Datasheet MPSA63, MMBTA63, PZTA63 (ON Semiconductor) - 4

2 V BE( ON)-BASE EMITTER ON VOLTAGE (V) VBESAT -BASE EMITTE R VOLTAGE (V) Base-Emitter Saturation
Voltage vs Collector Current
β = 1000
β
-40 °C 1.6
1.2 25 °C
125 °C 0.8
0.4
0
0.001 0.01
0.1
I C -COLLECTOR CURRENT (A) 1 Base Emitter ON Voltage vs
Collector Current
2
-40 °C 1.6
1.2 25 °C
125 °C 0.8
V CE = 5V 0.4
0
0.001 Figure 3. Base-Emitter Saturation Voltage
vs Collector Current 1 Figure 4. Base-Emitter On Voltage
vs Collector Current Collector-Cutoff Current
vs Ambient Temperature Input and Output Capacitance
vs Reverse Bias Voltage 100 16
f = 1.0 MHz V CB = 15V
CAPACITANCE (pF) I CBO -COLLE CTOR CURRENT (nA) 0.01
0.1
I C -COLLECTOR CURRENT (A) 10 1 0.1 12 8
C ib
4
C ob 0.01
25 50
75
100
T A -AMBIE NT TEMP ERATURE ( ° C) 0
0.1 125 1
10
REVERSE VOLTAGE (V) 100 Figure 6. Input and Output Capacitance
vs Reverse Bias Voltage Figure 5. Collector Cutoff Current
vs Ambient Temperature Power Dissipation vs
Ambient Temperature
P D -POWER DISSIPATION (W) 1 SOT-223 0.75 TO-92 0.5
SOT-23 0.25 0 0 25 50
75
100
TEMPERATURE ( o C) 125 150 Figure 7. Power Dissipation
vs Ambient Temperature © 2010 Fairchild Semiconductor Corporation
MPSA63 / MMBTA63 / PZTA63 Rev. A1 www.fairchildsemi.com
3 MPSA63 / MMBTA63 / PZTA63 — PNP Darlington Transistor Typical Performance Characteristics (continued)