Datasheet IRL3705N (Infineon)
| 制造商 | Infineon |
| 描述 | 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
| 页数 / 页 | 9 / 1 — VDSS. 55V. RDS(on) max. 0.01. 89A. Description. G D S. Standard Pack. … |
| 修订版 | 01_02 |
| 文件格式/大小 | PDF / 455 Kb |
| 文件语言 | 英语 |
VDSS. 55V. RDS(on) max. 0.01. 89A. Description. G D S. Standard Pack. Base part number. Package Type. Orderable Part Number. Form. Quantity
该数据表的模型线
文件文字版本
IRL3705NPbF HEXFET® Power MOSFET Logic - Level Gate Drive D Advanced Process Technology
VDSS 55V
Dynamic dv/dt Rating G
RDS(on) max. 0.01
175°C Operating Temperature Fast Switching S
ID 89A
Fully Avalanche Rated Lead-Free
Description
Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on- S D resistance per silicon area. This benefit, combined G with the fast switching speed and ruggedized device TO-220AB design that HEXFET Power MOSFETs are well IRL3705NPbF known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
G D S
The TO-220 package is universally preferred for all Gate Drain Source commercial industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO- 220 contribute to its wide acceptance throughout the industry.
Standard Pack Base part number Package Type Orderable Part Number Form Quantity
IRL3705NPbF TO-220 Tube 50 IRL3705NPbF
Absolute Maximum Ratings Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 89 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 63 A IDM Pulsed Drain Current 310 PD @TC = 25°C Maximum Power Dissipation 170 W Linear Derating Factor 1.1 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy 340 mJ IAR Avalanche Current 46 A EAR Repetitive Avalanche Energy 17 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Thermal Resistance Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 0.90 RCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RJA Junction-to-Ambient ––– 62 1 2018-05-25
VDSS 55V
Dynamic dv/dt Rating G
RDS(on) max. 0.01
175°C Operating Temperature Fast Switching S
ID 89A
Fully Avalanche Rated Lead-Free
Description
Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on- S D resistance per silicon area. This benefit, combined G with the fast switching speed and ruggedized device TO-220AB design that HEXFET Power MOSFETs are well IRL3705NPbF known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
G D S
The TO-220 package is universally preferred for all Gate Drain Source commercial industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO- 220 contribute to its wide acceptance throughout the industry.
Standard Pack Base part number Package Type Orderable Part Number Form Quantity
IRL3705NPbF TO-220 Tube 50 IRL3705NPbF
Absolute Maximum Ratings Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 89 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 63 A IDM Pulsed Drain Current 310 PD @TC = 25°C Maximum Power Dissipation 170 W Linear Derating Factor 1.1 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy 340 mJ IAR Avalanche Current 46 A EAR Repetitive Avalanche Energy 17 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Thermal Resistance Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 0.90 RCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RJA Junction-to-Ambient ––– 62 1 2018-05-25