Datasheet 2N3906 (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | Small Signal PNP Bipolar Transistor, TO-92 |
| 页数 / 页 | 7 / 2 — 2N3906. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. … |
| 修订版 | 4 |
| 文件格式/大小 | PDF / 178 Kb |
| 文件语言 | 英语 |
2N3906. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
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2N3906 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 40 − Vdc Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − Vdc Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL − 50 nAdc Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX − 50 nAdc
ON CHARACTERISTICS
(Note 2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) hFE 60 − − (IC = 1.0 mAdc, VCE = 1.0 Vdc) 80 − (IC = 10 mAdc, VCE = 1.0 Vdc) 100 300 (IC = 50 mAdc, VCE = 1.0 Vdc) 60 − (IC = 100 mAdc, VCE = 1.0 Vdc) 30 − Collector−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) − 0.25 Vdc (IC = 50 mAdc, IB = 5.0 mAdc − 0.4 Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) 0.65 0.85 Vdc (IC = 50 mAdc, IB = 5.0 mAdc) − 0.95
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 250 − MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.5 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 10 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 2.0 12 kW Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 10 X 10−4 Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 100 400 − Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 3.0 60 mmhos Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) NF − 4.0 dB
SWITCHING CHARACTERISTICS
Delay Time (V t CC = 3.0 Vdc, VBE = 0.5 Vdc, d − 35 ns I Rise Time C = 10 mAdc, IB1 = 1.0 mAdc) tr − 35 ns Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) ts − 225 ns Fall Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) tf − 75 ns 2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%.
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2N3906 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 40 − Vdc Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − Vdc Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL − 50 nAdc Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX − 50 nAdc
ON CHARACTERISTICS
(Note 2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) hFE 60 − − (IC = 1.0 mAdc, VCE = 1.0 Vdc) 80 − (IC = 10 mAdc, VCE = 1.0 Vdc) 100 300 (IC = 50 mAdc, VCE = 1.0 Vdc) 60 − (IC = 100 mAdc, VCE = 1.0 Vdc) 30 − Collector−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) − 0.25 Vdc (IC = 50 mAdc, IB = 5.0 mAdc − 0.4 Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) 0.65 0.85 Vdc (IC = 50 mAdc, IB = 5.0 mAdc) − 0.95
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 250 − MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.5 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 10 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 2.0 12 kW Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 10 X 10−4 Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 100 400 − Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 3.0 60 mmhos Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) NF − 4.0 dB
SWITCHING CHARACTERISTICS
Delay Time (V t CC = 3.0 Vdc, VBE = 0.5 Vdc, d − 35 ns I Rise Time C = 10 mAdc, IB1 = 1.0 mAdc) tr − 35 ns Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) ts − 225 ns Fall Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) tf − 75 ns 2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%.
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