Datasheet MMBT3906 (Diodes) - 4

MMBT3906 Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO -40  V IC = -100μA, IE = 0 Collector-Emitter Breakdown Voltage (Note 10) BVCEO -40  V IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO -6.0  V IE = -100μA, IC = 0  -50 nA V Collector Cutoff Current CE = -30V, VBE = 3.0V ICEV  -50 nA VCE = -30V, VBE = -0.25V Emitter-Base Cutoff Current IEBO  -50 nA VEB = -5V
ON CHARACTERISTICS
(Note 10) 60  IC = -100µA, VCE = -1.0V 80  I C = -1.0mA, VCE = -1.0V DC Current Gain hFE 100 300  I C = -10mA, VCE = -1.0V 60  IC = -50mA, VCE = -1.0V 30  IC = -100mA, VCE = -1.0V -0.25 I Collector-Emitter Saturation Voltage V C = -10mA, IB = -1.0mA CE(sat)  V -0.40 IC = -50mA, IB = -5.0mA -0.65 -0.85 I Base-Emitter Saturation Voltage V C = -10mA, IB = -1.0mA BE(sat)  V -0.95 IC = -50mA, IB = -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo  4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo  10 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 2.0 12 kΩ Voltage Feedback Ratio hre 0.1 10 × 10-4 VCE = 10V, IC = 1.0mA, Small Signal Current Gain h f = 1.0kHz fe 100 400  Output Admittance hoe 3.0 60 μS V Current Gain-Bandwidth Product f CE = -20V, IC = -10mA, T 250  MHz f = 100MHz V Noise Figure NF  4.0 dB CE = -5.0V, IC = -100μA, RS = 1.0kΩ, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time td  35 ns VCC = -3.0V, IC = -10mA, Rise Time tr  35 ns VBE(off) = 0.5V, IB1 = -1.0mA Storage Time ts  225 ns VCC = -3.0V, IC = -10mA, Fall Time tf  75 ns IB1 = IB2 = -1.0mA Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. MMBT3906 4 of 7 June 2018 Document number: DS30059 Rev. 21 - 2
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