Datasheet DGTD65T40S2PT (Diodes) - 3

DGTD65T40S2PT Electrical Characteristics
(@TJ = +25°C, unless otherwise specified.)
Parameter Symbol Min Typ Max Unit Condition STATIC CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCES 650 — — V IC = 2mA, VGE = 0V T — 1.8 2.30 Collector-Emitter Saturation Voltage J = +25° C VCE(SAT) V IC = 40A, VGE = 15V TJ = +175°C — 2.30 — T — 1.50 1.95 Diode Forward Voltage J = +25° C VF V VGE = 0V, IF = 20A TJ= +175°C — 1.50 — Gate-Emitter Threshold Voltage VGE(TH) 3.5 5.0 6.5 V VCE = VGE, IC = 40mA Zero Gate Voltage Collector Current ICES — — 40 µA VCE = 650V, VGE = 0V Gate-Emitter Leakage Current IGES — — ±100 nA VGE = 20V, VCE = 0V
DYNAMIC CHARACTERISTICS
Total Gate Charge Qg — 60 — Gate-Emitter Charge Qge — 13 — nC VCE = 520V, IC = 40A, VGE = 15V Gate-Collector Charge Qgc — 25 — Input Capacitance Cies — 1565 — V Reverse Transfer Capacitance Cres — 37 — pF CE = 25V, VGE = 0V, f = 1MHz Output Capacitance Coes — 120 —
SWITCHING CHARACTERISTICS
Turn-on Delay Time tD(ON) — 6 — Rise Time tR — 36 — ns VGE = 15V, VCC = 400V, Turn-off Delay Time tD(OFF) — 55 — IC = 40A, RG = 10Ω, Fall Time tF — 64 — Inductive Load, Turn-on Switching Energy EON — 0.5 — TVJ = +25°C Turn-off Switching Energy EOFF — 0.4 — mJ Total Switching Energy ETS — 0.9 — Reverse Recovery Time tRR — 60 — ns IF = 20A, Reverse Recovery Current IRR — 18 — A diF/dt = 820A/µs, Reverse Recovery Charge Q T RR — 696 — nC VJ = +25° C Turn-on Delay Time tD(ON) — 7 — Rise Time tR — 41 — ns VGE = 15V, VCC = 400V, Turn-off Delay Time tD(OFF) — 60 — IC = 40A, RG = 10Ω , Fall Time tF — 102 — Inductive Load, Turn-on Switching Energy EON — 1.04 — TVJ = +175°C Turn-off Switching Energy EOFF — 0.57 — mJ Total Switching Energy ETS — 1.61 — Reverse Recovery Time tRR — 72 — ns IF = 20A, Reverse Recovery Current IRR — 22 — A diF/dt = 820A/µs, Reverse Recovery Charge Q T RR — 864 — nC VJ = +175° C DGTD65T40S2PT 3 of 9 August 2018 Document Number DS41113 Rev. 1 - 2
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