Datasheet DGTD65T15H2TF (Diodes) - 2
| 制造商 | Diodes |
| 描述 | 650V Field Stop IGBT |
| 页数 / 页 | 9 / 2 — DGTD65T15H2TF. Absolute Maximum Ratings. Characteristic. Symbol. Value. … |
| 文件格式/大小 | PDF / 1.8 Mb |
| 文件语言 | 英语 |
DGTD65T15H2TF. Absolute Maximum Ratings. Characteristic. Symbol. Value. Unit. Thermal Characteristics. www.diodes.com
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DGTD65T15H2TF Absolute Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Emitter Voltage VCE 650 V TC = +25°C 30 A DC Collector Current, Limited by Tjmax IC TC = +100°C 15 A Pulsed Collector Current, tp Limited by Tjmax ICpuls 60 A TC = +25°C 30 A Diode Forward Current Limited by Tjmax IF TC = +100°C 15 A Diode Pulsed Current, tp Limited by Tjmax IFpuls 60 A Gate-Emitter Voltage VGE ±20 V Short Circuit Withstand Time t V SC 5 µs CC ≤ 360V, VGE = 15V, Tj = +150°C
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
48 Power Dissipation Linear Derating Factor (Note 7) TC = +25°C PD W TC = +100°C 24 Thermal Resistance, Junction to Ambient (Note 6) RϴJA 62 Thermal Resistance, Junction to Case for IBGT (Note 7) R °C/W ϴJC 3.0 Thermal Resistance, Junction to Case for Diode (Note 7) RϴJC 5.0 Operating Temperature Tj -40 to +175 °C Storage Temperature Range TSTG -55 to +150 Note: 6. For a device mounted in a socket in still air conditions. Collector lead length 10mm. 7. For a device mounted on a Force Cooled Aluminium Heatsink 80x80x60mm. DGTD65T15H2TF 2 of 9 June 2018 Document Number DS39649 Rev. 4 - 2
www.diodes.com
© Diodes Incorporated Document Outline Features Description Mechanical Data Characteristic Symbol Value Unit Characteristic Applications Ordering Information (Note 4) Marking Information Typical Performance Characteristics (@TA = +25 C, unless otherwise specified.) Typical Performance Characteristics (@TA = +25 C, unless otherwise specified.) (continued) Typical Performance Characteristics (@TA = +25 C, unless otherwise specified.) (cont.) Package Outline Dimensions
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Emitter Voltage VCE 650 V TC = +25°C 30 A DC Collector Current, Limited by Tjmax IC TC = +100°C 15 A Pulsed Collector Current, tp Limited by Tjmax ICpuls 60 A TC = +25°C 30 A Diode Forward Current Limited by Tjmax IF TC = +100°C 15 A Diode Pulsed Current, tp Limited by Tjmax IFpuls 60 A Gate-Emitter Voltage VGE ±20 V Short Circuit Withstand Time t V SC 5 µs CC ≤ 360V, VGE = 15V, Tj = +150°C
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
48 Power Dissipation Linear Derating Factor (Note 7) TC = +25°C PD W TC = +100°C 24 Thermal Resistance, Junction to Ambient (Note 6) RϴJA 62 Thermal Resistance, Junction to Case for IBGT (Note 7) R °C/W ϴJC 3.0 Thermal Resistance, Junction to Case for Diode (Note 7) RϴJC 5.0 Operating Temperature Tj -40 to +175 °C Storage Temperature Range TSTG -55 to +150 Note: 6. For a device mounted in a socket in still air conditions. Collector lead length 10mm. 7. For a device mounted on a Force Cooled Aluminium Heatsink 80x80x60mm. DGTD65T15H2TF 2 of 9 June 2018 Document Number DS39649 Rev. 4 - 2
www.diodes.com
© Diodes Incorporated Document Outline Features Description Mechanical Data Characteristic Symbol Value Unit Characteristic Applications Ordering Information (Note 4) Marking Information Typical Performance Characteristics (@TA = +25 C, unless otherwise specified.) Typical Performance Characteristics (@TA = +25 C, unless otherwise specified.) (continued) Typical Performance Characteristics (@TA = +25 C, unless otherwise specified.) (cont.) Package Outline Dimensions