Datasheet SUP90P06-09L (Vishay) - 2
| 制造商 | Vishay |
| 描述 | P-Channel 60 V (D-S) 175 °C MOSFET |
| 页数 / 页 | 7 / 2 — SUP90P06-09L. SPECIFICATIONS. Parameter Symbol. Test. Conditions. Min. … |
| 修订版 | B |
| 文件格式/大小 | PDF / 106 Kb |
| 文件语言 | 英语 |
SUP90P06-09L. SPECIFICATIONS. Parameter Symbol. Test. Conditions. Min. Typ. Max. Unit. Static. Dynamicb
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SUP90P06-09L
Vishay Siliconix
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 60 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 60 V, VGS = 0 V - 1 Zero Gate Voltage Drain Current IDSS VDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 µA VDS = - 60 V, VGS = 0 V, TJ = 175 °C - 250 On-State Drain Currenta I D(on) VDS = - 5 V, VGS = - 10 V - 120 A VGS = - 10 V, ID = - 30 A 0.0074 0.0093 VGS = - 10 V, ID = - 30 A, TJ = 125 °C 0.0150 Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 30 A, TJ = 175 °C 0.0190 VGS = - 4.5 V, ID = - 20 A 0.0094 0.0118 Forward Transconductancea gfs VDS = - 15 V, ID = - 30 A 20 S
Dynamicb
Input Capacitance Ciss 9200 Output Capacitance C V oss GS = 0 V, VDS = - 25 V, f = 1 MHz 975 pF Reverse Transfer Capacitance Crss 760 Total Gate Chargec Qg 160 240 V Gate-Source Chargec Qgs DS = - 30 V, VGS = - 10 V, ID = - 90 A 40 nC Gate-Drain Chargec Qgd 36 Gate Resistance Rg f = 1.0 MHz 3 Turn-On Delay Timec td(on) 20 30 Rise Timec tr VDD = - 30 V, RL = 0.33 190 285 ns I Turn-Off Delay Timec td(off) D - 90 A, VGEN = - 10 V, Rg = 2.5 140 210 Fall Timec tf 300 450
Source-Drain Diode Ratings and Characteristics
(TC = 25 °C)b Continuous Current IS - 90 A Pulsed Current ISM - 200 Forward Voltagea VSD IF = - 50 A, VGS = 0 V - 1.0 - 1.5 V Reverse Recovery Time trr 60 90 ns Peak Reverse Recovery Current I I RM(REC) F = - 50 A, dI/dt = 100 A/µs - 3 - 4.5 A Reverse Recovery Charge Qrr 0.09 0.2 µC Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73010 2 S10-2545-Rev. B, 08-Nov-10
Vishay Siliconix
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 60 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 60 V, VGS = 0 V - 1 Zero Gate Voltage Drain Current IDSS VDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 µA VDS = - 60 V, VGS = 0 V, TJ = 175 °C - 250 On-State Drain Currenta I D(on) VDS = - 5 V, VGS = - 10 V - 120 A VGS = - 10 V, ID = - 30 A 0.0074 0.0093 VGS = - 10 V, ID = - 30 A, TJ = 125 °C 0.0150 Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 30 A, TJ = 175 °C 0.0190 VGS = - 4.5 V, ID = - 20 A 0.0094 0.0118 Forward Transconductancea gfs VDS = - 15 V, ID = - 30 A 20 S
Dynamicb
Input Capacitance Ciss 9200 Output Capacitance C V oss GS = 0 V, VDS = - 25 V, f = 1 MHz 975 pF Reverse Transfer Capacitance Crss 760 Total Gate Chargec Qg 160 240 V Gate-Source Chargec Qgs DS = - 30 V, VGS = - 10 V, ID = - 90 A 40 nC Gate-Drain Chargec Qgd 36 Gate Resistance Rg f = 1.0 MHz 3 Turn-On Delay Timec td(on) 20 30 Rise Timec tr VDD = - 30 V, RL = 0.33 190 285 ns I Turn-Off Delay Timec td(off) D - 90 A, VGEN = - 10 V, Rg = 2.5 140 210 Fall Timec tf 300 450
Source-Drain Diode Ratings and Characteristics
(TC = 25 °C)b Continuous Current IS - 90 A Pulsed Current ISM - 200 Forward Voltagea VSD IF = - 50 A, VGS = 0 V - 1.0 - 1.5 V Reverse Recovery Time trr 60 90 ns Peak Reverse Recovery Current I I RM(REC) F = - 50 A, dI/dt = 100 A/µs - 3 - 4.5 A Reverse Recovery Charge Qrr 0.09 0.2 µC Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73010 2 S10-2545-Rev. B, 08-Nov-10