Datasheet Si8931/32 (Silicon Labs) - 10

link to page 10 Si8931/32 Data Sheet Electrical Specifications
Table 4.4. Absolute Maximum Ratings1 Parameter Symbol Min Max Unit
Storage Temperature TSTG –65 150 °C Ambient Temperature Under Bias TA –40 125 °C Junction Temperature TJ — 150 °C Supply Voltage VDDA, VDDB –0.5 6.0 V Input Voltage respect to GNDA VIN –0.5 VDDx + 0.5 V Output Sink or Source Current |IO| — 5 mA Total Power Dissipation PT — 212 mW Lead Solder Termperature (10 s) — 260 °C Human Body Model ESD Rating 6000 — V Capacitive Discharge Model ESD Rating 2000 — V Maximum Isolation (WB Stretched SOIC-8 Input to Output) (1 — 6500 V s) RMS Maximum Isolation (NB SOIC-8 package Input to Output) (1 — 3250 V s) RMS
Note:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be restricted to conditions as specified in the operational sections of the data sheet.
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| Building a more connected world. Preliminary Rev. 0.5 | 10 Document Outline 1. Ordering Guide 2. System Overview 3. Voltage Sense Application 4. Electrical Specifications 4.1 Regulatory Information 4.2 Typical Operating Characteristics 5. Pin Descriptions 5.1 Si8931 Pin Descriptions 5.2 Si8932 Pin Descriptions 6. Packaging 6.1 Package Outline: 8-Pin Wide Body Stretched SOIC 6.2 Package Outline: 8-Pin Narrow Body SOIC 6.3 Land Pattern: 8-Pin Wide Body Stretched SOIC 6.4 Land Pattern: 8-Pin Narrow Body SOIC 6.5 Top Marking: 8-Pin Wide Body Stretched SOIC 6.6 Top Marking: 8-Pin Narrow Body SOIC 7. Document Revision History