Chain Operation Terminal Voltage Operation Range Power-Up Sequence Latched Digital Outputs Advanced Control Modes Linear Increment and Decrement Instructions Logarithmic Taper Mode Adjustment Using Additional Internal Nonvolatile EEMEM RDAC Structure Programming the Variable Resistor Rheostat Operation Programming the Potentiometer Divider Voltage Output Operation Programming Examples Flash/EEMEM Reliability Applications Bipolar Operation from Dual Supplies High Voltage Operation Bipolar Programmable Gain Amplifier 10-Bit Bipolar DAC 10-Bit Unipolar DAC Programmable Voltage Source with Boosted Output Programmable Current Source Programmable Bidirectional Current Source Resistance Scaling RDAC Circuit Simulation Model Outline Dimensions Ordering Guide