Datasheet BSS138 (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 页数 / 页 | 5 / 2 — B SS138. Electrical Characteristics. Symbol. Parameter. Test. Conditions. … |
| 修订版 | 3 |
| 文件格式/大小 | PDF / 188 Kb |
| 文件语言 | 英语 |
B SS138. Electrical Characteristics. Symbol. Parameter. Test. Conditions. Min. Typ Max. Units. Off Characteristics. On Characteristics
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文件文字版本
B SS138 Electrical Characteristics
T = 25°C unless otherwise noted A
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 50 V ∆BVDSS Breakdown Voltage Temperature ID = 250 µA,Referenced to 25°C mV/°C ∆ 72 TJ Coefficient IDSS Zero Gate Voltage Drain Current VDS = 50 V, VGS = 0 V 0.5 µA VDS = 50 V, VGS = 0 V TJ = 125°C 5 µA VDS = 30 V, VGS = 0 V 100 nA IGSS Gate–Body Leakage. VGS = ±20 V, VDS = 0 V ±100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 0.8 1.3 1.5 V ∆VGS(th) Gate Threshold Voltage ID = 1 mA,Referenced to 25°C –2 mV/°C ∆TJ Temperature Coefficient RDS(on) Static Drain–Source VGS = 10 V, ID = 0.22 A 0.7 3.5 Ω On–Resistance VGS = 4.5 V, ID = 0.22 A 1.0 6.0 VGS = 10 V, ID = 0.22 A, TJ = 125°C 1.1 5.8 ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 0.2 A gFS Forward Transconductance VDS = 10V, ID = 0.22 A 0.12 0.5 S
Dynamic Characteristics
Ciss Input Capacitance 27 pF VDS = 25 V, V GS = 0 V, Coss Output Capacitance f = 1.0 MHz 13 pF Crss Reverse Transfer Capacitance 6 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 9 Ω
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time V 2.5 5 ns DD = 30 V, ID = 0.29 A, t V r Turn–On Rise Time GS = 10 V, RGEN = 6 Ω 9 18 ns td(off) Turn–Off Delay Time 20 36 ns tf Turn–Off Fall Time 7 14 ns Qg Total Gate Charge V 1.7 2.4 nC DS = 25 V, ID = 0.22 A, Q VGS = 10 V gs Gate–Source Charge 0.1 nC Qgd Gate–Drain Charge 0.4 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 0.22 A VSD Drain–Source Diode Forward VGS = 0 V, IS = 0.44 A(Note 2) 0.8 1.4 V Voltage
Notes: 1.
Rθ is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of JA the drain pins. Rθ is guaranteed by design while R is determined by the user's board design. JC θCA a) 350°C/W when mounted on a minimum pad.. Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% www.onsemi.com 2
T = 25°C unless otherwise noted A
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 50 V ∆BVDSS Breakdown Voltage Temperature ID = 250 µA,Referenced to 25°C mV/°C ∆ 72 TJ Coefficient IDSS Zero Gate Voltage Drain Current VDS = 50 V, VGS = 0 V 0.5 µA VDS = 50 V, VGS = 0 V TJ = 125°C 5 µA VDS = 30 V, VGS = 0 V 100 nA IGSS Gate–Body Leakage. VGS = ±20 V, VDS = 0 V ±100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 0.8 1.3 1.5 V ∆VGS(th) Gate Threshold Voltage ID = 1 mA,Referenced to 25°C –2 mV/°C ∆TJ Temperature Coefficient RDS(on) Static Drain–Source VGS = 10 V, ID = 0.22 A 0.7 3.5 Ω On–Resistance VGS = 4.5 V, ID = 0.22 A 1.0 6.0 VGS = 10 V, ID = 0.22 A, TJ = 125°C 1.1 5.8 ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 0.2 A gFS Forward Transconductance VDS = 10V, ID = 0.22 A 0.12 0.5 S
Dynamic Characteristics
Ciss Input Capacitance 27 pF VDS = 25 V, V GS = 0 V, Coss Output Capacitance f = 1.0 MHz 13 pF Crss Reverse Transfer Capacitance 6 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 9 Ω
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time V 2.5 5 ns DD = 30 V, ID = 0.29 A, t V r Turn–On Rise Time GS = 10 V, RGEN = 6 Ω 9 18 ns td(off) Turn–Off Delay Time 20 36 ns tf Turn–Off Fall Time 7 14 ns Qg Total Gate Charge V 1.7 2.4 nC DS = 25 V, ID = 0.22 A, Q VGS = 10 V gs Gate–Source Charge 0.1 nC Qgd Gate–Drain Charge 0.4 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 0.22 A VSD Drain–Source Diode Forward VGS = 0 V, IS = 0.44 A(Note 2) 0.8 1.4 V Voltage
Notes: 1.
Rθ is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of JA the drain pins. Rθ is guaranteed by design while R is determined by the user's board design. JC θCA a) 350°C/W when mounted on a minimum pad.. Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% www.onsemi.com 2