Datasheet DGTD65T50S1PT (Diodes) - 3
| 制造商 | Diodes |
| 描述 | 650V Field Stop IGBT |
| 页数 / 页 | 9 / 3 — DGTD65T50S1PT. Electrical Characteristics. Parameter. Symbol. Min. Typ. … |
| 文件格式/大小 | PDF / 1.7 Mb |
| 文件语言 | 英语 |
DGTD65T50S1PT. Electrical Characteristics. Parameter. Symbol. Min. Typ. Max. Unit. Condition. STATIC CHARACTERISTICS
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DGTD65T50S1PT Electrical Characteristics
(@Tvj = +25°C, unless otherwise specified.)
Parameter Symbol Min Typ Max Unit Condition STATIC CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCES 650 – – V IC = 2mA, VGE = 0V T – 1.85 2.40 Collector-Emitter Saturation Voltage vj = 25°C VCE(sat) V IC = 50A, VGE = 15V Tvj = 175°C – 2.20 – T – 1.65 2.05 Diode Forward Voltage vj = 25°C VF V VGE = 0V, IF = 30A Tvj = 175°C – 1.55 – Gate-Emitter Threshold Voltage VGE(th) 3.8 5.0 6.2 V VCE = VGE, IC = 0.5mA Zero Gate Voltage Collector Current ICES – – 40 µA VCE = 650V, VGE = 0V Gate-Emitter Leakage Current IGES – – ±100 nA VGE = 20V, VCE = 0V
DYNAMIC CHARACTERISTICS
Total Gate Charge Qg – 287 – Gate-Emitter Charge Qge – 42 – nC VCE = 520V, IC = 50A, VGE = 15V Gate-Collector Charge Qgc – 181 – Input Capacitance Cies – 4,453 – V Reverse Transfer Capacitance Cres – 161 – pF CE = 25V, VGE = 0V, f = 1MHz Output Capacitance Coes – 238 – Internal Emitter Inductance Measured 5mm (0.197”) L From Case E – 13 – nH – Short Circuit Collector Current Max. 1000 Short VGE = 15V, VCC = 400V, IC(SC) – 140 – A Circuits. Time Between Short Circuits ≥ 1.0s tSC ≤ 5µs, Tvj = 150°C
SWITCHING CHARACTERISTICS
Turn-on Delay Time td(on) – 58 – Rise time tr – 60 – ns VGE = 15V, VCC = 400V, Turn-off Delay Time td(off) – 328 – IC = 50A, RG = 7.9Ω, Fall Time tf – 44 – Inductive Load, Turn-on Switching Energy Eon – 0.77 – Tvj = 25°C Turn-off Switching Energy Eoff – 0.55 – mJ Total Switching Energy Ets – 1.32 – Reverse Recovery Time trr – 80 – ns IF = 30A, Reverse Recovery Current Irr – 24 – A diF/dt = 1000A/µs, Reverse Recovery Charge Q T rr – 0.95 – µC vj = 25°C Turn-on Delay Time td(on) – 51 – Rise time tr – 66 – ns VGE = 15V, VCC = 400V, Turn-off Delay Time td(off) – 350 – IC = 50A, RG = 7.9Ω, Fall Time tf – 49 – Inductive Load, Turn-on Switching Energy Eon – 1.05 – Tvj = 175°C Turn-off Switching Energy Eoff – 0.55 – mJ Total Switching Energy Ets – 1.6 – Reverse Recovery Time trr – 116 – ns IF = 30A, Reverse Recovery Current Irr – 34 – A diF/dt = 1000A/µs, Reverse Recovery Charge Q T rr – 1.97 – µC vj = 175°C DGTD65T50S1PT 3 of 9 March 2018 Document Number DS39668 Rev. 1 - 2
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© Diodes Incorporated
(@Tvj = +25°C, unless otherwise specified.)
Parameter Symbol Min Typ Max Unit Condition STATIC CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCES 650 – – V IC = 2mA, VGE = 0V T – 1.85 2.40 Collector-Emitter Saturation Voltage vj = 25°C VCE(sat) V IC = 50A, VGE = 15V Tvj = 175°C – 2.20 – T – 1.65 2.05 Diode Forward Voltage vj = 25°C VF V VGE = 0V, IF = 30A Tvj = 175°C – 1.55 – Gate-Emitter Threshold Voltage VGE(th) 3.8 5.0 6.2 V VCE = VGE, IC = 0.5mA Zero Gate Voltage Collector Current ICES – – 40 µA VCE = 650V, VGE = 0V Gate-Emitter Leakage Current IGES – – ±100 nA VGE = 20V, VCE = 0V
DYNAMIC CHARACTERISTICS
Total Gate Charge Qg – 287 – Gate-Emitter Charge Qge – 42 – nC VCE = 520V, IC = 50A, VGE = 15V Gate-Collector Charge Qgc – 181 – Input Capacitance Cies – 4,453 – V Reverse Transfer Capacitance Cres – 161 – pF CE = 25V, VGE = 0V, f = 1MHz Output Capacitance Coes – 238 – Internal Emitter Inductance Measured 5mm (0.197”) L From Case E – 13 – nH – Short Circuit Collector Current Max. 1000 Short VGE = 15V, VCC = 400V, IC(SC) – 140 – A Circuits. Time Between Short Circuits ≥ 1.0s tSC ≤ 5µs, Tvj = 150°C
SWITCHING CHARACTERISTICS
Turn-on Delay Time td(on) – 58 – Rise time tr – 60 – ns VGE = 15V, VCC = 400V, Turn-off Delay Time td(off) – 328 – IC = 50A, RG = 7.9Ω, Fall Time tf – 44 – Inductive Load, Turn-on Switching Energy Eon – 0.77 – Tvj = 25°C Turn-off Switching Energy Eoff – 0.55 – mJ Total Switching Energy Ets – 1.32 – Reverse Recovery Time trr – 80 – ns IF = 30A, Reverse Recovery Current Irr – 24 – A diF/dt = 1000A/µs, Reverse Recovery Charge Q T rr – 0.95 – µC vj = 25°C Turn-on Delay Time td(on) – 51 – Rise time tr – 66 – ns VGE = 15V, VCC = 400V, Turn-off Delay Time td(off) – 350 – IC = 50A, RG = 7.9Ω, Fall Time tf – 49 – Inductive Load, Turn-on Switching Energy Eon – 1.05 – Tvj = 175°C Turn-off Switching Energy Eoff – 0.55 – mJ Total Switching Energy Ets – 1.6 – Reverse Recovery Time trr – 116 – ns IF = 30A, Reverse Recovery Current Irr – 34 – A diF/dt = 1000A/µs, Reverse Recovery Charge Q T rr – 1.97 – µC vj = 175°C DGTD65T50S1PT 3 of 9 March 2018 Document Number DS39668 Rev. 1 - 2
www.diodes.com
© Diodes Incorporated