Datasheet STGWA50IH65DF (STMicroelectronics) - 4
| 制造商 | STMicroelectronics |
| 描述 | Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 long leads package |
| 页数 / 页 | 14 / 4 — Electrical characteristics. STGWA50IH65DF. Table 4: Static … |
| 修订版 | 2 |
| 文件格式/大小 | PDF / 811 Kb |
| 文件语言 | 英语 |
Electrical characteristics. STGWA50IH65DF. Table 4: Static characteristics. Symbol. Parameter. Test conditions. Min. Typ. Max. Unit
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Electrical characteristics STGWA50IH65DF 2 Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4: Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit
Collector-emitter V(BR)CES VGE = 0 V, IC = 250 μA 650 breakdown voltage VGE = 15 V, IC = 50 A 1.50 2.00 Collector-emitter VCE(sat) VGE = 15 V, IC = 50 A, TJ = 125 °C 1.75 saturation voltage VGE = 15 V, IC = 50 A, TJ = 175 °C 1.90 V IF = 25 A 1.75 2.50 IF = 25 A, TJ = 125 °C 1.50 VF Forward on-voltage IF = 25 A, TJ = 175 °C 1.40 IF = 50 A 2.15 VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 Collector cut-off ICES V 25 µA current GE = 0 V, VCE = 650 V Gate-emitter leakage IGES V ±250 nA current CE = 0 V, VGE = ±20 V
Table 5: Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit
Cies Input capacitance - 2980 - Coes Output capacitance - 150 - VCE= 25 V, f = 1 MHz, VGE = 0 V pF Reverse transfer Cres - 81 - capacitance Qg Total gate charge VCC = 520 V, IC = 50 A, - 158 - VGE = 0 to 15 V Qge Gate-emitter charge - 25 - nC (see Figure 24: "Gate charge test Qgc Gate-collector charge circuit") - 72 -
Table 6: IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit
td(off) Turn-off-delay time VCC = 400 V, IC = 50 A, - 260 - VGE = 15 V, RG = 22 Ω ns t (see Figure 22: "Test circuit for f Current fall time - 17 - inductive load switching") td(off) Turn-off-delay time VCC = 400 V, IC = 50 A, - 270 - VGE = 15 V, RG = 22 Ω TJ = 175 °C ns t (see Figure 22: "Test circuit for f Current fall time - 24 - inductive load switching") 4/14 DocID029659 Rev 2
Electrical characteristics STGWA50IH65DF 2 Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4: Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit
Collector-emitter V(BR)CES VGE = 0 V, IC = 250 μA 650 breakdown voltage VGE = 15 V, IC = 50 A 1.50 2.00 Collector-emitter VCE(sat) VGE = 15 V, IC = 50 A, TJ = 125 °C 1.75 saturation voltage VGE = 15 V, IC = 50 A, TJ = 175 °C 1.90 V IF = 25 A 1.75 2.50 IF = 25 A, TJ = 125 °C 1.50 VF Forward on-voltage IF = 25 A, TJ = 175 °C 1.40 IF = 50 A 2.15 VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 Collector cut-off ICES V 25 µA current GE = 0 V, VCE = 650 V Gate-emitter leakage IGES V ±250 nA current CE = 0 V, VGE = ±20 V
Table 5: Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit
Cies Input capacitance - 2980 - Coes Output capacitance - 150 - VCE= 25 V, f = 1 MHz, VGE = 0 V pF Reverse transfer Cres - 81 - capacitance Qg Total gate charge VCC = 520 V, IC = 50 A, - 158 - VGE = 0 to 15 V Qge Gate-emitter charge - 25 - nC (see Figure 24: "Gate charge test Qgc Gate-collector charge circuit") - 72 -
Table 6: IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit
td(off) Turn-off-delay time VCC = 400 V, IC = 50 A, - 260 - VGE = 15 V, RG = 22 Ω ns t (see Figure 22: "Test circuit for f Current fall time - 17 - inductive load switching") td(off) Turn-off-delay time VCC = 400 V, IC = 50 A, - 270 - VGE = 15 V, RG = 22 Ω TJ = 175 °C ns t (see Figure 22: "Test circuit for f Current fall time - 24 - inductive load switching") 4/14 DocID029659 Rev 2