BAW56W (Diodes) - 2
| 制造商 | Diodes |
| 描述 | DUAL SURFACE MOUNT SWITCHING DIODE |
| 页数 / 页 | 4 / 2 — BAW56W. Maximum Ratings. Characteristic Symbol. Value. Unit. Thermal … |
| 文件格式/大小 | PDF / 82 Kb |
| 文件语言 | 英语 |
BAW56W. Maximum Ratings. Characteristic Symbol. Value. Unit. Thermal Characteristics. Electrical Characteristics. Min. Max. Test. Condition
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文件文字版本
BAW56W Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 75 V DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current (Note 5) IFM 300 mA Average Rectified Output Current (Note 5) IO 150 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0μs 2.0 I A (Note 5) @ t = 1.0s FSM 1.0
Thermal Characteristics Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD 200 mW Thermal Resistance Junction to Ambient Air (Note 5) RθJA 625 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 6) V(BR)R 75 ⎯ V IR = 2.5μA 0.715 IF = 1.0mA 0.855 I Forward Voltage V F = 10mA F ⎯ V 1.0 IF = 50mA 1.25 IF = 150mA 2.5 μA VR = 75V 50 μA V Reverse Current (Note 6) I R = 75V, TJ = 150°C R ⎯ 30 μA VR = 25V, TJ = 150°C 25 nA VR = 20V Total Capacitance CT ⎯ 2.0 pF VR = 0, f = 1.0MHz I Reverse Recovery Time t F = IR = 10mA, rr ⎯ 4.0 ns Irr = 0.1 x IR, RL = 100Ω Notes: 5. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com. 6. Short duration pulse test used to minimize self-heating effect. 250 ) 1 (A Note 5 T EN ) 200 R W R m U C N ( D 0.1 IO R T 150 A WA IP R S O F DIS S R 100 U O WE 0.01 O P ANE T , D 50 P AN T S N I I, F 0 0.001 0 40 80 120 160 200 0 0.5 1.0 1.5 T , AMBIENT TEMPERATURE (°C) V , INSTANTANEOUS FORWARD VOLTAGE (V) A F Fig. 1 Power Derating Curve, Total Package Fig. 2 Typical Forward Characteristics, Per Element BAW56W 2 of 4 November 2011 Document number: DS30064 Rev. 12 - 2
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© Diodes Incorporated
@TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 75 V DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current (Note 5) IFM 300 mA Average Rectified Output Current (Note 5) IO 150 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0μs 2.0 I A (Note 5) @ t = 1.0s FSM 1.0
Thermal Characteristics Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD 200 mW Thermal Resistance Junction to Ambient Air (Note 5) RθJA 625 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 6) V(BR)R 75 ⎯ V IR = 2.5μA 0.715 IF = 1.0mA 0.855 I Forward Voltage V F = 10mA F ⎯ V 1.0 IF = 50mA 1.25 IF = 150mA 2.5 μA VR = 75V 50 μA V Reverse Current (Note 6) I R = 75V, TJ = 150°C R ⎯ 30 μA VR = 25V, TJ = 150°C 25 nA VR = 20V Total Capacitance CT ⎯ 2.0 pF VR = 0, f = 1.0MHz I Reverse Recovery Time t F = IR = 10mA, rr ⎯ 4.0 ns Irr = 0.1 x IR, RL = 100Ω Notes: 5. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com. 6. Short duration pulse test used to minimize self-heating effect. 250 ) 1 (A Note 5 T EN ) 200 R W R m U C N ( D 0.1 IO R T 150 A WA IP R S O F DIS S R 100 U O WE 0.01 O P ANE T , D 50 P AN T S N I I, F 0 0.001 0 40 80 120 160 200 0 0.5 1.0 1.5 T , AMBIENT TEMPERATURE (°C) V , INSTANTANEOUS FORWARD VOLTAGE (V) A F Fig. 1 Power Derating Curve, Total Package Fig. 2 Typical Forward Characteristics, Per Element BAW56W 2 of 4 November 2011 Document number: DS30064 Rev. 12 - 2
www.diodes.com
© Diodes Incorporated