Datasheet STGWA40IH65DF (STMicroelectronics) - 7
| 制造商 | STMicroelectronics |
| 描述 | Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO-247 long leads package |
| 页数 / 页 | 15 / 7 — STGWA40IH65DF. Electrical characteristics (curves). Figure 13. Gate … |
| 修订版 | 3 |
| 文件格式/大小 | PDF / 351 Kb |
| 文件语言 | 英语 |
STGWA40IH65DF. Electrical characteristics (curves). Figure 13. Gate charge vs gate-emitter voltage
该数据表的模型线
文件文字版本
STGWA40IH65DF Electrical characteristics (curves) Figure 13. Gate charge vs gate-emitter voltage Figure 14. Switching energy vs collector current
V GADG080820181009QVG GE E IGBT080820181009SLC (V) (μJ) V V CC = 400 V, IC = 40 A, IG = 1 mA CC = 400 V, RG = 22 Ω, 15 2400 VGE = 15 V, TJ = 175 °C 2000 12 1600 E 9 off 1200 6 800 3 400 0 0 0 20 40 60 80 100 Qg (nC) 0 20 40 60 80 IC (A)
Figure 15. Switching energy vs temperature Figure 16. Switching energy vs collector emitter voltage
E IGBT080820181009SLT E IGBT080820181009SLV (μJ) V (μJ) CC = 400 V, RG = 22 Ω, IC = 40 A, RG = 22 Ω, VGE = 15 V, IC = 40 A VGE = 15 V, TJ = 175 °C 1200 900 1000 E 800 off Eoff 800 700 600 600 400 0 50 100 150 TJ (°C) 150 250 350 450 VCE (V)
Figure 17. Switching times vs collector current Figure 18. Switching energy vs snubber capacitance
t IGBT080820181010STC E IGBT080820181011SSC (ns) V (μJ) V CC = 400 V, RG = 22 Ω, CC = 320 V, RG = 10 Ω, V V GE = 15 V, TJ = 175 °C GE = 15 V, IC = 40 A, Lsnub = 0.1 mH 500 td(off) 400 10 2 300 TJ = 175 °C tf 200 100 TJ = 25 °C 10 1 0 0 20 40 60 80 IC (A) 0 30 60 90 Csnub (nF)
DS11801
-
Rev 3 page 7/15
Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package information 4.1 TO-247 long leads package information Revision history
V GADG080820181009QVG GE E IGBT080820181009SLC (V) (μJ) V V CC = 400 V, IC = 40 A, IG = 1 mA CC = 400 V, RG = 22 Ω, 15 2400 VGE = 15 V, TJ = 175 °C 2000 12 1600 E 9 off 1200 6 800 3 400 0 0 0 20 40 60 80 100 Qg (nC) 0 20 40 60 80 IC (A)
Figure 15. Switching energy vs temperature Figure 16. Switching energy vs collector emitter voltage
E IGBT080820181009SLT E IGBT080820181009SLV (μJ) V (μJ) CC = 400 V, RG = 22 Ω, IC = 40 A, RG = 22 Ω, VGE = 15 V, IC = 40 A VGE = 15 V, TJ = 175 °C 1200 900 1000 E 800 off Eoff 800 700 600 600 400 0 50 100 150 TJ (°C) 150 250 350 450 VCE (V)
Figure 17. Switching times vs collector current Figure 18. Switching energy vs snubber capacitance
t IGBT080820181010STC E IGBT080820181011SSC (ns) V (μJ) V CC = 400 V, RG = 22 Ω, CC = 320 V, RG = 10 Ω, V V GE = 15 V, TJ = 175 °C GE = 15 V, IC = 40 A, Lsnub = 0.1 mH 500 td(off) 400 10 2 300 TJ = 175 °C tf 200 100 TJ = 25 °C 10 1 0 0 20 40 60 80 IC (A) 0 30 60 90 Csnub (nF)
DS11801
-
Rev 3 page 7/15
Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package information 4.1 TO-247 long leads package information Revision history