Datasheet 2N3906, MMBT3906, PZT3906 (ON Semiconductor) - 4

2 N 3906 / MMBT3906 / PZT Typical Performance Characteristics ) V IN ( A E
250
G
0.3
G T V = 1.0V CE TA L
β
= 10 EN O
0.25
R 125 °C V R
200
R U E T
0.2
C IT M SED
150
E
0.15
L 25 °C U R 25 °C O 3906 — P T L
0.1
C A
100
E C 125°C - 40 °C L L
0.05
YPI O - 40 °C T - C
50 0
FE AT P -
0.1 0.2 0.5 1 2 5 10 20 50 100
h S
1 10 100 200
CE N I - C COLLECTOR CURRE NT (mA ) I - COLLECTOR CURRENT (mA) V C P Gen Figure 1. Typical Pulsed Current Gain vs. Collector Figure 2. Collector-Emitter Saturation Voltage vs. Current Collector Current era ) ) V ( l-Purpose V ( E
1
E
1
G G
β
= 10 - 40 °C TA TA L L O
0.8
O
0.8
V V N - 40 °C R 25 °C E 125 °C O
0.6
25 °C T
0.6
R Amplifier IT E T M IT 125 °C E
0.4 0.4
E M S E A E V = 1V B S CE -
0.2
A
0.2
B AT S - )N BE
0
V (O
0 1 10 100 200
BE
0.1 1 10 25
V I C - COLLECTOR CURRE NT (mA) I C - COLLECTOR CURRE NT (mA) Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage vs. vs. Collector Current Collector Current A)
100
n (
10
T V = 25V CB N C obo E
10
) F
8
RR p CU
6
R
1
NCE ( O T TA C CI
4
C ibo LE A L P
0.1
O CA
2
- C
0
I CBO
0.0125 50 75 100 125 0.1 1 10
REVERSE BIAS VOLTAGE (V) T - A AMBIE NT TEMP ERATURE ( C) ° Figure 5. Collector Cut-Off Current vs. Figure 6. Common-Base Open Circuit Input and Out- Ambient Temperature put Capacitance vs. Reverse Bias Voltage
www.onsemi.com 4