Datasheet MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 (ON Semiconductor) - 4
| 制造商 | ON Semiconductor |
| 描述 | Dual General Purpose Transistors |
| 页数 / 页 | 8 / 4 — MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1. TYPICAL TRANSIENT … |
| 修订版 | 11 |
| 文件格式/大小 | PDF / 99 Kb |
| 文件语言 | 英语 |
MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1. TYPICAL TRANSIENT CHARACTERISTICS. Figure 3. Capacitance
该数据表的模型线
文件文字版本
MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C TJ = 125°C 10 5000 VCC = 40 V 3000 7.0 IC/IB = 10 2000 5.0 1000 700 ANCE (pF) Cibo 3.0 500 ACIT Q Q, CHARGE (pC) 300 T CAP 2.0 Cobo 200 QA 100 70 1.0 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitance Figure 4. Charge Data
500 500 IC/IB = 10 V 300 300 CC = 40 V IC/IB = 10 200 200 100 100 70 tr @ VCC = 3.0 V 70 50 TIME (ns) 50 TIME (ns) 30 30 40 V 20 t , RISE r 20 15 V 10 10 7 t 2.0 V 7 d @ VOB = 0 V 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time Figure 6. Rise Time
500 500 t′s = ts - 1/8 tf V 300 300 CC = 40 V I I IB1 = IB2 I 200 C/IB = 20 C/IB = 10 200 B1 = IB2 IC/IB = 20 100 100 70 70 TIME (ns) 50 IC/IB = 20 TIME (ns) 50 ALL IC/IB = 10 I ORAGE 30 30 C/IB = 10 t , F f 20 20 t , ST′ s 10 10 7 7 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time Figure 8. Fall Time www.onsemi.com 4
TJ = 25°C TJ = 125°C 10 5000 VCC = 40 V 3000 7.0 IC/IB = 10 2000 5.0 1000 700 ANCE (pF) Cibo 3.0 500 ACIT Q Q, CHARGE (pC) 300 T CAP 2.0 Cobo 200 QA 100 70 1.0 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitance Figure 4. Charge Data
500 500 IC/IB = 10 V 300 300 CC = 40 V IC/IB = 10 200 200 100 100 70 tr @ VCC = 3.0 V 70 50 TIME (ns) 50 TIME (ns) 30 30 40 V 20 t , RISE r 20 15 V 10 10 7 t 2.0 V 7 d @ VOB = 0 V 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time Figure 6. Rise Time
500 500 t′s = ts - 1/8 tf V 300 300 CC = 40 V I I IB1 = IB2 I 200 C/IB = 20 C/IB = 10 200 B1 = IB2 IC/IB = 20 100 100 70 70 TIME (ns) 50 IC/IB = 20 TIME (ns) 50 ALL IC/IB = 10 I ORAGE 30 30 C/IB = 10 t , F f 20 20 t , ST′ s 10 10 7 7 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time Figure 8. Fall Time www.onsemi.com 4