Datasheet MBRF20100CT (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | Schottky Power Rectifier, Switch-mode, 20 A, 100 V |
| 页数 / 页 | 4 / 2 — MBRF20100CTG. MAXIMUM RATINGS. Rating. Symbol. Value. Unit. THERMAL … |
| 修订版 | 10 |
| 文件格式/大小 | PDF / 57 Kb |
| 文件语言 | 英语 |
MBRF20100CTG. MAXIMUM RATINGS. Rating. Symbol. Value. Unit. THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS. Characteristic. Max
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MBRF20100CTG MAXIMUM RATINGS
(Per Leg)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 100 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IF(AV) 10 A (Rated VR), TC = 133°C Total Device 20 Peak Repetitive Forward Current IFRM 20 A (Rated VR, Square Wave, 20 kHz), TC = 133°C Non−repetitive Peak Surge Current IFSM 150 A (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 0.5 A Operating Junction and Storage Temperature Range (Note 1) TJ, Tstg − 65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10000 V/ms RMS Isolation Voltage (t = 0.3 second, R.H. ≤ 30%, TA = 25°C) (Note 2) Viso1 4500 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
(Per Leg)
Rating Symbol Value Unit
Maximum Thermal Resistance, Junction to Case RqJC 3.5 °C/W Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds TL 260 °C
ELECTRICAL CHARACTERISTICS
(Per Leg)
Characteristic Symbol Max Unit
Maximum Instantaneous Forward Voltage (Note 3) vF V (iF = 10 Amp, TC = 25°C) 0.85 (iF = 10 Amp, TC = 125°C) 0.75 (iF = 20 Amp, TC = 25°C) 0.95 (iF = 20 Amp, TC = 125°C) 0.85 Maximum Instantaneous Reverse Current (Note 3) iR mA (Rated DC Voltage, TC = 25°C) 0.15 (Rated DC Voltage, TC = 125°C) 150 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Proper strike and creepage distance must be provided. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 50 T (AMPS) J = 150°C 150°C 20 10 T (mA) J = 125°C 10 TJ = 100°C 100°C ARD CURRENT 1.0 W 5.0 TJ = 25°C 3.0 0.1 , REVERSE CURRENT ANEOUS FOR I R 1.0 ANT 0.01 TJ = 25°C 0.5 , INST i F 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20 40 60 80 100 120 vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Per Diode Figure 2. Typical Reverse Current Per Diode www.onsemi.com 2
MBRF20100CTG MAXIMUM RATINGS
(Per Leg)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 100 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IF(AV) 10 A (Rated VR), TC = 133°C Total Device 20 Peak Repetitive Forward Current IFRM 20 A (Rated VR, Square Wave, 20 kHz), TC = 133°C Non−repetitive Peak Surge Current IFSM 150 A (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 0.5 A Operating Junction and Storage Temperature Range (Note 1) TJ, Tstg − 65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10000 V/ms RMS Isolation Voltage (t = 0.3 second, R.H. ≤ 30%, TA = 25°C) (Note 2) Viso1 4500 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
(Per Leg)
Rating Symbol Value Unit
Maximum Thermal Resistance, Junction to Case RqJC 3.5 °C/W Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds TL 260 °C
ELECTRICAL CHARACTERISTICS
(Per Leg)
Characteristic Symbol Max Unit
Maximum Instantaneous Forward Voltage (Note 3) vF V (iF = 10 Amp, TC = 25°C) 0.85 (iF = 10 Amp, TC = 125°C) 0.75 (iF = 20 Amp, TC = 25°C) 0.95 (iF = 20 Amp, TC = 125°C) 0.85 Maximum Instantaneous Reverse Current (Note 3) iR mA (Rated DC Voltage, TC = 25°C) 0.15 (Rated DC Voltage, TC = 125°C) 150 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Proper strike and creepage distance must be provided. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 50 T (AMPS) J = 150°C 150°C 20 10 T (mA) J = 125°C 10 TJ = 100°C 100°C ARD CURRENT 1.0 W 5.0 TJ = 25°C 3.0 0.1 , REVERSE CURRENT ANEOUS FOR I R 1.0 ANT 0.01 TJ = 25°C 0.5 , INST i F 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20 40 60 80 100 120 vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Per Diode Figure 2. Typical Reverse Current Per Diode www.onsemi.com 2