Datasheet SMBT3906...MMBT3906 (Infineon) - 2
| 制造商 | Infineon |
| 描述 | PNP Silicon Switching Transistors |
| 页数 / 页 | 12 / 2 — SMBT3906...MMBT3906. Thermal Resistance Parameter. Symbol. Value. Unit. … |
| 修订版 | 01_01 |
| 文件格式/大小 | PDF / 908 Kb |
| 文件语言 | 英语 |
SMBT3906...MMBT3906. Thermal Resistance Parameter. Symbol. Value. Unit. Electrical Characteristics. Parameter. Values. min. typ. max
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文件文字版本
SMBT3906...MMBT3906 Thermal Resistance Parameter Symbol Value Unit
Junction - soldering point1) RthJS mW SMBT3906/ MMBT3906 ≤ 240 SMBT3906S ≤ 140 SMBT3906U ≤ 130 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Electrical Characteristics
at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit min. typ. max. DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO 40 - - V IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 40 - - IC = 10 µA, IE = 0 Emitter-base breakdown voltage V(BR)EBO 6 - - IE = 10 µA, IC = 0 Collector-base cutoff current ICBO - - 50 nA VCB = 30 V, IE = 0 DC current gain1) hFE - IC = 100 µA, VCE = 1 V 60 - - IC = 1 mA, VCE = 1 V 80 - - IC = 10 mA, VCE = 1 V 100 - 300 IC = 50 mA, VCE = 1 V 60 - - IC = 100 mA, VCE = 1 V 30 - - Collector-emitter saturation voltage1) VCEsat V IC = 10 mA, IB = 1 mA - - 0.25 IC = 50 mA, IB = 5 mA - - 0.4 Base emitter saturation voltage1) VBEsat IC = 10 mA, IB = 1 mA 0.65 - 0.85 IC = 50 mA, IB = 5 mA - - 0.95 1Pulse test: t < 300µs; D < 2% 2 2012-08-21
Junction - soldering point1) RthJS mW SMBT3906/ MMBT3906 ≤ 240 SMBT3906S ≤ 140 SMBT3906U ≤ 130 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Electrical Characteristics
at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit min. typ. max. DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO 40 - - V IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 40 - - IC = 10 µA, IE = 0 Emitter-base breakdown voltage V(BR)EBO 6 - - IE = 10 µA, IC = 0 Collector-base cutoff current ICBO - - 50 nA VCB = 30 V, IE = 0 DC current gain1) hFE - IC = 100 µA, VCE = 1 V 60 - - IC = 1 mA, VCE = 1 V 80 - - IC = 10 mA, VCE = 1 V 100 - 300 IC = 50 mA, VCE = 1 V 60 - - IC = 100 mA, VCE = 1 V 30 - - Collector-emitter saturation voltage1) VCEsat V IC = 10 mA, IB = 1 mA - - 0.25 IC = 50 mA, IB = 5 mA - - 0.4 Base emitter saturation voltage1) VBEsat IC = 10 mA, IB = 1 mA 0.65 - 0.85 IC = 50 mA, IB = 5 mA - - 0.95 1Pulse test: t < 300µs; D < 2% 2 2012-08-21