Datasheet 2N7000, 2N7002, NDS7002A (ON Semiconductor) - 5

2N7000 / 2N7002 / NDS7002A — N-Chan Typical Performance Characteristics 2N7000 / 2N7002 / NDS7002A
2 3 VGS = 10V 9.0 GS V =4.0V 8.0 4 .5 7.0 2 .5 5 .0 1 .5 6 .0 6.0 2 7 .0 1 5.0 8 .0 1 .5 9 .0 DS(on)R , NORMALIZED 1 0 0 .5 4.0 1 DRAIN-SOURCE ON-RESISTANCE D I , DRAIN-SOURCE CURRENT (A) 3.0 0 0 .5 0 1 2 3 4 5 0 0 .4 0 .8 1 .2 1 .6 2 V , DRAIN-SOURCE VOLTAGE (V DS I , DRA IN CURRENT (A) D
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Voltage and Drain Current nel Enh
2 3 V V V = 10V GS GS
a
1 .75 2 .5 D I = 500m A
ncement Mode Field Effect T
T = 1 2 5 ° C J 1 .5 2 1 .25 1 .5 2 5 ° C DS(on) DS(on) R , NORMALIZED 1 R , NORMALIZED 1 -55°C DRAIN-SOURCE ON-RESISTANCE DRAIN-SOURCE ON-RESISTANCE 0 .75 0 .5 0 .5 0 -5 0 -2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 0 .4 0 .8 1 .2 1 .6 2 T , JUNCTION T EMPERATURE (°C) J I , DRAIN CURRENT (A) D
Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with Drain with Temperature Current and Temperature
2 1 .1
r
J T = -55°C
ansisto
V = 1 0 9 2 5 ° C DS V = V DS GS 1 2 5 ° C 1 .0 5 1.6 D I = 1 m A D 1 1.2
r
0 .9 5 250$/,=( 0.8 th '5$,1&855(17$ V , N 0 .9 WK91250$/,=(' D, 0.4 0 .8 5 *$7(6285&(7+5(6+2/'92/7$*( 0 0 .8 0 2 4 6 8 10 -50 -25 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 V V , GATE TO SOURCE VOLTAGE (V T , JUNCTION TEM PERA T U RE (°C) J GS
Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with Temperature
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